SPB21N10 ,N-Channel SIPMOS Power TransistorFeatureV 100 VDS• N-ChannelR 85 mΩDS(on)• Enhancement modeI 21 AD•=175°C operating temperatureP-TO2 ..
SPB21N50C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 0.19 ΩDS(on)• New revolutionary high voltage technologyI 21 AD• Worldwide best R in TO 220 ..
SPB30N03 ,N-Channel SIPMOS Power TransistorCharacteristicsDrain- source breakdown voltage 30 - - VV(BR)DSSV = 0 V, I = 0.25 mAGS D2.1 3 4Gate ..
SPB30N03L ,N-Channel SIPMOS Power TransistorFeaturesDrain source voltage 30 VVDS• N channelDrain-Source on-state resistance 0.018R Ω• Enhanceme ..
SPB35N10 ,Low Voltage MOSFETsFeatureV100 VDS
SPB21N10
N-Channel SIPMOS Power Transistor
SPI21N10
SPP21N10,SPB21N10Target data sheet
SIPMOS
=Power-Transistor
Product Summary
Feature• N-Channel
• Enhancement mode
•=175°C operating temperature
• Avalanche rated
• dv/dt rated
P-TO263-3-2P-TO220-3-1P-TO262-3-1
SPI21N10
SPP21N10,SPB21N10Target data sheet
Thermal Characteristics
Characteristics
Static Characteristics
SPI21N10
SPP21N10,SPB21N10Target data sheet
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
SPI21N10
SPP21N10,SPB21N10Target data sheet
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© Infineon Technologies AG 1999
All Rights Reserved.
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For information on the types in question please contact your nearest Infineon Technologies Office.
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