SPB18P06P ,SIPMOS® Parametric SearchFeaturesProduct Summary• P-Channel Drain source voltage V -60 VDS• Enhancement modeDrain-source on- ..
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SPB18P06P
SIPMOS® Parametric Search
SPP18P06P
SPB18P06P
SIPMOS Power-Transistor
Features P-Channel Enhancement mode Avalanche rated dv/dt rated175°C operating temperature
Product Summary
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
SPP18P06P
SPB18P06P
Thermal Characteristics
Characteristics
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Static Characteristics
SPP18P06P
SPB18P06P
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Dynamic Characteristics
SPP18P06P
SPB18P06P
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Dynamic Characteristics
Reverse Diode
SPP18P06P
SPB18P06P
Drain currentD = f (TC)
parameter: V‡ 10 V
-2
-4
-6
-8
-10
-12
-14
-16
-20
Power dissipationtot = f (TC)
10
20
30
40
50
60
70
90
tot
Transient thermal impedancethJC = f (tp)
parameter : D = tp/T
-4 10
-3 10
-2 10
-1 10 10 10
thJC
Safe operating areaD = f ( VDS )
parameter : D = 0 , TC = 25 °C-10 -10 -10
SPP18P06P
SPB18P06P
Typ. drain-source-on-resistanceDS(on) = f (ID)
parameter: V
0.00
0.04
0.08
0.12
0.16
0.20
0.24
0.28
0.32
0.36
DS(on)
Typ. output characteristicD = f (VDS); Tj=25°C
parameter: t= 80 μs
-5
-10
-15
-20
-25
-30
-35
-40
-50
Typ. transfer characteristics ID= f ( VGS )DS‡ 2 x ID x RDS(on)max
parameter: tp = 80 μs
-5
-10
-15
-20
-25
-30
-40
Typ. forward transconductancefs = f(ID); Tj=25°C
parameter: gfs
10
