IC Phoenix
 
Home ›  SS88 > SPB11N60S5-SPI11N60S5-SPP11N60S5 ,for lowest Conduction Losses
SPB11N60S5-SPI11N60S5-SPP11N60S5 Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
SPI11N60S5INFINEONN/a200avaifor lowest Conduction Losses
SPB11N60S5InfineonN/a4800avaifor lowest Conduction Losses
SPP11N60S5 |SPP11N60S5infineon N/a6800avaifor lowest Conduction Losses


SPP11N60S5 ,for lowest Conduction LossesCharacteristics, at Tj=25°C unless otherwise specifiedParameter Symbol Conditions Values Unitmin. t ..
SPP11N65C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 0.38 ΩDS(on)• New revolutionary high voltage technologyI 11 AD• Ultra low gate chargeP-TO2 ..
SPP11N80C3 ,for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...FeatureR 0.45 ΩDS(on)• New revolutionary high voltage technologyI 11 AD• Ultra low gate chargeP-TO2 ..
SPP12N50C3 ,for lowest Conduction Losses & fastest SwitchingCharacteristicsTransconductance g V ≥2*I *R , - 8 - Sfs DS D DS(on)maxI =7ADInput capacitance C V = ..
SPP1305S32RG , P-Channel Enhancement Mode MOSFET
SPP1433S32RG , P-Channel Enhancement Mode MOSFET
ST1394-01SC6 ,IEEE1394 ONE PORT CABLE TERMINATION NETWORK WITH ESD PROTECTION DIODES
ST1534A , 500mA SMART LDO
ST1534A , 500mA SMART LDO
ST1534AP2T ,500MA SMART LDOAPPLICATIONSgenerated from 5V supply. When the 5V V isAUX■ NETWORK INTERFACE CARDSavailable, theIC ..
ST16C1450CJ28 , 2.97V TO 5.5V UART
ST16C1450CJ28 , 2.97V TO 5.5V UART


SPB11N60S5-SPI11N60S5-SPP11N60S5
for lowest Conduction Losses
SPP11N60S5, SPB11N60S5
SPI11N60S5
Cool MOS™ Power Transistor
Feature

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
Maximum Ratings
SPP11N60S5, SPB11N60S5
SPI11N60S5
Maximum Ratings
Thermal Characteristics
Electrical Characteristics, at Tj=25°C unless otherwise specified
SPP11N60S5, SPB11N60S5
SPI11N60S5
Gate Charge Characteristics
Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
SPP11N60S5, SPB11N60S5
SPI11N60S5
Electrical Characteristics, at T
j = 25 °C, unless otherwise specified
Typical Transient Thermal Characteristics
SPP11N60S5, SPB11N60S5
SPI11N60S5
1 Power dissipation
tot = f (TC)
10
20
30
40
50
60
70
80
90
100
110
120
SPP11N60S5
tot
2 Safe operating area
D = f ( VDS )
parameter : D = 0 , TC=25°C
10 3
-2 10
-1 10 10 10 10
3 Transient thermal impedance
thJC = f (tp)
parameter: D = tp/T
-4 10
-3 10
-2 10
-1 10 10 10
thJC
4 Typ. output characteristic
D = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
10
15
20
25
35
SPP11N60S5, SPB11N60S5
SPI11N60S5
5 Typ. output characteristic
D = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
10
12
14
18
6 Typ. drain-source on resistance
DS(on)=f(ID)
parameter: Tj=150°C, VGS
0.5
DS(on)
7 Drain-source on-state resistance
DS(on) = f (Tj)
parameter : ID = 7 A, VGS = 10 V
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8 SPP11N60S5
DS(on)
8 Typ. transfer characteristics
D= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
12
16
20
24
32
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED