IC Phoenix
 
Home ›  SS88 > SPA08N80C3-SPP08N80C3,for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
SPA08N80C3-SPP08N80C3 Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
SPA08N80C3infineon N/a1000avaifor lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
SPP08N80C3Infineon N/a1000avaifor lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...


SPP08N80C3 ,for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...Characteristics, at T =25°C unless otherwise specifiedjParameter Symbol Conditions Values Unitmin. ..
SPP08P06P ,P-Channel SIPMOS Power TransistorFeaturesProduct Summary• P-Channel Drain source voltage V -60 VDS• Enhancement modeDrain-source on- ..
SPP100N03S2-03 ,Low Voltage MOSFETsCharacteristicsDrain-source breakdown voltage V 30 - - V(BR)DSSV =0V, I =1mAGS D2.1 3 4Gate thresho ..
SPP100N08S2L-07 ,Low Voltage MOSFETsCharacteristicsDrain-source breakdown voltage V 75 - - V(BR)DSSV =0V, I =1mAGS D1.2 1.6 2Gate thres ..
SPP10N10 ,N-Channel SIPMOS Power TransistorFeatureV100 VDS

SPA08N80C3-SPP08N80C3
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
SPP08N80C3
SPA08N80C3Final data
Cool MOS™ Power Transistor
Feature

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
P-TO220-3-31P-TO220-3-1
Maximum Ratings
SPP08N80C3
SPA08N80C3Final data
Maximum Ratings
Thermal Characteristics
SPP08N80C3
SPA08N80C3Final data
Electrical Characteristics
Gate Charge Characteristics
Limited only by maximum temperature Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.Soldering temperature for TO-263: 220°C, reflowCo(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
SPP08N80C3
SPA08N80C3Final data
Electrical Characteristics
Typical Transient Thermal Characteristics
SPP08N80C3
SPA08N80C3Final data
1 Power dissipation
tot = f (TC)
10
20
30
40
50
60
70
80
90
100
120 SPP08N80C3
tot
2 Power dissipation FullPAK
tot = f (TC)
10
15
20
25
30
35
45
tot
3 Safe operating area
D = f ( VDS )
parameter : D = 0 , TC=25°C
-2 10
-1 10 10 10 10
4 Safe operating area FullPAK
D = f (VDS)
parameter: D = 0, TC = 25°C
-2 10
-1 10 10 10 10
SPP08N80C3
SPA08N80C3Final data
5 Transient thermal impedance
thJC = f (tp)
parameter: D = tp/T
10 -1
-4 10
-3 10
-2 10
-1 10 10 10
thJ
6 Transient thermal impedance FullPAK
thJC = f (tp)
parameter: D = tp/t
10 1
-4 10
-3 10
-2 10
-1 10 10 10
thJ
7 Typ. output characteristic
D = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
10
12
14
16
18
20
22
8 Typ. output characteristic
D = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
10
11
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED