SPA07N65C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 0.6 ΩDS(on)• New revolutionary high voltage technologyI 7.3 AD• Ultra low gate chargeP-TO2 ..
SPA08N50C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 0.6 ΩDS(on)• New revolutionary high voltage technologyI 7.6 AD• Ultra low gate chargeP-TO2 ..
SPA08N80C3 ,for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...FeatureR 0.65 ΩDS(on)• New revolutionary high voltage technologyI 8 AD• Ultra low gate chargeP-TO22 ..
SPA-1118Z , 850 MHz 1 Watt Power Amplifier with Active Bias
SPA-1118Z , 850 MHz 1 Watt Power Amplifier with Active Bias
SPA11N60C3 ,for lowest Conduction Losses & fastest SwitchingSPP11N60C3, SPB11N60C3SPI11N60C3, SPA11N60C3Cool MOS™ Power TransistorV @ T 650 VDS jmax
SST39LF016-55-4C-EI , 8 Mbit / 16 Mbit (x8) Multi-Purpose Flash
SST39LF020 , 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39LF020-45-4C-MM , 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39LF020-55-4C-WH , 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39LF020-55-4C-WHE , 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39LF040-45-4C-NHE , 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SPA07N65C3-SPP07N65C3
for lowest Conduction Losses & fastest Switching
SPP07N65C3, SPI07N65C3
SPA07N65C3
Cool MOS™ Power Transistor
Feature• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
P-TO220-3-31P-TO220-3-1P-TO262-3-1
Maximum Ratings
SPP07N65C3, SPI07N65C3
SPA07N65C3
Maximum Ratings
Thermal Characteristics
Electrical Characteristics, at T=25°C unless otherwise specified
SPP07N65C3, SPI07N65C3
SPA07N65C3
Characteristics
Gate Charge CharacteristicsLimited only by maximum temperatureRepetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
SPP07N65C3, SPI07N65C3
SPA07N65C3
Electrical Characteristics
Typical Transient Thermal Characteristics
SPP07N65C3, SPI07N65C3
SPA07N65C3
1 Power dissipationtot = f (TC)
10
20
30
40
50
60
70
80
100 SPP07N65C3
tot
2 Power dissipation FullPAKtot = f (TC)
12
16
20
24
28
34
tot
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC=25°C
-2 10
-1 10 10 10 10
4 Safe operating area FullPAKD = f (VDS)
parameter: D = 0, TC = 25°C
-2 10
-1 10 10 10 10
SPP07N65C3, SPI07N65C3
SPA07N65C3
5 Transient thermal impedancethJC = f (tp)
parameter: D = tp/T
10 -1
-3 10
-2 10
-1 10 10 10
thJC
6 Transient thermal impedance FullPAKthJC = f (tp)
parameter: D = tp/t
10 1
-3 10
-2 10
-1 10 10 10
thJC
7 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
12
16
24
8 Typ. output characteristicD = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
10
11
SPP07N65C3, SPI07N65C3
SPA07N65C3
9 Typ. drain-source on resistanceDS(on)=f(ID)
parameter: Tj=150°C, VGS
10
(on)
10 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 4.6 A, VGS = 10 V
0.4
0.8
1.2
1.6
2.4
2.8
3.4 SPP07N65C3
DS(on)
11 Typ. transfer characteristics D= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
10
12
14
16
18
20
12 Typ. gate chargeGS = f (QGate)
parameter: ID = 7.3 A pulsed
10
12
16 SPP07N65C3
