SPA04N50C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 0.95 ΩDS(on)• New revolutionary high voltage technologyI 4.5 AD• Ultra low gate chargeP-TO ..
SPA04N60C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 0.95 ΩDS(on)• New revolutionary high voltage technologyI 4.5 AD• Ultra low gate chargeP-TO ..
SPA04N80C3 ,for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...Characteristics, at T =25°C unless otherwise specifiedjParameter Symbol Conditions Values Unitmin. ..
SPA-0501-25 , SURFACE MOUNT 2-WAY SPLITTER
SPA-0501-25 , SURFACE MOUNT 2-WAY SPLITTER
SPA-0501-25 , SURFACE MOUNT 2-WAY SPLITTER
SST3906 , PNP General Purpose Transistor
SST3906 , PNP General Purpose Transistor
SST39LF016-55-4C-EI , 8 Mbit / 16 Mbit (x8) Multi-Purpose Flash
SST39LF020 , 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39LF020-45-4C-MM , 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39LF020-55-4C-WH , 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SPA04N50C3 -SPB04N50C3
for lowest Conduction Losses & fastest Switching
SPP04N50C3, SPB04N50C3
SPA04N50C3Final data
Cool MOS Power Transistor
Feature• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Maximum Ratings
SPP04N50C3, SPB04N50C3
SPA04N50C3Final data
Maximum Ratings
Thermal Characteristics
SPP04N50C3, SPB04N50C3
SPA04N50C3Final data
Electrical Characteristics
Gate Charge CharacteristicsLimited only by maximum temperature Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.Soldering temperature for TO-263: 220°C, reflowCo(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
SPP04N50C3, SPB04N50C3
SPA04N50C3Final data
Electrical Characteristics
Typical Transient Thermal Characteristics
SPP04N50C3, SPB04N50C3
SPA04N50C3Final data
1 Power dissipationtot = f (TC)
10
15
20
25
30
35
40
45
55
SPP04N50C3
tot
2 Power dissipation FullPAKtot = f (TC)
10
15
20
25
35
tot
3 Safe operating areaD = f ( VDS )
parameter : D = 0 , TC=25°C
-2 10
-1 10 10 10 10
4 Safe operating area FullPAKD = f (VDS)
parameter: D = 0, TC = 25°C
-2 10
-1 10 10 10 10
SPP04N50C3, SPB04N50C3
SPA04N50C3Final data
5 Transient thermal impedancethJC = f (tp)
parameter: D = tp/T
10 -1
-3 10
-2 10
-1 10 10 10
thJC
6 Transient thermal impedance FullPAKthJC = f (tp)
parameter: D = tp/t
10 1
-3 10
-2 10
-1 10 10 10
thJC
7 Typ. output characteristicD = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
10
12
16
8 Typ. output characteristicD = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
SPP04N50C3, SPB04N50C3
SPA04N50C3Final data
9 Typ. drain-source on resistanceDS(on)=f(ID)
parameter: Tj=150°C, VGS
10
(on)
10 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 2.8 A, VGS = 10 V
0.5
1.5
2.5
3.5
4.5
5.5
SPP04N50C3
DS(on)
11 Typ. transfer characteristics D= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
10
12
16
12 Typ. gate chargeGS = f (QGate)
parameter: ID = 4.5 A pulsed
10
12
16 SPP04N50C3
