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SPA02N80C3 |SPA02N80C3Infineon N/a450avaifor lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...


SPA02N80C3 ,for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...FeatureR 2.7 ΩDS(on)• New revolutionary high voltage technologyI 2 AD• Ultra low gate chargeP-TO220 ..
SPA03N60C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 1.4 ΩDS(on)• New revolutionary high voltage technologyI 3.2 AD• Ultra low gate chargeP-TO2 ..
SPA04N50C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 0.95 ΩDS(on)• New revolutionary high voltage technologyI 4.5 AD• Ultra low gate chargeP-TO ..
SPA04N60C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 0.95 ΩDS(on)• New revolutionary high voltage technologyI 4.5 AD• Ultra low gate chargeP-TO ..
SPA04N80C3 ,for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...Characteristics, at T =25°C unless otherwise specifiedjParameter Symbol Conditions Values Unitmin. ..
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SPA02N80C3
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
SPP02N80C3
SPA02N80C3Final data
Cool MOS™ Power Transistor
Feature

• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
P-TO220-3-31P-TO220-3-1
Maximum Ratings
SPP02N80C3
SPA02N80C3Final data
Maximum Ratings
Thermal Characteristics
SPP02N80C3
SPA02N80C3Final data
Electrical Characteristics
Gate Charge Characteristics
Limited only by maximum temperature Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
SPP02N80C3
SPA02N80C3Final data
Electrical Characteristics
Typical Transient Thermal Characteristics
SPP02N80C3
SPA02N80C3Final data
1 Power dissipation
tot = f (TC)
10
15
20
25
30
35
40
50 SPP02N80C3
tot
2 Power dissipation FullPAK
tot = f (TC)
10
15
20
25
35
tot
3 Safe operating area
D = f ( VDS )
parameter : D = 0 , TC=25°C
-2 10
-1 10 10 10
4 Safe operating area FullPAK
D = f (VDS)
parameter: D = 0, TC = 25°C
-2 10
-1 10 10 10
SPP02N80C3
SPA02N80C3Final data
5 Transient thermal impedance
thJC = f (tp)
parameter: D = tp/T
10 -1
-3 10
-2 10
-1 10 10 10
thJC
6 Transient thermal impedance FullPAK
thJC = f (tp)
parameter: D = tp/t
10 1
-3 10
-2 10
-1 10 10 10
thJC
7 Typ. output characteristic
D = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
0.5
1.5
2.5
3.5
4.5
5.5
8 Typ. output characteristic
D = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
2.2
2.4
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