| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| SN74V263-10PZA |
TI/BB|Texas Instruments |
N/a |
87 |
 |
8192 × 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES |
| SN74V263-10PZA |
TI|Texas Instruments |
N/a |
50 |
|
8192 × 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES |
SN74V263-10PZA , 8192 × 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES
SN74V273-6PZA ,16384 x 18 Synchronous FIFO MemorySN74V263, SN74V273, SN74V283, SN74V293 8192 × 18, 16384 × 18, 32768 × 18, 65536 × 183.3-V CMOS FIRS ..
SN74V273-6PZA ,16384 x 18 Synchronous FIFO MemorySN74V263, SN74V273, SN74V283, SN74V293 8192 × 18, 16384 × 18, 32768 × 18, 65536 × 183.3-V CMOS FIRS ..
SN74V283-6PZA ,32768 x 18 Synchronous FIFO MemorySN74V263, SN74V273, SN74V283, SN74V293 8192 × 18, 16384 × 18, 32768 × 18, 65536 × 183.3-V CMOS FIRS ..
SN74V293-6PZA ,65536 x 18 Synchronous FIFO MemorySN74V263, SN74V273, SN74V283, SN74V293 8192 × 18, 16384 × 18, 32768 × 18, 65536 × 183.3-V CMOS FIRS ..
SPB02N60C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 3 ΩDS(on)• New revolutionary high voltage technologyI 1.8 AD• Ultra low gate chargeP-TO263 ..
SPB02N60S5 ,for lowest Conduction LossesCharacteristics, at Tj=25°C unless otherwise specifiedParameter Symbol Conditions Values Unitmin. t ..
SPB03N60C3 ,for lowest Conduction Losses & fastest SwitchingCharacteristicsParameter Symbol Conditions Values Unitmin. typ. max.Transconductance g V ≥2*I *R , ..
