SN74TVC3306DCTR ,Dual Voltage Clamp SCDS112D–MARCH 2001–REVISED DECEMBER 20146 Pin Configuration and FunctionsTop ViewDCT OR DCU PACKA ..
SN74TVC3306DCTRE4 ,Dual Voltage Clamp 8-SM8 -40 to 85Electrical Characteristics....... 512.1 Layout Guidelines.... 107.6 Switching Characteristics (AC, ..
SN74TVC3306DCUR ,Dual Voltage ClampMaximum Ratingsover operating free-air temperature range (unless otherwise noted)MIN MAX UNIT(2)V I ..
SN74TVC3306DCURG4 ,Dual Voltage Clamp 8-VSSOP -40 to 85Features 3 DescriptionThe SN74TVC3306 device provides three parallel1• Designed to Be Used in Volta ..
SN74V215-7PAG ,512 x 18 Synchronous FIFO Memory SN74V215, SN74V225, SN74V235, SN74V245 512 × 18, 1024 × 18, 2048 × 18, 4096 × 18DSP-SYNC FIRST-IN ..
SN74V235-7PAG ,2048 x 18 Synchronous FIFO Memory SN74V215, SN74V225, SN74V235, SN74V245 512 × 18, 1024 × 18, 2048 × 18, 4096 × 18DSP-SYNC FIRST-IN ..
SPB02N60C3 ,for lowest Conduction Losses & fastest SwitchingFeatureR 3 ΩDS(on)• New revolutionary high voltage technologyI 1.8 AD• Ultra low gate chargeP-TO263 ..
SPB02N60S5 ,for lowest Conduction LossesCharacteristics, at Tj=25°C unless otherwise specifiedParameter Symbol Conditions Values Unitmin. t ..
SPB03N60C3 ,for lowest Conduction Losses & fastest SwitchingCharacteristicsParameter Symbol Conditions Values Unitmin. typ. max.Transconductance g V ≥2*I *R , ..
SPB03N60S5 ,for lowest Conduction LossesCharacteristics, at Tj=25°C unless otherwise specifiedParameter Symbol Conditions Values Unitmin. t ..
SPB04N50C3 ,for lowest Conduction Losses & fastest SwitchingCharacteristics, at T =25°C unless otherwise specifiedjParameter Symbol Conditions Values Unitmin. ..
SPB04N60C2 ,for lowest Conduction Losses & fastest SwitchingFeatureProduct Summary• New revolutionary high voltage technologyV @ T650 VDS jmax• Ultra low gate ..
SN74TVC3306DCTR-SN74TVC3306DCTRE4-SN74TVC3306DCUR-SN74TVC3306DCURG4
Dual Voltage Clamp
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SN74TVC3306SCDS112D –MARCH 2001–REVISED DECEMBER 2014
SN74TVC3306 Dual Voltage Clamp Features 3 DescriptionThe SN74TVC3306 device provides three parallel Designedto Be Usedin Voltage-Limiting NMOS pass transistors witha common unbufferedApplications gate. The low on-state resistanceof the switch allows• 3.5-Ω On-State Connection Between connectionsto be made with minimal propagationPortsA andB delay. Flow-Through Pinout for Easeof Printed Circuit The device can be used asa dual switch, with theBoard Trace Routing gates cascaded together toa reference transistor. Direct Interface With GTL+ Levels The low-voltage sideof each pass transistoris limiteda voltage set by the reference transistor. Thisis• Latch-Up Performance Exceeds 100 mA Per done to protect components with inputs that areJESD 78, ClassII sensitiveto high-state voltage-level overshoots.• ESD Protection Exceeds JESD22 2000-V Human-Body Model
Device Information(1) 200-V Machine Model Model (1) Forall available packages, see the orderable addendumat
the endofthe data sheet. device has bidirectional capability across many voltage levels. The voltage levels documentedin examples.
