SN74LVC1G386DCKR ,SINGLE 3-INPUT POSITIVE-XOR GATEmaximum ratings" may cause permanent damage to the device. These are stress ratingsonly, and functi ..
SN74LVC1G386DCKR ,SINGLE 3-INPUT POSITIVE-XOR GATEFEATURES DESCRIPTIONThe SN74LVC1G386 device performs the Boolean2• Available in the Texas Instrumen ..
SN74LVC1G38DBVR ,Single 2-Input NAND Gate with Open Drain OutputElectrical Characteristics....... 612 Device and Documentation Support........ 146.6 Switching Char ..
SN74LVC1G38DBVR ,Single 2-Input NAND Gate with Open Drain OutputFeatures 3 DescriptionThe SN74LVC1G38 device is designed for 1.65-V to1• Latch-Up Performance Excee ..
SN74LVC1G38DCKR ,Single 2-Input NAND Gate with Open Drain Output SCES538F–JANUARY 2004–REVISED OCTOBER 20175 Pin Configuration and FunctionsDBV PackageDCK Package5 ..
SN74LVC1G57DBVR ,CONFIGURABLE MULTIPLE-FUNCTION GATEfeatures configurable1• Supports 5-V V OperationCCmultiple functions. The output state is determine ..
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SN74LVC1G386DBVR-SN74LVC1G386DCKR
SINGLE 3-INPUT POSITIVE-XOR GATE
DBV PACKAGE
(TOP VIEW)GND VCC5 4B Y1A C
DCK PACKAGE
(TOP VIEW) 4BGNDACC C
DRY PACKAGE
(TOP VIEW)GND VCC 6B Y1
YZP PACKAGE
(BOTTOM VIEW)GND VCC Y C
DSF PACKAGE
(TOP VIEW)GND
VCC
SN74LVC1G386
www.ti.com SCES439E –APRIL 2003–REVISED DECEMBER 2013
Single 3-Input Positive-XOR Gate
Checkfor Samples: SN74LVC1G386
1FEATURES DESCRIPTIONThe SN74LVC1G386 device performs the Boolean
Availablein the Texas Instruments functionY=A×B×Cin positive logic.
NanoStar™ and NanoFree™
Packages NanoStar™ and NanoFree™ package technologyis major breakthrough in IC packaging concepts,
• Supports 5-V VCC Operation using the dieas the package.
• Inputs Accept Voltagesto 5.5VThis deviceis fully specified for partial-power-down
• Supports Down Translationto VCC applications using Ioff. The Ioff circuitry disables the
• Ioff Supports Live Insertion, Partial-Power- outputs, preventing damaging current backflow
Down Mode, Back-Drive Protection through the device whenitis powered down.
Latch-Up Performance Exceeds 100 mA
Per JESD 78, ClassII ESD Protection Exceeds JESD22 2000-V Human-Body Model (A114-A) 200-V Machine Model (A115-A) 1000-V Charged-Device Model (C101)
