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SN7002NINFINEONN/a83200avaiLow Voltage MOSFETs


SN7002N ,Low Voltage MOSFETsFeatureV 60 VDS• N-ChannelR 5 ΩDS(on)• Enhancement modeI 0.2 AD• Logic LevelSOT-23• dv/dt ratedDrai ..
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SN7002N
Low Voltage MOSFETs
SIPMOSÒ Small-Signal-TransistorProduct Summary
Feature

· N-Channel
· Enhancement mode
· Logic Level
· dv/dt ratedSOT-23
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Thermal Characteristics
Characteristics
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Static Characteristics
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Dynamic Characteristics
Gate Charge Characteristics
Reverse Diode
1 Power dissipationtot = f (TA)
0.04
0.08
0.12
0.16
0.2
0.24
0.28
0.32
0.38 SN7002N
tot
2 Drain current
D = f (TA)
parameter: VGS³ 10 V
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.22 SN7002N
3 Safe operating area
D = f ( VDS )
parameter : D = 0 , TA = 25 °C10 10 10 10 10
SN7002N
4 Transient thermal impedance
thJA = f (tp)
parameter : D = tp/T
-3 10
-2 10
-1 10 10 10 10
SN7002N
thJA
5 Typ. output characteristicD = f (VDS)
parameter: Tj = 25 °C, VGS
0.125
0.25
0.375
0.5
0.625
0.75
6 Typ. drain-source on resistance
DS(on) = f (ID)
parameter: Tj = 25 °C, VGS
0.75
1.5
2.25
3.75
4.5
5.25
7.5
DS(on)
7 Typ. transfer characteristics
D= f ( VGS ); VDS³ 2 x ID x RDS(on)max
parameter: Tj = 25 °C
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
8 Typ. forward transconductance
fs = f(ID)
parameter: Tj = 25 °C
0.05
0.1
0.15
0.2
0.25
0.3
0.4
gfs
9 Drain-source on-state resistanceDS(on) = f (Tj)
parameter : ID = 0.5 A, VGS = 10 V
10
11
12
SN7002N
DS(on)
10 Typ. gate threshold voltage
GS(th) = f (Tj)
parameter: VGS = VDS; ID =26µA
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.8
2.2
GS(th)
11 Typ. capacitances

C = f (VDS)
parameter: VGS=0, f=1 MHz, Tj = 25 °C10 10 10
12 Forward character. of reverse diode
F = f (VSD)
parameter: T
-3 10
-2 10
-1 10 10
SN7002N
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