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SMP80MC-200 |SMP80MC200STN/a100000avaiTrisil™ for telecom equipment protection


SMP80MC-200 ,Trisil™ for telecom equipment protectionApplicationsAny sensitive equipment requiring protection against lightning strikes and power crossi ..
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SMP80MC-200
Trisil™ for telecom equipment protection
February 2012 Doc ID 9702 Rev 5 1/11
SMP80MC
risil™ for telecom equipment protection
Features
Bidirectional crowbar protection Voltage: range from 120 V to 320 V Low VBO / VR ratio Micro capacitance equal to 12 pF @ 50 V Low leakage current: IR = 2 µA max Holding current: IH = 150 mA min. Repetitive peak pulse current:
IPP = 80 A (10/1000 µs)
Benefits
Trisils are not subject to ageing and provide a
fail safe mode in short circuit for better
protection. Helps equipment meet main standards such as
UL60950, IEC 950 / CSA C22.2 and UL1459. Epoxy meets UL94, V0. Package is JEDEC registered (DO-214AA).
Complies with the following standards
GR-1089 Core ITU-T-K20/K21 IEC 61000-4-5 TIA/EIA IS-968 UL497B recognized, UL file E136224
Applications

Any sensitive equipment requiring protection
against lightning strikes and power crossing: Terminals (phone, fax, modem...) and central
office equipment
Description

The SMP80MC is a series of micro capacitance
transient surge arrestors designed for the
protection of high debit rate communication
equipment. Its micro capacitance avoids any
distortion of the signal and is compatible with
digital transmission like ADSL2 and ADSL2+.
TM: Trisil is a trademark of STMicroelectronics.
Characteristics SMP80MC
2/11 Doc ID 9702 Rev 5
1 Characteristics

Table 1. In compliance with the following standards
SMP80MC Characteristics
Doc ID 9702 Rev 5 3/11


Figure 1.
Table 2. Absolute ratings (Tamb = 25 °C)
In fail safe mode the device acts as a short circuit.
Table 3. Thermal resistances
Characteristics SMP80MC
4/11 Doc ID 9702 Rev 5
Table 4. Electrical characteristics - values (Tamb = 25 °C) See Figure 10: Test circuit 1 for dynamic IBO and VBO parameters See Figure 11: Test circuit 2 for IBO and VBO parameters See Figure 12: Test circuit 3 for dynamic IH parameter VR = 50 V bias, VRMS = 1 V, F= 1 MHz VR = 2 V bias, VRMS = 1 V, F = 1 MHz
SMP80MC Characteristics
Doc ID 9702 Rev 5 5/11



Figure 2. Pulse waveform Figure 3. Non repetitive surge peak on-state
current versus overload duration
Figure 4. On-state voltage versus on-state
current (typical values)
Figure 5. Relative variation of holding
current versus junction
temperature
Figure 6. Relative variation of breakover
voltage versus junction
temperature
Figure 7. Relative variation of leakage
current versus junction
temperature (typical values)
Characteristics SMP80MC
6/11 Doc ID 9702 Rev 5

Figure 10. Test circuit 1 for dynamic IBO and VBO parameters
Figure 8. Variation of thermal impedance
junction to ambient versus pulse
duration
Figure 9. Relative variation of junction
capacitance versus reverse voltage
applied (typical values)
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