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SMP50N06-25 |SMP50N0625SILICONIN/a8avaiN-Channel Enhancement-Mode MOSFET


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SMP50N06-25
N-Channel Enhancement-Mode MOSFET
Siliconix SMP50N06-25
N-Channel Enhancement-Mode MOSFET, 25-mS2 rDs(0n)
175° C Maximum Junction Temperature
Product Summary
60 0.025 50
TO-220AB
DRAIN connected to TAB
G D S s
Top View N-Channel MOSFET
Absolute Maximum Ratings (TC = 25°C Unless Otherwise Noted)
Drain-Source Voltage VDS 60 V
Gate-Source Voltage Vos + 20
Tc = 25°C 50
Continuous Drain Current fr, l = 175°C) In
TC = 100°C 35
Pulsed Drain Current IBM 130 A
Continuous Source Current (Diode Conduction) IS 50
Avalanche Omen: I AR 50
Avalanche Energy L = 0.1 mH EAS 125 mJ
Repetitive Avalanche Energy" L = 0.05 mH EAR 62.5
TC = 25°C 131
Maximum Power Dissipation PD W
Tc = 100°C 65
Operating Junction and Storage Temperature Range Ts Tstg -55 to 175 "C
Lead Temperature (1/16" from case for 10 sec.) T TL 300
Thermal Resistance Ratings
Maximum Junction-to-Ambient RMA 80
Maximum Junction-to-Case ch 1.14 C) cw
CUse-to-Sink RthCS 1.0
Notes:
a, Duty cycle 5 1% T D
P-38492-Rev.G (09/05/94) I. I: aasuvas unauauu am; 1
Siliconix
SMP50N06-25
Specifications (Ts = 25°C Unless Otherwise Noted)
Parameter
Symbol
Test Condition
Drain-Source Breakdown Voltage V(BR)DSS VGS = O V, In 250 " 60 V
Gate Threshold Voltage VGS(th) VDS = Vos, ID = 1 mA 2 4
Gate-Body Leakage loss Vos = 0 V, Vos = $20 V 3:500 nA
VDs=48V,VGs=0V 25
Zero Gate Voltage Drain Current IDSS VDS = 48 V, VGS = 0 V, Ts = 125°C 250 [A
VDs=48V,VGs=0V,'1j--s175''C 500
On-State Drain Curremb ID(on) VDS = 10 V, VGS = 10 V 50 A
VGs = 10 V, ID = 25 A 0.020 0.025
Drain-Source On-State Resistanceb IDs(on) V65 1'.= 10 V, ID = 25 A, TY = 125°C 0.033 0.042 Q
VGs = 10 V, ID = 25 A, Ty = 175°C 0.043 0.0525
Forward Tyansconductanceb gtg VDS 15 v, ID 25 A 20 s
Input Capacitance Ciss 2000
Output Capacitance C033 VGs = o V, VDs = 25 V, f= 1 MH2 570
Reverse Transfer Capacitance Ctss 120 nC
Total Gate Charge q, 55 80
Gate-Source Charge Qgs VDS = 30 V, Vss = 10V, ID = 50A 9 15
Gate-Drain Charge di 24 40
TUrn-On Delay Time tkiton) 15 30
Rise Time tr VDD = 30 V, RI. = 0.6 Q 20 35
TUrn-Off Delay Time Woti) ID E 50 A, VGEN = 10 V, Ro = 2.5 Q 40 65 ns
Fall Time tt 15 30
Diode Forward Voltageb w, IF = 50 A, Vos = 0 V 2.0 V
Reverse Recovery Time tr, 130 as
Peak Reverse Recovery Current IRM(rec) IF = 50 A, di/dt = 100 Alps 10 A
Reverse Recovery Charge G, 0.7 11C
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width S 300 us, duty cycle s; 2%.
2 P-38492-Rev, G (09/05/94)
5 CCI 6250735 0020205 L20 D
Siliconix SMP50N06-25
Typical Characteristics (25°C Unless Otherwise Noted)
Output Characteristics 'minsfer Characteristics
100 I l I 50
V = 10, 9 8 V I
GS " s/tf'--- 7 V I
A 80 A 40 '
E 6 V ii
e 60 r t: 30
5 /r 6
tii'i 40 E 20
a 5 V a Tc = 125°C I
- 20 i - 10 I
3 v 25°C J,
/ I I \/ -55°c
0 r I 0 1
0 2 4 6 8 10 0 2 4 6 8 10
V93 - Drain-to-Source Voltage (V) VGs - Gate-to-Source Voltage (V)
'n'ansconductance On-Resistance vs. Drain Current
30 0.030
25 Ts = -55"C -
A A O,025 v =
e?.. o,-"''" o G GS 10 V
20 Saas-'"""""'""!
E w-''"" g 0.020 iciaiiaaaa--""
3 AC---- 125°C al
E 15 4 g V Vos = 20 V
E s)''''" 5 0.015
E 10 I
I / "i"
'ti 5 ET 0.010
0 0.005
0 10 20 30 40 50 0 20 40 60 80
Vos - Gate-to-Source Voltage (V) ID - Drain Current (A)
Capacitance Gate Charge
4000 10
V VDS = 30V
20 8 - ID = 50 A /
fi? 3000 g
sry S'
E g 6 /
g, CISS Ji /
g 2000 "ew-ii" 6 /
U CI,ss I
1000 PSS... 2
0 10 20 30 40 50 0 10 20 30 40 50 55
VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)
P-38492---Rev. G (09/05N4)
3 El 8350735 0020301: 05? E]
SMP50N06-25
Siliconix
. . . o .
Typical Characteristics (25 C Unless Otherwise Noted)
On-Resistance vs. I unction Temperature 100 Source-Drain Diode Forward Voltage
2.4 I I
2.2 - ID = 25 A /
g 2.0 / 'ii. Ts = 125°C
iriis 1.8 / a
‘3 £1 1.6 5
q g / g 10
5' o 1.4 g
tE. / m
L 1.2 I
g 1.0 /’ -
0.8 w,,,,,,-''''' Vos = 10 V
0 6 / l 1 1
--20 -4O 0 40 80 120 160 200 0.5 0.7 0.9 1.1 1.3
T1 - Junction Temperature (°C) V51) - Source-to-Drain Voltage (V)
Thermal Ratings
Maximum Avalanche and Drain Current
vs. Case Temperature Safe Operating Area
60 300
50 100
ft'..":, ' tii.'
ii 40 "s, E
t: "ss I: 10
d "s. d
.5 30 s E
I 20 l
p, 3 1 TC = 25°C
10 ) Single Pulse
0 25 50 75 100 125 150 175 0.1 1 10 100
Tc - Case Temperature (°C) VDS - Drain-to-Source Voltage (V)
2 Normalized Thermal Transient Impedance, J unction-to-Case
Duty Cycle = 0.5
0.1 0.05
Normalized Effective Transient
Thermal Impedance
Single Pulse
10-5 10-4 10-3 10-2 10-1 1 3
Square Wave Pulse Duration (sec)
4 P-38492-Rev. G (09/05/94)
E III 525'4735 DDEDED? TT3 ©

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