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Partno Mfg Dc Qty AvailableDescript
SMP30-100 |SMP30100STN/a1800avaiTRISIL
SMP30-120 |SMP30120STN/a1800avaiTRISIL
SMP30-130 |SMP30130STN/a100000avaiTRISIL
SMP30-180 |SMP30180STN/a100000avaiTRISIL
SMP30-200 |SMP30200STN/a100000avaiTRISIL
SMP30-220 |SMP30220STN/a100000avaiTRISIL
SMP30-240 |SMP30240STN/a100000avaiTRISIL
SMP30-270 |SMP30270STN/a100000avaiTRISIL
SMP30-62 |SMP3062STN/a100000avaiTRISIL
SMP30-68 |SMP3068ST N/a100000avaiTRISIL


SMP30-130 ,TRISILFEATURESn Bidirectional crowbar protectionn Voltage range from 62V to 270Vn Low capacitance from 12 ..
SMP30-180 ,TRISIL® SMP30-xxxTELECOM EQUIPMENT PROTECTION: TRISIL™
SMP30-200 ,TRISIL® SMP30-xxxTELECOM EQUIPMENT PROTECTION: TRISIL™
SMP30-220 ,TRISILFEATURESn Bidirectional crowbar protectionn Voltage range from 62V to 270Vn Low capacitance from 12 ..
SMP30-240 ,TRISILAPPLICATIONSTelecommunication equipment such asn Analog and digital line cards (xDSL, T1/E1,SCHEMAT ..
SMP30-270 ,TRISILAPPLICATIONSTelecommunication equipment such asn Analog and digital line cards (xDSL, T1/E1,SCHEMAT ..
SN74ALS876ADW , DUAL 4-BIT D-TYPE EDGE-TRIGGERED FLIP-FLOPS
SN74ALS990DW ,Octal D-Type Transparent Read-Back Latcheslogic diagram (positive logic)1OERB11LE21D1D191QC1To Seven Other Channelstiming diagramData Bus Inp ..
SN74ALS990DWR ,Octal D-Type Transparent Read-Back Latchesmaximum ratings over operating free-air temperature range (unless otherwise noted)Supply voltage, V ..
SN74ALS990DWR ,Octal D-Type Transparent Read-Back Latchesmaximum ratings” may cause permanent damage to the device. These are stress ratings only, andfuncti ..
SN74ALS990N ,Octal D-Type Transparent Read-Back Latches SN74ALS990 8-BIT D-TYPE TRANSPARENT READ-BACK LATCH SDAS027B – APRIL 1984 – REVISED JANUARY 1995D ..
SN74ALS992DW ,9-Bit D-Type Transparent Read-Back Latches With 3-State Outputs SN74ALS992 9-BIT D-TYPE TRANSPARENT READ-BACK LATCH WITH 3-STATE OUTPUTS SDAS028B – APRIL 1984 – R ..


SMP30-100-SMP30-120-SMP30-130-SMP30-180-SMP30-200-SMP30-220-SMP30-240-SMP30-270-SMP30-62-SMP30-68
TRISIL
1/8
SMP30-xxx
Bidirectional crowbar protection Voltage range from 62Vto 270V Low capacitance from 12pFto 20pF typ.@ 50V Low leakage current:IR= 2μA max. Holding current:IH= 150 mA min. Repetitive peak pulse current:
IPP=30A (10/1000 μs)
FEATURES

The SMP30-xxx series has been designedto
protect telecommunication equipment against
lightning and transient inducedby AC power lines.
The package/ die size ratio has been optimizedby
using the SMA package.
DESCRIPTION
SCHEMATIC DIAGRAM

TELECOM EQUIPMENT PROTECTION: TRISIL™
November 2002- Ed:4B
Telecommunication equipment suchas Analog and digital line cards (xDSL, T1/E1,
ISDN...). Terminals (phone, fax, modem...) and central
office equipment.
MAIN APPLICATIONS

Trisils are not subjectto ageing and providea fail safe modein short circuit fora better protection. Trisils
are usedto help equipmentto meet various standards suchas UL1950, IEC950/ CSA C22.2, UL1459
and FCC part 68. Trisils have UL94 V0 resin approved. SMA packageis JEDEC registred. (Trisils are UL
497B approved- file: E136224).
BENEFITS
SMP30-xxx
2/8 COMPLIANCES WITH THE FOLLOWING STANDARDS
ELECTRICAL CHARACTERISTICS

(Tamb= 25°C)
THERMAL RESISTANCES
SMP30-xxx
3/8
ABSOLUTE RATINGS
(Tamb= 25°C)
tr: rise time (μs)
tp: pulse duration time (μs)
ex: Pulse waveform 10/1000μs= 10μs tp= 1000μs
Repetitive peak pulse current
SMP30-xxx
4/8
Note1:
IR measuredatVR guaranteeV BRmin≥VR
Note2:
Seefunctional breakover voltagetest circuit1.
Note3:
Seetest circuit2.
Note4:
Seefunctional holdingcurrenttest circuit3.
Note5:
VR= 50V bias,VRMS=1V,F =1MHz.
Note6:
VR=2V bias, VRMS=1V,F= 1MHz
ELECTRICAL PARAMETERS
(Tamb= 25°C)
1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 (A)TSM
Fig.1:
Non repetitive surge peak on-state current
versus overload duration(Tj initial= 25°C) 234 56 789 10 (A)T
Fig.2:
On-state voltage versus on-state current
(typical values).
SMP30-xxx
5/8
-40 -20 0 20 40 60 80 100 120
2.0[T] / I [T=25°C]Hj Hj
Fig.3:
Relative variationof holding current versus
junction temperature.
-40 -20 0 20 40 60 80 100
1.10 [T ] /V [T =25°C]BOj BOj
Fig.4:
Relative variationof breakover voltage ver-
sus junction temperature. 50 75 100 125
2000 [T] / I [T =25°C]RMj RMj
Fig.5:
Relative variationof leakage current versus
junction temperature (typical values).
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
1E-1
1E+0
1E+1
1E+2 (°C/W)th(j-a)
Fig.6:
Relative variationof thermal impedance
versus pulse duration. 2 5 10 20 50 100 300
C[V ] / C[V =50V]RR
Fig.7: Relative variationof junction capacitance
versus reverse voltage applied (typical values).
SMP30-xxx
6/8
TEST CIRCUIT1 FOR DYNAMIC IBO and VBO PARAMETERS
TEST CIRCUIT2 for IBO AND VBO PARAMETERS.
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