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SMBYW02-200 |SMBYW02200N/a12250avaiHIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES


SMBYW02-200 ,HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODESFEATURES AND BENEFITSSUITED FOR SMPSVERY LOW CONDUCTION LOSSESNEGLIGIBLE SWITCHING LOSSESSMBHIGH SU ..
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SMBYW02-200
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
SMBYW02-200
October 1999 - Ed: 4C
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
ABSOLUTE RATINGS (limiting values)

Single chip rectifier suited for Switch Mode Power
Supplies and high frequency DC to DC converters.
Packaged in SMB, this surface mount device is
intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
applications.
DESCRIPTION

SUITED FOR SMPS
VERY LOW CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
HIGH SURGE CURRENT CAPABILITY
LOW FORWARD AND REVERSE RECOVERY
TIMES
FEATURES AND BENEFITS
MAIN PRODUCT CHARACTERISTICS

1/5
Pulse test : * tp = 380 μs, δ < 2 %
** tp = 5 ms, δ < 2 %
To evaluate the conduction losses use the following equation :
P = 0.7 x IF(AV) + 0.075 x IF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS
RECOVERY CHARACTERISTICS
THERMAL RESISTANCE
SMBYW02-200

2/5
0.0 0.4 0.8 1.2 1.6 2.0 2.40.0
2.5 F(av)(W)
Fig. 1:
Low frequency power losses versus
average current.
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.00 M(A)
Fig. 2: Peak current versus form factor.
0.001 0.01 0.1 1 100.01
Fig. 4:
Relative variation of thermal impedance
junction to lead versus pulse duration.
0.001 0.01 0.1 1 100.0
IM(A)
Fig. 3: Non repetitive surge peak forward current

versus overload duration.
0.1 1 10
VFM(V)
Fig. 5:
Voltage drop versus forward current
(maximum values). 20 40 60 80 100 120 140 160
F(av)(A)I
Fig. 6:
Average current versus ambient
temperature (δ=0.5).
SMBYW02-200

3/5
Fig. 8: Recovery time versus dIF/dt.Fig. 7: Capacitance versus reverse voltage
applied.
Fig. 10:
Dynamic parameters versus junction
temperature.
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.00
100 Rth(j-a)
Fig. 11: Thermal resistance junction to ambient

versus copper surface under each lead.
Fig. 9: Peak reverse current versus dIF/dt.
SMBYW02-200

4/5
PACKAGE MECHANICAL DATA
SMB
FOOTPRINT DIMENSIONS (in millimeters)

SMB
. consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
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http://

Band indicates cathode
Epoxy meets UL94,V0
SMBYW02-200

5/5
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