SMBYW01-200 ,HIGH EFFICIENCY FAST RECOVERY DIODEFEATURES AND BENEFITSVERY LOW SWITCHING LOSSESLOW FORWARD VOLTAGE DROP BIPOLARDEVICELOW PEAK FORWAR ..
SMBYW02-200 ,HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODESFEATURES AND BENEFITSSUITED FOR SMPSVERY LOW CONDUCTION LOSSESNEGLIGIBLE SWITCHING LOSSESSMBHIGH SU ..
SMBYW04-200 ,HIGH EFFICIENCY FAST RECOVERY DIODESFEATURES AND BENEFITSSUITED TO SMPS AND DRIVESSURFACE MOUNT PACKAGE23VERY LOW FORWARD LOSSES1(nc)NE ..
SMCG18CA , SURFACE MOUNT 1500 Watt Transient Voltage Suppressor
SMCG30A , Surface Mount TRANSZORB® Transient Voltage Suppressors
SMCG30A , Surface Mount TRANSZORB® Transient Voltage Suppressors
SN7405DR ,Hex inverters with open collector outputslogic diagram (positive logic)211A 1Y3 42A2Y653A3Y9 84A4Y10115A5Y13 126A 6YY = APin numbers shown a ..
SN7405N ,Hex inverters with open collector outputsmaximum ratings” may cause permanent damage to the device. These are stress ratings only, andfuncti ..
SN7406 ,Hex inverter buffers / drivers with high-voltage outputsmaximum ratings over operating free-air temperature (unless otherwise noted)Supply voltage, V (see ..
SN7406D ,Hex inverter buffers / drivers with high-voltage outputsmaximum ratings over operating free-air temperature (unless otherwise noted)Supply voltage, V (see ..
SN7406DR ,Hex inverter buffers / drivers with high-voltage outputsmaximum ratings” may cause permanent damage to the device. These are stress ratings only, andfuncti ..
SN7406N ,Hex inverter buffers / drivers with high-voltage outputsmaximum ratings” may cause permanent damage to the device. These are stress ratings only, andfuncti ..
SMBYW01-200
HIGH EFFICIENCY FAST RECOVERY DIODE
SMBYW01-200October 1999 - Ed: 4A
HIGH EFFICIENCY FAST RECOVERY DIODE
ABSOLUTE RATINGS (limiting values)Single chip rectifier suited to Switch Mode Power
Supplies and high frequency DC to DC converters.
Packaged in SMB, this surface mount device is
intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
applications.
DESCRIPTIONVERY LOW SWITCHING LOSSES
LOW FORWARD VOLTAGE DROP BIPOLAR
DEVICE
LOW PEAK FORWARD VOLTAGE FOR TELE-
COM TRANSIENT OPERATION SUCH AS IN
LIGHTING PROTECTION CIRCUITS
FEATURES AND BENEFITS
MAIN PRODUCT CHARACTERISTICS1/5
Pulse test : * tp = 380 μs, δ < 2 %
** tp = 5 ms, δ < 2 %
To evaluate the maximum conduction losses use the following equation :
P = 0.58 x IF(AV) + 0.118 x IF2 (RMS)
STATIC ELECTRICAL CHARACTERISTICS
RECOVERY CHARACTERISTICS
THERMAL RESISTANCES
SMBYW01-2002/5
0.0 0.2 0.4 0.6 0.8 1.0 1.20.0
PF(av)(W)
Fig. 1: Average forward power dissipation versus
average forward current .
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.00
IM(A)
Fig. 2: Peak current versus form factor. 25 50 75 100 125 1500.0
IF(av)(A)
Fig. 3: Average forward current versus ambient
temperature (δ=0.5).
1E-3 1E-2 1E-1 1E+02
IM(A)
Fig. 4: Non repetitive surge peak forward currentversus overload duration.
1E-2 1E-1 1E+0 1E+1 1E+2 5E+20.01
Zth(j-a)(°C/W)
Fig. 5: Variation of thermal impedance junction to
ambient versus pulse duration (recommended pad
layout, epoxy FR4, e(Cu)=35μm).
0.0 0.4 0.8 1.2 1.6 2.0 2.40.01
VFM(V)
Fig 6: Forward voltage drop versus forward current
(maximum values).
SMBYW01-2003/5
10 100 2000
C(pF)
Fig. 7: Junction capacitance versus reverse
voltage applied (typical values). 20 40 60 80 100 120 140 160 180 2000
IRM(A)
Fig. 8: Reverse recovery current versus dIF/dt . 20 40 60 80 100 120 140 160 180 2000
trr(ns)
Fig. 9: Reverse recovery time versus dIF/dt. 20 40 60 80 100 120 140 160 180 2000
Qrr(nC)
Fig. 10: Reverse recovery charges versus dIF/dt. 25 50 75 100 125 1500.25
Qrr;IRM[Tj] / Qrr;IRM[Tj=125°C]
Fig. 11: Dynamic parameters versus junction
temperature. 1234 50
Rth(j-a) (°C/W)
Fig. 12: Thermal resistance junction to ambient
versus copper surface under each lead (Epoxy
printed circuit board FR4, copper thickness: 35μm)
SMBYW01-2004/5
PACKAGE MECHANICAL DATASMB
FOOT PRINT DIMENSIONS (in millimeters)SMB (Plastic)
. consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1999 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
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http://Band indicates cathode
Epoxy meets UL94,V0
SMBYW01-2005/5
:
www.ic-phoenix.com
.
