SMBT3906U ,General Purpose TransistorsSMBT3906UPNP Silicon Switching Transistor Array4
SMBT3906U
General Purpose Transistors
SMBT3906U
PNP Silicon Switching Transistor Array High DC current gain: 0.1mA to 100mA Low collector-emitter saturation voltage Two ( galvanic) internal isolated Transistors
with good matching in one package Complementary type: SMBT3904U (NPN)
EHA0717521E2B1E1
TR1
TR2
Maximum Ratings
Thermal ResistanceFor calculation of RthJA please refer to Application Note Thermal Resistance
SMBT3906U
Electrical Characteristics at TA =25°C, unless otherwise specified.
DC Characteristics
SMBT3906U
Electrical Characteristics at TA = 25°C, unless otherwise specified.
AC Characteristics
SMBT3906U
Test circuit
Delay and rise timeEHN00059
-3.0 V
+0.5 V
<4.0
-10.6 V= 2%
<1.0
Storage time and fall timeEHN00060
-3.0 V
+9.1 V
<4.0 pF
1N916
<1.0 nsk
SMBT3906U
Total power dissipation Ptot = f (TS)
50
100
150
200
250
300
400
tot
Permissible Pulse Load RthJS = f (tp)
10 0 10 10 10 10
thJS
Permissible Pulse Load totmax / PtotDC = f (tp)
10 0 10 10 10
totmax
/ P
totDC
SMBT3906U
Saturation voltage ICEsat)FE
EHP00767V
BE sat0
CE satV,
DC current gain hCE = 10V, normalized10mA-11010-1012
Short-circuit forward current
transfer ratio h21e = f(IC)CE = 10V, f = 1MHz10
21e1-101
Open-circuit output admittance22e = f (IC)CE
EHP00771
22e0-101
