SMBT3906 E6327-SMBT3906E6327-SMBT3906E-6327 Fast Delivery |IC PHOENIX CO.,LIMITED

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Partno	Mfg	Dc	Qty	Available	Descript
SMBT3906 E6327 \|SMBT3906E6327	INFINEON	N/a	15400	avai	PNP Silicon Switching Transistor Arra...
SMBT3906E6327	TaiwanINFINEON	N/a	90000	avai	PNP Silicon Switching Transistor Arra...
SMBT3906E6327	INFINEON	N/a	90000	avai	PNP Silicon Switching Transistor Arra...
SMBT3906E-6327 \|SMBT3906E6327	SIEMENS	N/a	1079	avai	PNP Silicon Switching Transistor Arra...

SMBT3906E6327 ,PNP Silicon Switching Transistor Arra...SMBT 3906PNP Silicon Switching Transistor3

SMBT3906 E6327-SMBT3906E6327-SMBT3906E-6327
PNP Silicon Switching Transistor Arra...
SMBT 3906
PNP Silicon Switching Transistor High DC current gain: 0.1mA to 100mA Low collector-emitter saturation voltage Complementary type: SMBT 3904 (NPN)
Maximum Ratings
Thermal Resistance
SMBT 3906
Electrical Characteristics at TA = 25°C, unless otherwise specified.
DC Characteristics
SMBT 3906
Electrical Characteristics at TA = 25°C, unless otherwise specified.
AC Characteristics
SMBT 3906
Test circuits
Delay and rise time
EHN00059
-3.0 V
+0.5 V
-10.6 V= 2%
<1.0
Storage and fall time
EHN00060
-3.0 V
1N916
<1.0 nsk
SMBT 3906
Total power dissipation PS)
* Package mounted on epoxy0
15050100˚C
PtotT;AS
Saturation voltage ICEsat)FE
EHP00767V
BE sat0
CE satV,
DC current gain hFE = f (IC)CE = 1V, normalized
EHP00774-1-1012
Permissible pulse loadtotmax / PtotDC = f (tp)1010-5-4-3-20
totmax
totPDC
SMBT 3906
Open-circuit output admittance22eCE
EHP00771mA
22e010-1015
Short-circuit forward current
transfer ratio hCE = 10V, f = 1MHz10mA
21e110-1015
Delay time td = f (IC)
Rise time tr = f (IC)0012td,
Fall time tf = f (IC)
EHP007730012= 40 V

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