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Partno	Mfg	Dc	Qty	Available	Descript
SMBT3906	INFINEON	N/a	3000	avai	Switching Transistors

SMBT3906 ,Switching TransistorsSMBT3906/ MMBT3906PNP Silicon Switching Transistor3• High DC current gain: 0.1 mA to 100 mA• Low co ..
SMBT3906 E6327 ,PNP Silicon Switching Transistor Arra...SMBT 3906PNP Silicon Switching Transistor3

SMBT3906
Switching Transistors
PNP Silicon Switching Transistor
• High DC current gain: 0.1 mA to 100 mA
• Low collector-emitter saturation voltage
• Complementary type:
SMBT3904/ MMBT3904 (NPN)
Maximum Ratings
Thermal ResistanceFor calculation of RthJA please refer to Application Note Thermal Resistance
SMBT3906/ MMBT3906
DC CharacteristicsPuls test: t ≤ 300µs, D = 2%
SMBT3906/ MMBT3906
AC Characteristics
SMBT3906/ MMBT3906
Test circuit
Delay and rise time
Storage and fall time
SMBT3906/ MMBT3906
DC current gain hFE = ƒ(IC)
VCE = 1 V, normalized10mA-11010-1012
Saturation voltage IC = ƒ(VBEsat; VCEsat)
hFE = 10
EHP00767V
BE sat0
CE satV,
Total power dissipation Ptot = ƒ(TA*; TS)
* Package mounted on epoxy0
15050100˚C
400tot
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)10-510-410-310-2100s
totmax
totPDC
SMBT3906/ MMBT3906
Short-circuit forward current
transfer ratio h21e = ƒ(IC)
VCE = 10V, f = 1MHz10mA
21e110-1015
Open-circuit reverse voltage
transfer ratio h12e = ƒ(IC)
VCE = 10V, f = 1kHz
EHP00769mA-510-101
Open-circuit output admittance
h22e = ƒ(IC)
VCE = 10V, f = 1MHz10mA
22e010-1015
Input impedance
h11e = ƒ(IC)
VCE = 10 V, f = 1kHz
EHP00768110mA100
11eh

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