SMBT3904E6327 ,NPN Silicon Switching Transistor with...Characteristics at T = 25°C, unless otherwise specified.AParameter Symbol Values Unitmin. typ. max. ..
SMBT3904E6327 ,NPN Silicon Switching Transistor with...CharacteristicsCollector-emitter breakdown voltage 40 - - VV(BR)CEOI = 1 mA, I = 0 C BCollector-bas ..
SMBT3904E6327 ,NPN Silicon Switching Transistor with...CharacteristicsCollector-emitter breakdown voltage 40 - - VV(BR)CEOI = 1 mA, I = 0 C BCollector-bas ..
SMBT3904E-6327 ,NPN Silicon Switching Transistor with...SMBT 3904NPN Silicon Switching Transistor3• High DC current gain: 0.1mA to 100mA• Low collector-emi ..
SMBT3904S ,NPN Silicon Switching Transistor Array
SMBT3904UPN ,General Purpose TransistorsSMBT3904UPNNPN/PNP Silicon Switching Transistor Array 4
SMBT 3904 E6327-SMBT3904-SMBT3904E6327-SMBT3904E-6327
NPN Silicon Switching Transistor with...
SMBT 3904
NPN Silicon Switching Transistor• High DC current gain: 0.1mA to 100mA
• Low collector-emitter saturation voltage
• Complementary type: SMBT 3906 (PNP)
Maximum Ratings
Thermal Resistance
SMBT 3904
Electrical Characteristics at TA = 25°C, unless otherwise specified.
DC Characteristics
SMBT 3904
Electrical Characteristics at TA = 25°C, unless otherwise specified.
AC Characteristics
SMBT 3904
Test circuits
Delay and rise timeEHN00061
+3.0 V
<4.0 pF
+10.9 V= 2%
<1.0 ns
Storage and fall time+3.0 V
1N916
<1.050010t1Ω
SMBT 3904
Total power dissipation PS)
* Package mounted on epoxy0
15050100˚C
PtotT;AS, VCEsat)
EHP00756V
BE sat0
CE satV,BE
Permissible pulse loadtotmax / PtotDC = f (tp)1010-5-4-3-20
totmax
totPDC
DC current gain hFE = f (IC) = 10V, normalized
EHP00765-1-1012
SMBT 3904
Short-circuit forward current
transfer ratio hCE = 10V, f = 1MHz10mA21e110-101
Open-circuit output admittanceEHP00760mA010-101
Delay time td = f (IC)
Rise time tr = f (IC)0012d,= 2 V
Storage time tstg = f(IC)
EHP007620012
10
