SM6T56CA ,Transil Std 600WFeatures■ Peak pulse power: – 600 W (10/1000 µs)– 4 kW (8/20 µs)■ Breakdown voltage range: from 6. ..
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SM6T56CA
Transil Std 600W
October 2010 Doc ID 3082 Rev 9 1/10
SM6T ransil™
Features Peak pulse power: 600 W (10/1000 µs) 4 kW (8/20 µs) Breakdown voltage range: from 6.8 V to 220 V Unidirectional and bidirectional types Low leakage current: 0.2 µA at 25 °C 1 µA at 85 °C Operating Tj max: 150 °C High power capability at Tjmax: 515 W (10/1000 µs) JEDEC registered package outline
Complies with the following standards IEC 61000-4-2 level 4: 15 kV (air discharge) 8 kV (contact discharge) IEC 61000-4-5 MIL STD 883G, method 3015-7: class 3B: 25 kV HBM (human body model) UL 497B, file number: QVGQ2.E136224 Resin meets UL 94, V0 MIL-STD-750, method 2026 soldererability EIA STD RS-481 and IEC 60286-3 packing IPC 7531 footprint
DescriptionThe SM6T Transil series has been designed to
protect sensitive equipment against electrostatic
discharges according to IEC 61000-4-2 and MIL
STD 883, method 3015, and electrical overstress
according to IEC 61000-4-4 and 5. These devices
are more generally used against surges below
600 W (10/1000 µs).
Planar technology makes these devices suitable
for high-end equipment and SMPS where low
leakage current and high junction temperature are
required to provide reliability and stability over
time.
SM6T are packaged in SMB (SMB footprint in
accordance with IPC 7531 standard).
TM: Transil is a trademark of STMicroelectronics
Characteristics SM6T2/10 Doc ID 3082 Rev 9
1 Characteristics
Figure 1. Electrical characteristics - definitions
Figure 2. Pulse definition for electrical characteristics
Table 1. Absolute maximum ratings For a surge greater than the maximum values, the diode will fail in short-circuit.
Table 2. Thermal resistance
SM6T CharacteristicsDoc ID 3082 Rev 9 3/10
Table 3. Electrical characteristics, parameter values (Tamb = 25 °C) Pulse test : tp < 50 ms To calculate VBR versus junction temperature, use the following formula: VBR @ TJ = VBR @ 25°C x (1 + αT x (TJ – 25)). To calculate maximum clamping voltage at other surge level, use the following formula: VCL = RD x IPP + VBRmax. Surge capability given for both directions for unidirectional and bidirectional types.
Characteristics SM6T4/10 Doc ID 3082 Rev 9
Figure 5. Clamping voltage versus peak pulse current (maximum values)
Figure 3. Peak power dissipation versus
initial junction temperature
Figure 4. Peak pulse power versus
exponential pulse duration
SM6T CharacteristicsDoc ID 3082 Rev 9 5/10
Figure 6. Capacitance versus reverse
applied voltage for unidirectional
types (typical values)
Figure 7. Capacitance versus reverse applied
voltage for bidirectional types
(typical values)
Figure 8. Peak forward voltage drop versus
peak forward current
(typical values)
Figure 9. Relative variation of thermal
impedance junction to ambient
versus pulse duration
Figure 10. Thermal resistance junction to
ambient versus copper surface
under each lead
Figure 11. Leakage current versus junction
temperature (typical values)
Ordering information scheme SM6T6/10 Doc ID 3082 Rev 9
Ordering information scheme
Figure 12. Ordering information scheme
