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SKW30N60HS
IGBTs & DuoPacks
SKW30N60HS ^ High Speed IGBT in NPT-technology
• 30% lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for operation above 30 kHz
• NPT-Technology for 600V applications offers: - parallel switching capability
- moderate Eoff increase with temperature - very tight parameter distribution High ruggedness, temperature stable behaviour Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Maximum Ratings µs
SKW30N60HS ^
Thermal Resistance
Characteristic
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Static Characteristic
SKW30N60HS ^
Dynamic Characteristic
Switching Characteristic, Inductive Load, at Tj=25 °C
IGBT Characteristic
Anti-Parallel Diode Characteristic SKW30N60HS ^
Switching Characteristic, Inductive Load, at Tj=150 °C
IGBT Characteristic
Anti-Parallel Diode Characteristic SKW30N60HS ^
LLE
OR CURRE
10Hz100Hz1kHz10kHz100kHz0A
20A
40A
60A
80A
100A
LLE
OR CURRE10V100V1000V
0,1A
10A
100Af, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of switching frequency (Tj ≤ 150°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 11Ω)
Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤ 150°C; VGE=15V)
tot
WER DI
SSIPATIO
25°C50°C75°C100°C125°C
50W
100W
150W
LLE
OR CURRE
25°C75°C125°C0A
10A
20A
30A
40ATC, CASE TEMPERATURE TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature (Tj ≤ 150°C)
Figure 4. Collector current as a function of
case temperature (VGE ≤ 15V, Tj ≤ 150°C)
SKW30N60HS ^
LLE
OR CURRE2V4V6V0A
10A
LLE
OR CURRE2V4V6V0A
10A
20A
30A
40A
50A
60A
70A
80AVCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic (Tj = 25°C)
Figure 6. Typical output characteristic (Tj = 150°C)
LLE
OR CURRE2V4V6V8V0A
(sa
t),
COLLE
CTOR
EMITT S
TURATI
ON V
LTAGE
-50°C0°C50°C100°C150°C1,0V
1,5V
2,0V
2,5V
3,0V
3,5V
4,0V
4,5V
5,0V
5,5VVGE, GATE-EMITTER VOLTAGE TJ, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristic
(VCE=10V)
Figure 8. Typical collector-emitter
saturation voltage as a function of junction temperature
(VGE = 15V)
SKW30N60HS ^
t,
SWITC
G T
IMES10A20A30A40A50A10ns
t,
SWITC
G T
IMES5Ω10Ω15Ω20Ω25Ω10 ns
100 nsIC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 9. Typical switching times as a function of collector current
(inductive load, TJ=150°C, VCE=400V, VGE=0/15V, RG=11Ω,
Dynamic test circuit in Figure E)
Figure 10. Typical switching times as a function of gate resistor
(inductive load, TJ=150°C, VCE=400V, VGE=0/15V, IC=30A,
Dynamic test circuit in Figure E)
t,
SWITC
G T
MES
0°C50°C100°C150°C10ns
100ns
GE(
),
EMITT TRSHO
LTA
-50°C0°C50°C100°C150°C1,0V
1,5V
2,0V
2,5V
3,0V
3,5V
4,0V
4,5V
5,0V
5,5VTJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature (inductive load, VCE=400V,
VGE=0/15V, IC=30A, RG=11Ω, Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature (IC = 0.7mA)
