SKW20N60 Fast Delivery |IC PHOENIX CO.,LIMITED

SKW20N60 ,IGBTs & DuoPacksapplications offers:- very tight parameter distribution- high ruggedness, temperature stable behavi ..
SKW20N60 ,IGBTs & DuoPacksCharacteristicCollector-emitter breakdown voltage V 600 - - VV =0V, I =500µ A(BR)CES GE CCollector- ..
SKW20N60HS ,IGBTs & DuoPacksapplications offers:P-TO-247-3-1- parallel switching capability(TO-247AC)- moderate E increase with ..
SKW30N60 ,IGBTs & DuoPacksapplications offers:- very tight parameter distribution- high ruggedness, temperature stable behavi ..
SKW30N60HS ,IGBTs & DuoPacksapplications offers: P-TO-247-3-1 - parallel switching capability (TO-247AC) - moderate E increase ..
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SKW20N60
IGBTs & DuoPacks
SKW20N60
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
• 75% lower Eoff compared to previous generation
combined with low conduction losses
• Short circuit withstand time – 10 μs
• Designed for:
- Motor controls- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution- high ruggedness, temperature stable behaviour
- parallel switching capability
• Very soft, fast recovery anti-parallel EmCon diode
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Maximum Ratings
SKW20N60
Thermal Resistance
Characteristic
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Static Characteristic
Transconductance
Dynamic Characteristic
Reverse transfer capacitance
SKW20N60
Switching Characteristic, Inductive Load, at Tj=25 °C
IGBT Characteristic
Anti-Parallel Diode Characteristic
Switching Characteristic, Inductive Load, at Tj=150 °C
IGBT Characteristic
Anti-Parallel Diode Characteristic
SKW20N60
COLLE
OR CURRE
10Hz100Hz1kHz10kHz100kHz
10A
20A
30A
40A
50A
60A
70A
80A
90A
100A
110A
COLLE
OR CURRE10V100V1000V
0.1A
10A
100A
f, SWITCHING FREQUENCYVCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function ofswitching frequency
(Tj ≤ 150°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 16Ω)
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj ≤ 150°C)
tot
ISS
25°C50°C75°C100°C125°C
20W
40W
60W
80W
100W
120W
140W
160W
180W
200W
COLLE
OR CURRE
25°C50°C75°C100°C125°C0A
10A
20A
30A
40A
50A
TC, CASE TEMPERATURETC, CASE TEMPERATURE
Figure 3. Power dissipation as a functionof case temperature
(Tj ≤ 150°C)
Figure 4. Collector current as a function ofcase temperature
(VGE ≤ 15V, Tj ≤ 150°C)
SKW20N60
COLLE
OR CURRE0A
10A
20A
30A
40A
50A
60A
COLLE
OR CURRE0A
10A
20A
30A
40A
50A
60A
VCE, COLLECTOR-EMITTER VOLTAGEVCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(Tj = 25°C)
Figure 6. Typical output characteristics
(Tj = 150°C)
COLLE
OR CURRE2V4V6V8V10V0A
10A
20A
30A
40A
50A
60A
70A
CE(sat)
COLLE
ITT
SATU
VO
-50°C0°C50°C100°C150°C1.0V
1.5V
2.0V
2.5V
3.0V
3.5V
4.0V
VGE, GATE-EMITTER VOLTAGETj, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristics(VCE = 10V)Figure 8. Typical collector-emittersaturation voltage as a function of junction
temperature(VGE = 15V)
SKW20N60
ITC
TI
10A20A30A40A10ns
100ns
ITC
TI10Ω20Ω30Ω40Ω50Ω60Ω10ns
100ns
IC, COLLECTOR CURRENTRG, GATE RESISTOR
Figure 9. Typical switching times as afunction of collector current
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, RG = 16Ω,Dynamic test circuit in Figure E)
Figure 10. Typical switching times as afunction of gate resistor
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, IC = 20A,Dynamic test circuit in Figure E)
t,
CHI
0°C50°C100°C150°C10ns
100ns
GE(th)
ITT
TH
VO
-50°C0°C50°C100°C150°C
2.0V
2.5V
3.0V
3.5V
4.0V
4.5V
5.0V
5.5V
Tj, JUNCTION TEMPERATURETj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 20A, RG = 16Ω,
Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature(IC = 0.7mA)
SKW20N60
ITC
EN
SSE10A20A30A40A50A0.0mJ
0.5mJ
1.0mJ
1.5mJ
2.0mJ
2.5mJ
3.0mJ
ITC
EN
SSE10Ω20Ω30Ω40Ω50Ω60Ω0.0mJ
0.5mJ
1.0mJ
1.5mJ
2.0mJ
2.5mJ
3.0mJ
IC, COLLECTOR CURRENTRG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, RG = 16Ω,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, IC = 20A,Dynamic test circuit in Figure E)
ITC
EN
SSE
0°C50°C100°C150°C0.0mJ
0.2mJ
0.4mJ
0.6mJ
0.8mJ
1.0mJ
1.2mJ
1.4mJ
1.6mJ
thJC
SIEN
T TH
L I
1µs10µs100µs1ms10ms100ms1s10-4K/W-3K/W-2K/W-1K/W0K/W
Tj, JUNCTION TEMPERATUREtp, PULSE WIDTH
Figure 15. Typical switching energy losses
as a function of junction temperature(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 20A, RG = 16Ω,
Dynamic test circuit in Figure E)
Figure 16. IGBT transient thermal
impedance as a function of pulse width(D = tp / T)

Partno	Mfg	Dc	Qty	Available	Descript
SKW20N60	INFINEON	N/a	50	avai	IGBTs & DuoPacks
SKW20N60	INF	N/a	16	avai	IGBTs & DuoPacks