SKP15N60 Fast Delivery |IC PHOENIX CO.,LIMITED

SKP15N60 ,IGBTs & DuoPacksapplications offers:- very tight parameter distribution- high ruggedness, temperature stable behavi ..
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SKP15N60
Fast S-IGBT in NPT-Technology with An...
SKP15N60
SKB15N60, SKW15N60
Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
• 75% lower Eoff compared to previous generation combined with
low conduction losses
• Short circuit withstand time – 10 μs
• Designed for:- Motor controls- Inverter
• NPT-Technology for 600V applications offers:- very tight parameter distribution
- high ruggedness, temperature stable behaviour- parallel switching capability
• Very soft, fast recovery anti-parallel EmCon diode
Maximum Ratings
SKP15N60
SKB15N60, SKW15N60
Thermal Resistance
Characteristic
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Static Characteristic
Dynamic Characteristic
SKP15N60
SKB15N60, SKW15N60
Switching Characteristic, Inductive Load, at Tj=25 °C
IGBT Characteristic
Total switching energy
Anti-Parallel Diode Characteristic
Switching Characteristic, Inductive Load, at Tj=150 °CParameterSymbol
IGBT Characteristic
Rise time
Turn-off delay time
Turn-on energy
Total switching energy
VCC=400V,
IC=15A,
VGE=0/15V,
RG=21Ω
Energy losses include0.86
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
SKP15N60
SKB15N60, SKW15N60
COLLE
OR CURRE
10Hz100Hz1kHz10kHz100kHz
10A
20A
30A
40A
50A
60A
70A
80A
COLLE
OR CURRE10V100V1000V
0.1A
10A
f, SWITCHING FREQUENCYVCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency
(Tj ≤ 150°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 21Ω)
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj ≤ 150°C)
tot
ISS
25°C50°C75°C100°C125°C
20W
40W
60W
80W
100W
120W
140W
COLLE
OR CURRE
25°C50°C75°C100°C125°C0A
10A
15A
20A
25A
30A
TC, CASE TEMPERATURETC, CASE TEMPERATURE
Figure 3. Power dissipation as a functionof case temperature
(Tj ≤ 150°C)
Figure 4. Collector current as a function ofcase temperature
(VGE ≤ 15V, Tj ≤ 150°C)
SKP15N60
SKB15N60, SKW15N60
COLLE
OR CURRE0A
10A
15A
20A
25A
30A
35A
40A
45A
50A
COLLE
OR CURRE1V2V3V4V5V0A
10A
15A
20A
25A
30A
35A
40A
45A
VCE, COLLECTOR-EMITTER VOLTAGEVCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(Tj = 25°C)
Figure 6. Typical output characteristics
(Tj = 150°C)
COLLE
OR CURRE2V4V6V8V10V0A
10A
15A
20A
25A
30A
35A
40A
45A
50A
CE(sat)
COLLE
CTOR
ITT
SATU
VO
-50°C0°C50°C100°C150°C1.0V
1.5V
2.0V
2.5V
3.0V
3.5V
4.0V
VGE, GATE-EMITTER VOLTAGETj, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristics(VCE = 10V)Figure 8. Typical collector-emittersaturation voltage as a function of junction
temperature(VGE = 15V)
SKP15N60
SKB15N60, SKW15N60
t,
ITC
TI10A15A20A25A30A10ns
100ns
t,
ITC
TI20Ω40Ω60Ω10ns
100ns
IC, COLLECTOR CURRENTRG, GATE RESISTOR
Figure 9. Typical switching times as afunction of collector current
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, RG = 21Ω)
Figure 10. Typical switching times as afunction of gate resistor
(inductive load, Tj = 150°C, VCE = 400V,VGE = 0/+15V, IC = 15A)
CHI
0°C50°C100°C150°C10ns
100ns
GE(th)
ITT
TH
ESH
-50°C0°C50°C100°C150°C
2.0V
2.5V
3.0V
3.5V
4.0V
4.5V
5.0V
5.5V
Tj, JUNCTION TEMPERATURETj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as afunction of junction temperature
(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 15A, RG = 21Ω)
Figure 12. Gate-emitter threshold voltageas a function of junction temperature
(IC = 0.4mA)
SKP15N60
SKB15N60, SKW15N60
CHI
NG E5A10A15A20A25A30A35A0.0mJ
0.2mJ
0.4mJ
0.6mJ
0.8mJ
1.0mJ
1.2mJ
1.4mJ
1.6mJ
1.8mJ
CHI
NG E20Ω40Ω60Ω80Ω0.0mJ
0.2mJ
0.4mJ
0.6mJ
0.8mJ
1.0mJ
1.2mJ
1.4mJ
IC, COLLECTOR CURRENTRG, GATE RESISTOR
Figure 13. Typical switching energy lossesas a function of collector current
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, RG = 21Ω)
Figure 14. Typical switching energy lossesas a function of gate resistor
(inductive load, Tj = 150°C, VCE = 400V,VGE = 0/+15V, IC = 15A)
ITC
EN
SSE
0°C50°C100°C150°C0.0mJ
0.2mJ
0.4mJ
0.6mJ
0.8mJ
1.0mJ
thJC
SIEN
T TH
1µs10µs100µs1ms10ms100ms1s10-4K/W-3K/W-2K/W-1K/W0K/W
Tj, JUNCTION TEMPERATUREtp, PULSE WIDTH
Figure 15. Typical switching energy losses
as a function of junction temperature(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 15A, RG = 21Ω)
Figure 16. IGBT transient thermal
impedance as a function of pulse width(D = tp / T)

Partno	Mfg	Dc	Qty	Available	Descript
SKP15N60	INFINEON	N/a	20	avai	IGBTs & DuoPacks