SI9945DY ,Dual N-Channel Enhancement Mode MOSFETSi9945DYJune 1999Si9945DY*Dual N-Channel Enhancement Mode MOSFET
SI9947DY , Dual P-Channel Enhancement-Mode MOSFET
SI9947DY , Dual P-Channel Enhancement-Mode MOSFET
SI9947DY , Dual P-Channel Enhancement-Mode MOSFET
SI9947DY , Dual P-Channel Enhancement-Mode MOSFET
SI9953DY ,Dual P-Channel Enhancement Mode MOSFETSi9953DYVishay SiliconixDual P-Channel 20-V (D-S) MOSFET
SI9945DY
Dual N-Channel Enhancement Mode MOSFET
Si9945DY June 1999 Si9945DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are � 3.3 A, 60 V. R = 0.100 Ω @ V = 10 V DS(ON) GS produced using Fairchild Semiconductor’s advance R = 0.200 Ω @ V = 4.5 V process that has been especially tailored to minimize DS(ON) GS on-state resistance and yet maintain superior switching performance. � Low gate charge. These devices are well suited for low voltage and � Fast switching speed. battery powered applications where low in-line power � High power and current handling capability. loss and fast switching are required. Applications � Battery switch � Load switch � Motor controls ’� ’� ’� ’� *� 6� *� 62�� 6� L$EVROXWH�0D[LPXP�5DWLQJV��7$ 6\PERO 3DUDPHWHU 5DWLQJV 8QLWV 9H9 9H96± ,$’ X 3LLVZRH3:’ LLVZRH3 7W&-*° 7KHUPDO�&KDUDFWHULVWLFV EPD5° θ HD5° θ 3DFNDJH�2XWOLQHV�DQG�2UGHULQJ�,QIRUPDWLRQ ’HYLFH�0DUNLQJ ’HYLFH 5HHO�6L]H 7DSH�:LGWK 4XDQWLW\ ,6P ������GUXEMHFWJHWZRQ� 1999 Si9945DY Rev. A WLILFDWLRQULRUSLWKRXFKDQWRVXVRXUFHJPDQIDFWXLQDQ’LH XQLWVP¶¶’< -& &:1RWH7KHUPO5HVLVWDQFH-XQFWLRQWR&DV -$ &:7KHUPO5HVLVWDQFH-XQFWLRQWR$LHQW 67 WR2SHUDWLQJDQG6RUDJH-XQFWLRQ7HPSHUDWXUH5DQJH7 1RWHF 1RWHE 1RWHDU’LVSDWLRQIRU6QJOH2SHUDWLRQ U’LVSDWLRQIRU6QJOH2SHUDWLRQ 3OVHG 1RWHD&RQWLQXRXV’UDLQ&XUUHQW *6 *DWH6RXUF9ROWDJH ’66 ’UDLQ6RXUF9ROWDJH &XQOHVVRWKHUZVHQRWHG
