SI9945AEY ,Dual N-Channel Enhancement-Mode MOSFETSi9945AEYVishay SiliconixDual N-Channel 60-V (D-S), 175C MOSFET
SI9945AEY
Dual N-Channel Enhancement-Mode MOSFET
Si9945AEY
VISHAY
Vishay Siliconix
Dual N-Channel 60-V (D-S), 175°C MOSFET
PRODUCT SUMMARY
Vros (V) rDS(on) (C2) ID (A)
60 0.080@VGS=10V i3]
0.100@VGs=4.5V ce3.4
Top View
N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage V03 60
Gate-Source Voltage VGs i20
TA = 25°C ck 3.7
Continuous Drain Current (TJ = 175oC)a ID
TA = 70°C d: 3.2
Pulsed Drain Current IBM 25
Continuous Source Current (Diode Conduction)a Is 2
TA = 25°C 2.4
Maximum Power Dissipation" PD W
TA = 70°C 1.7
Operating Junction and Storage Temperature Range Ts Tstg -55 to 175 "C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typ Max Unit
t s 10 sec 62.5
Junction-to-Ambient:, RthUA ''CI1N
Steady State 93
a. Surface Mounted on I" x I" FR4 Board
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Document Number: 70758
S-57253-Reu C, 24-Feb-98
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Si9945AEY
VISHAY
Vishay Siliconix
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage Vegan) Vos = I/cs, ID = 250 WA 1.0 V
Gate-Body Leakage ksss VDS = 0 V, VGS = i20 V l 100 nA
Zero Gate Voltage Drain Current 'Dss VDS = 60 V, VGS = 0 V 1 WA
VDS=60 V,VGs=0V,TJ=55°C 10
On-State Drain Currenta ID(on) VDS 2 5 V, VGS = 10 V 20 A
Drain-Source On-State Resistancea rDs(on) VGS = 10 V, ID = 3.7 A 0.06 0.080 Q
VGS = 4.5 V, ID = 3.4 A (h075 0.100
Forward Transconductancea gts VDs = 15 V, ID = 3.7 A 11 S
Diode Forward Voltagea VSD Is = 2.0 A, VGS = O V 1.2
Dynamic"
Total Gate Charge Q9 11 20
Gate-Source Charge Qgs VDS = 30 V, VGS = 10 V, ID = 3.7 A 2 nC
Gate-Drain Charge di 2
Turn-On Delay Time [mom 9 20
Rise Tlme tr VDD = 30 V, RL = 30 Q 10 20
Turn-Off Delay Time td(ott) ID E 1 A, VGEN = 10 V, RG = 6 Q 21 40 ns
Fall Time tf 8 20
Source-Drain Reverse Recovery Time trr IF = 2.0 A, di/dt = 100 Alps 45 80
a. Pulsetest; pulse width 5 300 us, duty cycle 3 2%.
b. Guaranteed by design, not subject to production testing.
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Document Number: 70758
S-57253-Rev. C, 24-Feb-98
VISHAY Si9945AEY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
y; l h A v l l /
y GS - t "T 5 TC = -551 /
20 4 v 20 l "
p/ft,', 'c""jj'l,(
A r A 150°C
7: A ow'''' 2" I
C 15 c 15
's 'r,
o '''" o
(si 10 y (il, 10
Q 3 V D
_ 5 - 5
0 1 2 3 4 5 0 1 2 3 4 5 6
Vos - Drain-to-Source Voltage(V) VGS - Gate-to-Source Voltage(V)
On-Resistance vs. Drain Current Capacitance
0.20 800
A 0.16 k
cy 600 Ciss
i,; ué 'ss,.....,
o'si, 0.12 8
S' v - 4 5 v "w'" g
GS - . =
8 0.08 _...--- g
I _....,...----" I
"ii," v 10 v o 200
V GS =
3 0.04 ?ss, Coss
Crss "s...,
0 5 1O 15 20 25 0 10 20 30 40 50 60
b - Drain Current (A) VDS - Drain-to-Source Voltage(V)
10 Gate Charge 2 4 On-Resistance vs. Junction Temperature
7 8_vDs=30v 2.0-vss--10V ,/
w 10:3.7A f A 10:3.7A ',,,,,,p'''''''
tl',) E
g 8 1.6 ""''
y '5 = 1 2 /
o q) (U . I
T ' g "
s. 4 6 2 s,.,,-'"'
i',, 1/ I V 0.8 ,I
0 / "il'" /
I 2 it"
8 L 0.4
0 2 4 6 8 10 -50 -25 0 25 50 75 100 125 150 175
% - Total Gate Charge (nC) To - Junction Temperature (°C)
Document Number: 70758
www.vishay.com . FaxBack 408-970-5600
S-57253-Reu C, 24-Feb-98
Si9945AEY
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
30 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
A 0.16
:S. 10 v
g T J = 175°C 9 0.12
CT (l)
o o 0.08
I L I = 3 7 A "ss....,,...,
(l) f.:.cy D .
- g 0.04
O 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10
VsD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.6 120
0.3 "s, 90
"s, ID = 250 0A l
a: 0.0
g "ss, t 60 N
"ii'." -0 3 \ E: N
a "N M
2 "ss, k
-0.6 'ts N
-50 -25 0 25 50 75 100 125 150 175 0.001 0.01 0.1 1 10 100 1000
T J - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
E g 0.2
_ g Notes:
15 E PD”
E a 0.1 1
u E t _
l-lj' -ly-1 t2 1
tQ 1.Du Cgcle,D--t'
E 0.02 ty y te
2 2. Per Unit Base = RNA = 93°CNV
. 3. TJM - TA = PDMZIhJAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 10+2 10+3
Square Wave Pulse Duration (sec)
www.vishay.com . FaxBack 408-970-5600 Document Number: 70758
b4 S-57253-Rev. C, 24-Feb-98
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