SI9942DY ,N/P-Channel 30-V (D-S) PairSi9942DYVishay SiliconixComplimentary 20-V (D-S) MOSFET
SI9942DY
N/P-Channel 30-V (D-S) Pair
VISHAY Si9942DY
Vishay Siliconix
Complimentary 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDSion) (C2) ID (A)
0.125 V = 1 .
N-Channel 20 @ GS 0 V i3 0
0.250@VGs=4.5V $2.0
0.200 V =-10V i2.5
P-Channel -20 @ GS
0.350@Vss=-4.5V $2.0
D1 D1 Se
G.o_| GZ°_|
Top View
81 Dz De
N-Channel MOSFET P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol N-Channel P-Channel Unit
Drain-Source Voltage Vos 20 -20 V
Gate-Source Voltage VGS ck 20 ck 20
TA=25°C 13.0 322.5
Continuous Drain Current (TJ = 150°C)a ID
TA: 70°C 12.5 :20 A
Pulsed Drain Current IDM i 10 i 10
Continuous Source Current (Diode Conduction)" Is 1.6 -1.6
TA = 25°C 2.0
Maximum Power Dissipationa PD W
TA = 70°C 1.3
Operating Junction and Storage Temperature Range Tu, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol N- or P-Channel Unit
Maximum Junction-to-Ambient" RthJA 62.5 'C/W
a. Surface Mounted on FR4 Board,t s 10 sec.
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Si9942DY
Vishay Siliconix
VISHAY
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
Static
VDs = I/ss, ID = 250 0A N-Ch 1.0
Gate Threshold Voltage Vegan) V
VDS = Veg, ID = -250 “A P-Ch -1.0
Gate-Body Leakage ksss Vos = 0 V, VGS = i 20 V i 100 nA
VDS =16 V, VGS = 0 V N-Ch 2
Vros = -16 V, N/ss = 0 V P-Ch -2
Zero Gate Voltage Drain Current bss y1A
VDS=16 V,VGS=OV,TJ=55°C N-Ch 25
Vos=-161/,Vss-- 0V,TJ =55°C P-Ch -25
VDS 2 5V,VGS=10V N-Ch 10
Vros s -5 V, N/ss = -10 V P-Ch -10
On-State Drain Currentb 'D(0n) A
VDS 2 5 V, VGS = 4.5 V N-Ch 2
Vos 5 -5 V, VGs = -4.5 V P-Ch -2
VGS=10V. |D=1.0A N-Ch 0.07 0.125
VGS = -10 V, b =10 A P-Ch 0.12 0.200
Drain-Source On-State Resistanceb rDS(on) Q
VGS = 4.5 V, ID = 0.5 A N-Ch 0.105 0.250
Ves = -4.5 V, ID = 0.5 A P-Ch 0.22 0.350
VDS = 15 V, ID = 3.0 A N-Ch 4.8
Forward Transconductanceb (ht S
VDS = -1 5 V, ID = -3.0 A P-Ch 3.0
Is = 1.25 A, VGS = 0 V N-Ch 0.75 1.2
Diode Forward Voltage' VSD V
IS = -1.25 A, VGS = o v P-Ch -0.8 -1.2
Dynamica
N-Ch 7 25
Total Gate Charge Qg
N-Channel P-Ch 6.7 25
Vos = 10 V, VGS = 10 V, b = 2.3 A N-Ch 0.75
Gate-Source Charge Qgs nC
P-Channel P-Ch 1.3
. Vos=-10V,Vss=-10V,lro=-2.3A N-Ch 1.7
Gate-Drain Charge di
P-Ch 1.6
N-Ch 6 15
Turn-On Delay Time tum)
P-Ch 1O 40
N-Channel N-Ch 10 20
Rise Time tr VDD = 20 V, RL = 20 Q
|Da1A,VGEN=1O\/,RG=6§2 P-Ch 12 40
- N-Ch 17 50
Turn-Off Delay Tlme td(otr) VDD = Cf/ly/e, 20 Q ns
ID a -1 A, VGEN = -10 v, Rs = 6 Q P-Ch 20 90
N-Ch 10 50
Fall Time tt
P-Ch 10 50
N-Ch 45 100
Source-Drain Reverse Recovery Time trr IF = 1.25 A, di/dt = 100 Alps
P-Ch 70 100
a. Guaranteed by design, not subject to production testing.
b. Pulsetest; pulse width 5 300 us, duty cycle s 2%.
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Si9942DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
N-CHANNEL
I’DS(on) - On-Resistance (
VGs — Gate-taSource Voltage (V)
Output Characteristics
VGs=10thru4V
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
VGS = 4.5 V
VGS= 10V
ID - Drain Current (A)
Gate Charge
VDS=10V
- |D=2.3A
- Total Gate Charge (nC)
rDS(on) — On-Resistance( Q)
| D — Drain Current (A)
C — Capacitance (pF)
(Normalized)
Transfer Characteristics
10 l f,
TC = -55''C /
2 25°C
O 1 2 3 4 5
VGS - Gate-to-Source Voltage (V)
Capacitance
C"'"'"'--------- Ciss
200 l "ss.
"s Crss
0 4 8 12 16 20
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
VGS = 10 V
1.6 - ID = 2 A o,,,,,-'''''''"
1.2 v,,-''''
w,,.,-''''''''''"
o 8 r,,..,,,,,,,,---'''''''"
-50 0 50 100 150
T: - Junction Temperature CC)
Document Number: 70130
S-000652-Rev. L, 27-Mar-00
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Si9942DY
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
N-CHANNEL
VGS(th) Variance(V) ls — Source Current (A)
Normalized Effective Transient
Thermal Impedance
Source-Drain Diode Forward Voltage
T J = 150°C
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD - Source-to-Drain Voltage (V)
Threshold Voltage
0.2 "ssss
ID = 250 “A
-00 "ss
-0 2 "ss,,
-0 4 'ss,
-50 0 50 100 150
TJ - Temperature CC)
Duty Cycle = 0.5
Single Pulse
IO-A 10-3 10-2
rDS(on) — On—Resistance( Q )
Power (W)
On-Resistance vs. Gate-to-Source Voltage
4 6 8 1O
VGS - Gate-to-Source Voltage (V)
Single Pulse Power
Square Wave Pulse Duration (sec)
1 10 30
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Notes:
_.L: _
1. Duty Cycle, D = -
2. Per Unit Base = Rth0A = 62.5”C/W
3. TJM - TA = PDMZthAm
4. Surface Mounted
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Document Number: 70130
S-000652-Rev. L, 27-Mar-00
VISHAY
Si9942DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) P-CHANNEL
Output Characteristics
10 I l
/" VGS=1Othru6V
g.] 5 V
0 2 4 6 8 10
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
VGS = 4.5 V
g ,,,,,.W/'
g 0.2 ----'''" Vss = 10V
0 2 4 6 8
ID - Drain Current(A)
Gate Charge
vDs =10 v /
3 8 ID = 2.3 A
's s,,/'''
0 2 4 6 8
Q9 - Total Gate Charge(nC)
r DS(on)- On—Resistance( Q )
| D — Drain Current (A)
C — Capacitance (pF)
(Normalized)
Transfer Characteristics
Tc = -55"C
25°C l/
"sk 125°C
0 1 2 3 4 5 6 7
VGS - Gate-to-Source Voltage (V)
Capacitance
0 5 IO 15 20
Vos - Drain-to-Source Voltage(V)
On-Resistance vs. Junction Temperature
1.6 - V = 10V
Ioefzs A w.,,,,,"'''''''"
1 2 /1/
",,,w'''''''''
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
Document Number: 70130
S-000652-Rev. L, 27-Mar-00
www.vishay.com . FaxBack 408-970-5600
Si9942DY
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) P-CHANNEL
20 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
- o A 0.8 - I = 2.3A
A 10 T J =150 c d D
g fs). 0.6
08) , 0.4
- b' 0.2 \
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 2 4 6 8 IO
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
o 8 Threshold Voltage Single Pulse Power
ID = 250 0A l
0.4 20
0.2 ",,e''''
VGS(th) Variance (V)
o,,,''''' 10 "ss,
-0.2 ' N,
" 5 ''s.
-0.4 0
-50 -25 0 25 50 75 100 125 150
0.010 0.100 1 10 30
TJ - Temperature CC)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
E g 0.2
t I? Notes:
.2 & T
g g 0.1 PDM
E E 0.1 l
RD g 0 05
tD tD . -1 11 _
(i' fE t2 1
g 0.02 1. Duty Cycle, D = T D
Z 2. Per Unit Base = RNA = 62.5 CNV
. 3, Torg - TA = PDMZthJA")
Single Pulse 4. Surface Mounted
Ity-A 10.3 10-2 IO-l 1 10 30
Square Wave Pulse Duration (sec)
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