SI9939DY ,N/P-Channel 30-V (D-S) PairSi9939DYVishay SiliconixComplimentary 30-V (D-S) MOSFET
SI9939DY
N/P-Channel 30-V (D-S) Pair
VISHAY
Si9939DY
Vishay Siliconix
Complimentary 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
0.05@Vss= 10V $3.5
N-Channel 30 0.07 @ VGS = 6 V l 3
0.08 @ VGS = 4.5 V ce2.5
0.10@Vss=-101/ ce3.5
P-Channel -30 0.12 @ VGS = -RN l 3
0.16@VGs=-A.5V $2.5
D1 D1 Se
SI 02 D2
Top View
N-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol N-Channel P-Channel Unit
Drain-Source Voltage Vos 30 -30 V
Gate-Source Voltage VGS d: 20 i 20
TA=25°C i3.5 i3.5
Continuous Drain Current (To = 150oC)a ID
TA-- 70°C i2.8 i2.8 A
Pulsed Drain Current IDM cl: 20 izo
Continuous Source Current (Diode Conduction)a ls 1.7 -1.7
TA = 25°C 2.0
Maximum Power Dissipationa PD W
TA = 70°C 1.3
Operating Junction and Storage Temperature Range To, Tstg -55 to 150 "'C
THERMAL RESISTANCE RATINGS
Parameter Symbol N- or P- Channel Unit
Maximum Junction-to-Ambient" RmJA 62.5 "CAN
a. Surface Mounted on FR4 Board, t s 10 sec.
Document Number: 70146
S-00652-Reu G, 27-Mar-00
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Si9939DY
VISHAY
Vishay Siliconix
SPECIFICATIONS tTa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
Static
V =V ,I =250 N-Ch 1.0
Gate Threshold Voltage VGS(th) DS GS D pa/N V
Vros = Kas, ID = -250 WA P-Ch -1.0
Gate-Body Leakage less VDS = 0 V, VGS = l 20 V l 100 nA
Vos = 24 V, VGS = 0 V N-Ch 1
' VDS = -24 V, VGS = 0 V P-Ch -1
Zero Gate Voltage Drain Current loss “A
Vros = 15 V, VGS = 0 V, To = 70°C N-Ch 5
VDs=-15V,VGs=0V,TJ=700C P-Ch -5
Vos 2 5V,VGs= 10V N-Ch 20
V s -5 V, V = -10 V P-Ch -20
On-State Drain Currentb low”) DS GS A
Vos 2 5 V, VGS = 4.5 V N-Ch 3.5
1/ros S -5 V, VGS = -4.5 V P-Ch -3.5
VGS = 10 V, ID = 3.5 A N-Ch 0.04 0.05
Vss=-fOV, ID-- 3.5A P-Ch 0.074 0.10
VGS = 6 V, ID = 3 A N-Ch 0.045 0.07
Drain-Source On-State Resistanceb rDS(on) C2
VGS=-6 V, ID = 3A P-Ch 0.090 0.12
VGS = 4.5 V, ID = 2.5 A N-Ch 0.054 0.08
Vss=-4.5V,Iro=2A P-Ch 0.115 0.16
VDS=15V,ID=3.5A N-Ch 9
Forward Transconductancep 9ts S
VDs = -15 V, ID = -3.5 A P-Ch 6
IS=1.7A,VGS= 0v mm 0.75 1.2
Diode Forward Voltageb VSD V
Is = -1.7 A, VGS = 0 V P-Ch -0.75 -1.2
Dynamica
N-Ch 14 35
Total Gate Charge Q9
N-Channel P-Ch 14.5 35
Gat S Ch Q VDS= 10V, VGs=10V,ID=3.5A N-Ch 1.9 C
a e- ource arge gs P-Channel P-Ch 2.7 n
VDS = -10 v, VGS = -10V
ID = -3.5 A N-Ch 2.8
Gate-Drain Charge di
P-Ch 3.5
T O D I Ti t N-Ch 10 30
urn- n e a Ime
y m") P-Ch 11 30
N-Channel N-Ch 10 40
Rise Time tr VDD =15 V, RL -- 15 Q
lD--=1A,VGEN=10V,RG=6Q P-Ch 11 4O
- N-Ch 26 50
Turn-Off Delay Time td(off) VDD = If/T/lt, 15 C2 P Ch ns
Iroc-_/sEN=-10V,Rs--6Q - 30 50
N-Ch 10 50
Fall Time tt
P-Ch 12 50
N-Ch 60 120
Source-Drain Reverse Recovery Time trr IF = 3.5 A, di/dt = 100 Alps
P-Ch 40 100
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width s 300 us, duty cycle S 2%.
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Document Number: 70146
S-00652-Rev. G, 27-Mar-00
VISHAY Si9939DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) N-CHANNEL
Output Characteristics Transfer Characteristics
20 I I I 20
VGS =10thru 5 V
<3 ii:.]
E 12 E 12
E 8 E 8
I I TC = 125°C
f 4 3 v f 4 25'0C I
2, 1 V -55oC
0 2 4 6 8 10 0 1 2 3 4 5
VDs - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.20 1400
A 0.16
v c 1000
_-l-',' 0.12 g 800
6 0.08 N/ss = 4.5 v , 8 600
I ,,.,.,.,,,V 6 v I
"ii' . o 400
3 0.04
10 V 200
0 6 12 18 24 30 0 6 12 18 24 30
ID - Drain Current (A) Vos - Drain-to-Source Voltage(V)
10 Gate Charge 2 O On-Resistance vs. Junction Temperature
/''" VGS = 10 V
ID = 3.5 A
g 8 / 1 6 /
oils.' 168:2? / E "-'"'"'"
- D = . a:
j,' 6 l 8 G" 1.2 l
© 9 a: /
Lo L, .5 "we'''
U.) c; g "e''''
Sl 4 C o 0.8
I; Cl ?5
j,, 2 8 0.4
0 3 6 9 12 15 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
Document Number: 70146 www.vishay.com . FaxBack 408-970-5600
S-00652-Reu G, 27-Mar-00
Si9939DY
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) N-CHANNEL
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
T J = 150°C
A E 0.3
g k';' 0.2
o) g 0.1 ID = 3.5 A
'r--...,
0 0.4 0.8 1.2 1.6 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.4 40
(h2 32
A ID = 250 mA l
ty -0.0
g "s, g N
g -0 2 E
I "ss, O N
g." a 16
ii," -0 4 'N. N
> "N t
-0 6 "ssc, 8
-0.8 0
-50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 30
TJ - Temperature CC) Tlme (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
_.L: _
1. Duty Cycle, D = T1
2. Per Unit Base = RNA = 62.5°CNV
3. Torn - TA = PDMZmJA“)
4. Surface Mounted
Normalized Effective Transient
Thermal Impedance
Single Pulse
10-4 10r3 10-2 10-1 1 IO 30
Square Wave Pulse Duration (sec)
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4 S-00652-Rev. G, 27-Mar-00
VISHAY
Si9939DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
I D — Drain Current (A)
rDS(on) — On-Resistance( Q )
VGs — Gate-to-Source Voltage (V)
Output Characteristics
20 / l l
/// VGS=10thru6V
/ I 3V
o 2 4 6 8 10
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0 4 8 12 16 20
ID - Drain Current (A)
Gate Charge
VGS= 10 V
ID=3.5A
2 v/i'''
0 3 6 9 12 15
Q9 - Total Gate Charge (nC)
r DS(on)- On-Resistance( Q)
| D — Drain Current (A)
C — Capacitance (pF)
(Normalized)
P-CHAN N EL
Transfer Characteristics
1 2 3 4 5 6
VGS - Gate-to-Source Voltage (V)
Capacitance
"-..-,
Ns, Ciss
6 12 18 24 30
Vos - Drain-to-Source Voltage(V)
On-Resistance vs. Junction Temperature
VGS = 10 V
ID = 3.5 A
1.6 m..,.,,,-,,--"
o,,,,,,,,,-"''''''"
0.8 w,,,,,.-''''''
---'''"
-50 0 50 100 150
TJ - Junction Temperature (°C)
Document Number: 70146
S-00652-Reu G, 27-Mar-00
www.vishay.com . FaxBack 408-970-5600
Si9939DY
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
P-CHANNEL
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
:: T J = 150°C G"
'l-d g 0.3
g L; ID = 3.5 A
can 8 0.2
g 0.1 "'''m"......_,
0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.8 40
(h6 o,,,,,,,,?''" 32 )
E 0.4 "t
tD " 24
E ID = 250 yA o,,,,,,-'''''' g N
E 0.2 a
te.. o,,-''' a 16
8 0.0 N
> ',,w'''" i
-0.2 /
-0.4 O
-50 0 50 100 150 0.01 0.1 1 10 30
TJ - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Single Pulse
1 o-3 1 0-2 10-1
Square Wave Pulse Duration (sec)
_.L: _
1. Duty Cycle, D =
2. Per Unit Base = RNA = 62.5°CNV
3. Torn - TA = PDMZmJA“)
4. Surface Mounted
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Document Number: 70146
S-00652-Rev. G, 27-Mar-00
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