Partno |
Mfg |
Dc |
Qty |
Available | Descript |
SI9926CDY-T1-E3 |
VISHAY|Vishay |
N/a |
42500 |
|
Dual N-Channel 20-V (D-S) MOSFET |
SI9926DY VISHAY,General DescriptionThese N-Channel 2.5V specified MOSFETs use • 6.5 A, 20 V. R = 0.030 Ω @ V = 4.5 VDS(ON) GSFairchild Semiconductor’s advanced Power ..
SI9926DY SILICONIX,General DescriptionThese N-Channel 2.5V specified MOSFETs use • 6.5 A, 20 V. R = 0.030 Ω @ V = 4.5 VDS(ON) GSFairchild Semiconductor’s advanced Power ..
SI9926DY SILI,Applications• Low gate charge• Battery protection• Load switch• Power managementD15 4D1D2Q16 3D27 2Q2G18 1S1SO-8G2S2oAbsolute Maximum Ratings T ..
SI9926DY SI,Applications• Low gate charge• Battery protection• Load switch• Power managementD15 4D1D2Q16 3D27 2Q2G18 1S1SO-8G2S2oAbsolute Maximum Ratings T ..
SI9926DY KEXIN,applications with a wide range of gate drive voltage• Optimized for use in battery protection circuits(2.5V – 10V).• ±10 V allows for wide operating ..
SI9926CDY-T1-E3 , Dual N-Channel 20-V (D-S) MOSFET
SI9926DY ,Dual N-Channel 2.5V Specified PowerTrench MOSFETSi9926DYJanuary 2001Si9926DY Dual N-Channel 2.5V Specified PowerTrench MOSFET
SI9928DY ,N/P-Channel 20-V (D-S) Pair FaxBack 408-970-5600S-00652—Rev. G, 27-Mar-001Si9928DYVishay Siliconix