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SI9926ADYVISHAYN/a4500avaiDual N-Channel 2.5-V (G-S) MOSFET


SI9926ADY ,Dual N-Channel 2.5-V (G-S) MOSFET S-04055—Rev. A, 25-Jun-01 1Si9926ADYNew ProductVishay Siliconix      ..
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SI9926ADY
Dual N-Channel 2.5-V (G-S) MOSFET
VISHAY
New Product
Si9926ADY
Vishay Siliconix
Dual N-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
20 0.030 @ l/ss = 4.5 v 6
0.040 @ N/ss = 2.5 v 5
Top Nflew
G,,,-]
N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage Vros
Gate-Source Voltage VGS 12
TA = 25°C 6 4.8
Continuous Drain Current (TJ = 150°C)a ID
TA = 70°C 5 3.8
Pulsed Drain Current IDM
Continuous Source Current (Diode Conduction)" Is 1.7 1.0
TA=25°C 2.0 1.25
Maximum Power Dissipation" PD W
TA = 70''C 1.3 0.8
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 50 62.5
Ma im J ction-to-A bie ta R
XI um un I m I n Steady State WA 80 100 ''CA/V
Maximum Junction-to-Foot (Drain) Steady State Rm}: 30 40
a. Surface Mounted on 1" x l" FR4 Board.
Document Number: 71633 wwwvishay.com
S-04055-Rev. A, 25-Jun-01
Vishay SiliConix New Product
SPECIFICATIONS ITa = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDs = Kas, ID = 250 MA 0.6 V
Gate-Body Leakage less VDs = 0 V, VGS = l 12 V d: 100 nA
VDs=20V,VGs=0V 1
Zero Gate Voltage Drain Current IDSS WA
VDS=20V,VGS=0V,TJ=55°C 25
On-State Drain Currenta low”) Vos 2 5 V, VGS = 4.5 V 20 A
VGS = 4.5 V, '0 = 6A 0.023 0.030
Drain-Source On-State Resistancea rDs(on) Q
V68 = 2.5 V, ID = 5 A 0.030 0.040
Forward Transconductancea 9ts Vos = 15 V, ID = 6 A 22 S
Diode Forward Voltage" I/sro Is = 1.7 A, Veg = 0 V 0.7 1.2
Dynamicb
Total Gate Charge % 13 20
Gate-Source Charge Qgs Vos = 15 V, VGS = 4.5 V, ID = 6 A 3 nC
Gate-Drain Charge di 3.3
Turn-On Delay Time td(on) 22 35
Rise Time tr VDD = 15 V, RL = 15 g 40 60
Turn-Off Delay Time td(ott) ko E 1 A, VGEN = 4.5 V, Rs = 6 Q 50 75 ns
Fall Tlme k 20 30
Source-Drain Reverse Recovery Time trr IF = 1.7 A, di/dt = 100 Alps 40 80
a. Pulsetest; pulse width 5 300 us, duty cycle 3 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
30 1 I 30
VGS = 5 thru 3 V J,
24 24 I
'ii:'.' Ct
E 18 E 18
I',-', 12 - (r', 12
t5 2 V c'5
I I Tc = 125°C
- 6 - 6 25°C
_ 1.5 V l -55''C
0 l O _
0 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71633
2 S-04055-Reu A, 25-Jun-01
VISHAY
New Product
Si9926ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
Cl 0.06
'3 / g
CD 0.04 7 VGS = 2.5 V 15
5 _...---" §
' VGS - 4.5 v I
tif 0.02
0 6 12 18 24 30
ID - Drain Current (A)
Gate Charge
1/Ds=10V /
3.ts-ID=6A /'"
2.7 1’
VGS — Gate-to-Source Voltage (V)
rDS(on)— On-Resistance( Q )
(Normalized)
0 3 6 9 12 15
% - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
T: = 150°C
| s — Source Current (A)
rDS(on)— On—Resistance ( Q )
O 0.2 0.4 0.6 0.8 1.0 1.2
V30 - Source-to-Drain Voltage (V)
Capacitance
0 4 8 12 16 20
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6 i Gs=4-5V
lro=6A
0 8 s,,,-''''''''
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
Document Number: 71633
S-04055-Rev. A, 25-Jun-01
wwwvishay.com
Si9926ADY VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power
0.4 l l 100
ID = 250 “A
0.2 "s, 80
s "s, \
8 -0.0 t 60 N
T-, a N
E: I 40 N
E -0.2 'c
8 's, l
> "s,,, N,
-0.4 \ 20 x
's, 'ss,
"ss...
-0.6 0
-50 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10
To - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
li' Duty Cycle = 0.5
I' a 0.2
lit ' th1 T
u L 0.1 PDM
Iz'jz' l
g -21 t2 t
a 1. Duty Cycle, D = T;
2. Per Unit Base = RNA = 80°CIW
V 3. TJM - TA = PDMZthAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
li' Duty Cycle = 0.5
I' a 0.2
if',' g
tt a 0.1
Single Pulse
1o-4 10-3 10-2 IO-I 1
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71633
S-04055-Reu A, 25-Jun-01
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