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SI9910DJ-SI9910DY-SI9910DY-T1
Adaptive Power MOSFET Driver1
Si9910
Vishay Siliconix
Adaptive Power MOSFET Driver1FEATURES dv/dt and di/dt Control Undervoltage Protection Short-Circuit Protection trr Shoot-Through Current Limiting Low Quiescent Current CMOS Compatible Inputs Compatible with Wide Range of MOSFET Devices Bootstrap and Charge Pump Compatible(High-Side Drive)
DESCRIPTION
The Si9910 Power MOSFET driver provides optimized gatedrive signals, protection circuitry and logic level interface. Very
low quiescent current is provided by a CMOS buffer and ahigh-current emitter-follower output stage. This efficiency
allows operation in high-voltage bridge applications with“bootstrap” or “charge-pump” floating power supplytechniques.
The non-inverting output configuration minimizes current
drain for an n-channel “on” state. The logic input is internallydiode clamped to allow simple pull-down in high-side drives.
Fault protection circuitry senses an undervoltage or outputshort-circuit condition and disables the power MOSFET.
Addition of one external resistor limits maximum di/dt of theexternal Power MOSFET. A fast feedback circuit may be used
to limit shoot-through current during trr (diode reverse recoverytime) in a bridge configuration.
The Si9910 is available in 8-pin plastic DIP and SOIC
packages, and are specified over the industrial, D suffix (−40to 85�C) temperature range. In SOIC-8 packaging bothstandard and lead (Pb)-free options are available.
VDD
VDSINPUT
