SI9435DY ,30-V (D-S) SingleSi9435DYVishay SiliconixP-Channel 30-V (D-S) MOSFET
SI9435DY
30-V (D-S) Single
Si9435DY
VISHAY
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (C2) ID (A)
0.055@Vss=-10V i5.1
-30 0.07 @ veg = 43 v i4.6
0.105@VGs=-45V i3.6
S0-8 TU
Top View
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage V03 -30
Gate-Source Voltage Was $20
TA = 25°C d: 5.1
Continuous Drain Current (TJ = 150l)a ID
TA = 70°C i4.6
Pulsed Drain Current IDM $20
Continuous Source Current (Diode Conduction)a ls -2f5
TA = 250C 2.5
Maximum Power Dissipationa PD W
TA = 70°C 1.6
Operating Junction and Storage Temperature Range Tu, Tstg -55 to 150 "C
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Maximum Junction-to-Ambient" RthJA 50 'C/W
a. Surface Mounted on FR4 Board,t s 10 sec.
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Document Number: 70126 www.vishay.com . FaxBack 408-970-5600
S-00652-Reu J, 27-Mar-00 1
Si9435DY
Vishay Siliconix
VISHAY
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
Static
Gate Threshold Voltage VSS(th) VDs = VGS, ID = -250 “A -1.0 V
Gate-Body Leakage less Vos = 0 V, VGS = 120 V i 100 nA
VDS = -24 V, VGS = 0 v -1
Zero Gate Voltage Drain Current loss uA
Vros=-15V,VGs--0V,Tu--701 -5
On-State Drain Currentb IBM) VDS S -10 V, VGS = -10 V -20 A
Vros s -5 V,N/GS=-A.5N/ -5
Ves = -10 V, ID = -46 A (h037 0.055
Drain-Source On-State Resistanceb rDS(on) VGs = -6 V, ID = -4.1 A 0.047 0.07 Q
l/cs = -4.5 V, ID = -2.0 A 0.060 0.105
Forward Transconductanceb Ws I/os = -15 V, ID = -A.6 A 9.0 S
Diode Fon/vard Voltageb VSD Is = -2.6 A, VGS = 0 V A).88 -1.2
Dynamica
Total Gate Charge Q9 27 4O
Gate-Source Charge Qgs VDS = -15 V, VGS = -10 V, ID = -46 A 4 nC
Gate-Drain Charge di 6.3
Turn-On Delay Time td(on) 14 30
Rise Tlme tr VDD = _15 V, RL = 15 Q 13 60
Turn-Ott Delay Time 1mm '0 E -1 A, VGEN = -10 v, Rs = 6 Q 58 120 ns
Fall Time tf 21 100
Source-Drain Reverse Recovery Time trr IF = 2.6 A, di/dt = 100 Alps 65 100
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width 5 300 us, duty cycle S 2%.
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Document Number: 70126
S-00652-Rev. J, 27-Mar-00
Si9435DY
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
20 l I 20
sz = 10, 9, 8, 7, 6, 5V
iir" 4 v ii:.]
E 12 E 12
"E 8 E 8
I I Tc = 125°C
Cl Cl l I
- 4 - 4 25 C
"s -55''C
0 2 4 6 8 10 0 1 2 3 4 5
VDs - Drain-to-Source Voltage(V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.16 3000
Cl 0.12
i,; Lg 2000
17; / E
o 0.08 VGS = 4.5 V '5 1500 Ciss
5 ...w''' g. 's.. a--..-,
E" O oss
s 0.04
8 "ss-dc.'.'.'',
_ 10 v 500 \Crss
0 4 8 12 16 20 O 4 8 12 16 20
ID - Drain Current (A) l/ns - Drain-to-Source Voltage(V)
10 Gate Charge 2 0 On-Resistance vs. Junction Temperature
I l / . I I
Vros=15V VGs=10V
S |D=4.6A ID=4.6A
8 A 1.6 4
8, " Cl s,,,,,-''''"
i-'-,'. / I r.,,,.--'"
> 6 g a 1.2 4
g " E S ",--"'"'''"
8 (ll 'rT,
T “F g ',.--""
s. 4 C 2° 0.8 /
d, / C) v
w 2 f? 0.4
0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) Tu - Junction Temperature (°C)
Document Number: 70126 www.vishay.com . FaxBack 408-970-5600
S-00652-Reu J, 27-Mar-00 3
Si9435DY
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage
TJ=150°c
Is — Source Current(A)
0 0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
lro=4.6A
rDS(on) — On-Resistance( Q)
1.2 1.4 0 2 4 6 8 10
Was - Gate-to-Source Voltage (V)
70 Single Pulse Power
ID=250yA
VGsuh) Variance (V)
Power (W)
-50 -25 0 25 50 75 100
T: - Temperature (°C)
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Single Pulse
10-4 10-3
125 150 0.01 0.1 1 10 30
Tune (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Notes:
1. Duty Cycle, D = T,
2. Per Unit Base = RmJA = 50°CNV
3. TJM - TA = ProuZtruA(0
4. Surface Mounted
10-2 10-1 1
Square Wave Pulse Duration (sec)
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Document Number: 70126
S-00652-Rev. J, 27-Mar-00
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