SI9426DY ,Single N-Channel, 2.5V Specified MOSFETS-03950—Rev. E, 26-May-031Si9426DYVishay SiliconixSPECIFICATIONS (T = 25C UNLESS OTHERWISE NOTED) ..
SI9428DY ,N-Channel 2.5-V (G-S) MOSFETS-03950—Rev. C, 26-May-031Si9428DYVishay Siliconix MOSFET SPECIFICATIONS (T =25C UNLESS OTHERWISE ..
SI9430DY ,P-Channel 20-V (D-S) MOSFETSi9430DYVishay SiliconixP-Channel 20-V (D-S) MOSFET
SI9426DY
Single N-Channel, 2.5V Specified MOSFET
ic,fiF,Ai, Si9426DY
Vishay Siliconix
N-Channel 2.5-v (G-S) MOSFET
osNsis
PRODUCT SUMMARY t..tr'
VDs (V) rDS(on) (Q) ID (A)
0.0135@Vss=4.5V IO
0.0160@VGS= 2.5V 9.3
Top Jew
Ordering Information: Si9426DY
Si9426DY-TI (with Tape and Reel) N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage V08 20
Gate-Source Voltage V63 cl: 8
TA = 25°C 10
Continuous Drain Current (T J = 150°C)a ID
TA = 70°C 8
Pulsed Drain Current IBM 30
Continuous Source Current (Diode Conduction)" ls 2.3
TA = 25°C 2.5
Maximum Power Dissipation" PD W
TA = 70°C 1.6
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Maximum Junction-to-Ambienta RmJA 50 °C/W
a. Surface Mounted on FR4 Board, t s 10 sec.
Document Number: 70160 www.vishay.com
S-03950-Rev. E, 26-May-03 1
Si9426DY
Vishay Siliconix
VISHAY
SPECIFICATIONS ITa = 25° c UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
Static
Gate Threshold Voltage VSS(th) Vos = VGS, ID = 250 pA 0.6 V
Gate-Body Leakage less VDS = 0 V, VGs = l 8 V d: 100 nA
VDs=20V,VGs=0V 1
Zero Gate Voltage Drain Current IDSS WA
VDS=20V,VGS=0V,TJ=55°C 5
On-State Drain Currentb IBM) VDS 2 5 V, VGS = 4.5 V 30 A
VGs = 4.5 V, b = 10 A 0.0098 0.0135
Drain-Source On-State Resistanceb rDS(on) Q
VGS=2.5V, ID=8A 0.011 0.0160
Forward Transconductanceb gfs VDS = 10 V, ID = 10 A 57 S
Diode Forward Voltageb VSD ls = 2.3 A, Vss = O V 0.71 1.2
Dynamica
Total Gate Charge Qg 46.5 80
Gate-Source Charge Qgs Vos = 6 V, VGS = 4.5 V, ID = 10 A 5.5 nC
Gate-Drain Charge di 13.5
Gate Resistance R9 1 3.9 Q
Turn-On Delay Time tdwn) 50 100
Rise Time tr VDD = 6 V, RL = 6 Q 110 200
Turn-Off Delay Time tdmm ID _ 1 A, VGEN = 4.5 V, Re = 6 Q 150 300 ns
Fall Time tf 55 100
Source-Drain Reverse Recovery Time trr IF = 2.3 A, di/dt = 100 Alps 59 100
a. Guaranteed by design, not subject to production testing.
b. Pulsetest; pulse width 5 300 MS. duty cycle s 2%.
www.vishay.com Document Number: 70160
2 S-03950-Rev. E, 26-May-03
ic,fiF,Ai, Si9426DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
30 _ _ I 30
VGS = 5, 4.5, 4, 3.5, 3, 2.5, 2 v
g.] C4
E 18 E 18
E 12 E 12
'? 0. Tc = 125°C
0 1.5 V D l
_ 6 _ 6 ,
25°C /
1 V -55°C
0 1 2 3 4 5 0.0 0.5 1.0 IS 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
0.020 6000
A 0.016 5000
ii' - Is, 4000
o5. 0012 7 VGS - 2.5 V 8
fr,' F,
g E: 3000
I - o.
8 0.008 VGS - 4.5 V - 8
L ' 2000
f? 0.004 1000
0.000 0
0 6 12 18 24 30 O 2 4 6 8 10 12
ID - Drain Current (A) Vos - Drain-to-Source Voltage (V)
Gate Charge On-Resistance vs. Junction Temperature
5 " 1.8
S VDs=6V / 1.6-VGS=4.5V A
V 4-ID--10A " A b=10A a,,,,,,,?
2 I; 1 4
it 3 5 G" ,,,i''"
9 Es' :3 o,,,,,,,,-'''''
J) rlt' E 1.2 s,,,,,,,.''''"
"l,' 2 o E v,.,'"''
lif I., 1.0
I 1 if -
(D '- 0.8
0 10 20 30 4O 50 60 -50 0 50 100 150
O9 - Total Gate Charge (nC) To - Junction Temperature CC)
Document Number: 70160 www.vishay.com
S-03950-Rev. E, 26-May-03 3
Si9426DY
Vishay Siliconix
VISHAY
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
To = 150°C a (h04
g !si. 0.03
0 17,'
(,8) 8 0.02
I L ID = 10 A
_ .09) 0.01 "ss,,,,,,
To = 25°C
0 0.2 0.4 0.6 0.8 1.0 0 2 4 6 8
I/so - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.6 100
ID = 250 pt/k )
-0.0 "s.
-0.2 "ss.
VGS(th) Varlance (V)
Power (W)
"s, i.
-0.4 "ttr 20 's
-0.6 0
-50 0 50 100 150 0.01 0.1 1 10 100
To - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
0.1 Pf”
__L: _
1. Duty Cycle, D = T
2. Per Unit Base = RthJA = 50°C/W
Normalized Effective Transient
Thermal Impedance
3. TJM - TA = ProMZthoA(t)
4. Surface Mounted
Single Pulse
10-4 10-3 10-2 10-1 1 10 30
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 70160
4 S-03950-Rev. E, 26-May-03
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