SI9410DY ,Single N-Channel Enhancement Mode MOSFETSi9410DYSeptember 1999Si9410DY*Single N-Channel Enhancement Mode MOSFET
SI9420DY ,50-V (D-S) Single
SI9422DY ,N-Channel Reduced Qg, Fast Switching MOSFET FaxBack 408-970-5600S-59610—Rev. D, 23-Nov-982-1Si9422DYVishay Siliconix
SI9410DY
Single N-Channel Enhancement Mode MOSFET
Si9410DY September 1999 Si9410DY* Single N-Channel Enhancement Mode MOSFET General Description Features This N-Channel Enhancement Mode MOSFET is � 7.0 A, 30 V. R = 0.030 Ω @ V = 10 V DS(ON) GS produced using Fairchild Semiconductor’s advance R = 0.050 Ω @ V = 4.5 V process that has been especially tailored to minimize DS(ON) GS on-state resistance and yet maintain superior switching performance. � Low gate charge. This device is well suited for low voltage and battery � Fast switching speed. powered applications where low in-line power loss and � High power and current handling capability. fast switching are required. Applications � Battery switch � Load switch � Motor controls SO-8 L$EVROXWH�0D[LPXP�5DWLQJV��7$ 6\PERO 3DUDPHWHU 5DWLQJV 8QLWV 9H9 9H96± ,$’ GH 3QLVZRH3:’ 7W-*°& 7KHUPDO�&KDUDFWHULVWLFV EPD°5θ D5° θ 3DFNDJH�2XWOLQHV�DQG�2UGHULQJ�,QIRUPDWLRQ ’HYLFH�0DUNLQJ ’HYLFH 5HHO�6L]H 7DSH�:LGWK 4XDQWLW\ ,6P ������GXIUEMHFDQJHZUL� 1999 Si9410DY Rev. C DQ’LHPDQDFWXULQJVRXVXFHWWRFKLWKRXWSRUQRWLILFDWLRQ XQLWVP¶¶’< -& &:1RWH7KHUPO5HVLVWDQFH-XQFWLRQWR&DVH -$ &:1RWHD7KHUPO5HVLVWDQFH-XQFWLRQWR$LHQW 67 WR2SHUDWLQJDQG6RUDJH-XQFWLRQ7HPSHUDWXUH5DQJH7 1RWHF 1RWHE U’LVSDWLRQIRU6LQJOH2SHUDWLR 1RWHD 3XOV 1RWHD&RQWLQXRXV’UDLQ&XUUHQW *6 *DWH6RXUF9ROWDJH ’66 ’UDLQ6RXUF9ROWDJH &XQO HVVRWKHUZVHQRWHG
