SI9407AEY ,50-V (D-S) Single FaxBack 408-970-5600S-99445—Rev. C, 29-Nov-992-1Si9407AEYVishay Siliconix
SI9407AEY
50-V (D-S) Single
VISHAY
Si9407AEY
Vishay Siliconix
P-Channel 60-V (D-S), 175°C MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
0.120@VGs=-10V +3.5
0.15@VGs=-A.5V $31
Top View
21%}Hm
SIILNJEE
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Limit Unit
Drain-Source Voltage Vros -60
Gate-Source Voltage VGS l 20
TA = 25°C cl: 3.5
Continuous Drain Current (TJ = 150°C)a ID
TA = 70°C d: 3.0
Pulsed Drain Current IDM i 30
Continuous Source Current (Diode Conduction)" ls -2.5
TA = 25°C 3.0
Maximum Power Dissipation" PD W
TA = 70°C 2.1
Operating Junction and Storage Temperature Range T J, Tstg -55 to 175 't
THERMAL RESISTANCE RATINGS
Parameter Symbol Limit Unit
Maximum Junction-to-Ambient" RthSA 50 °C/W
a. Surface Mounted on FR4 Board, t s 10 sec.
Document Number: 70742
S-99445-Rev. C, 29-Nov-99
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Si9407AEY
Vishay Siliconix
VISHAY
SPECIFICATIONS tTa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typa Max Unit
Static
Gate Threshold Voltage Vegan) Vros = VGS, ID = -250 MA -1 V
Gate-Body Leakage less Vros = 0 V, VGS = l 20 V i 100 nA
Zero Gate Voltage Drain Current ‘Dss VDS = -60 V, VGS = 0 V -1 “A
Vros=--60V,Vss=0V,To=55l -10
On-State Drain Currentb loam) V93 s -5 V, VGS = -10 V -20 A
Drain-Source On-State Resistanceb roman) VGS = -10 V, ID = 3.5 A 0.120 Q
VGs=-4.51/,ID=3.1A 0.150
Forward Transconductanceb gfs VDs = -15 V, ID = -3.5 A 8 S
Diode Forward Voltageb VSD ls = -2.5 A, VGS = 0 V -1.2
Dynamica
Total Gate Charge Q9 18 30
Gate-Source Charge Qgs VDS = -30 V, VGS = -1 0 V, ID = -3.5 A 5 nC
Gate-Drain Charge di 2
Turn-On Delay Time Mon) 8 15
Rise Tlme tr VDD = -30 V, RL = 30 Q 10 20
Turn-Off Delay Time um) '0 E -1 A, VGEN = -10 V, Rs = 6 Q 35 50 ns
Fall Time tf 12 25
Source-Drain Reverse Recovery Time trr IF = -2.5 A, di/dt = 100 Alps 70 100
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width s 300 us. duty cycle s 2%.
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Document Number: 70742
S-99445-Rev. C, 29-Nov-99
VISHAY
Si9407AEY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
30 I I I
VGs=10,9,8,7V A,,',',',',''''''';
25 l / 5 v
"e-"'''''"
2 20 g) /
5 ',,,,p'''''"
it 15 /
CI 10 y If
o ii,',,''''''""
5 / 2 V 3 V -
0 1 2 3 4 5
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
v 0.15
S'. Was = 4.5 v w,,.,,,,,,,"
ttt _...,,,,,,.--'"
c': 0 10 - VGS = 10 V
O w..--""'"
f? 0.05
0 5 10 15 20 25 30
ID - Drain Current (A)
Gate Charge
Vos = 30 V
g 8 - ID = 3.5 A "
s) 4 /
0 4 8 12 16 20
Q9 - Total Gate Charge (nC)
I’DS(on)— On-Resistance ( Q )
| D — Drain Current (A)
C — Capacitance (pF)
(Normalized)
Transfer Characteristics
515:1”
25°C //l
// 150oC
1 2 3 4 5 6
N/ss - Gate-to-Source Voltage (V)
Capacitance
_ Cass
Crss "''''ss.,..o.._,
10 20 30 40 50 60
Vros - Drain-to-Source Voltage(V)
On-Resistance vs. Junction Temperature
VGS=10V ',,,,,w'''''
lro=3SA
",-'''"
-25 o 25 50 75 100125150175
TJ - Junction Temperature CC)
Document Number: 70742
S-99445-Rev. C, 29-Nov-99
www.vishay.com . FaxBack 408-970-5600
Si9407AEY
VISHAY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
30 0.20
A E 0.15
i,'-f: 10 G"
5 .IrLa' \ b = 3.5 A
o 8 o 10
5 E Ns
_ a) 0.05
0 0.00
0.0 0.2 0.4 0.6 0.8 1_0 1.2 1.4 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power
0.8 50
S" 0.4 / N,
8 I = 250 " " 30 \
c D w''' g ,
g o 2 N
Iii" ',,,,p''''" t 20
0 0.0 "ss,
-0.2 “n.
-0.4 0
-50 -25 0 25 50 75 100 125 150 175 0.01 0.1 1 10
TJ - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Single Pulse
IO-A 10-3 10-2 10-1
Square Wave Pulse Duration (sec)
Notes:
1. Duty Cycle, D = T
2. Per Unit Base = RthJA = 50°CNV
3. TJM - TA = PDMZthJAm
4. Surface Mounted
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Document Number: 70742
S-99445-Rev. C, 29-Nov-99
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