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SI7943DP
P-Channel 30-V (D-S) MOSFET
VISHAY
Si7943DP
New Product Vishay Siliconix
Dual P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (Q) ID (A)
0.025 @ I/ss = -10 v -9.4
-30 0.030 @ Vss = -4.5 v -66
0.045 @ VGS = -2.5 v -7.0
PowerPAK"' 80-8
Bottom Ihew
FEATURES
q TrenchFET© Power MOSFET
q New Low Thermal Resistance PowerPAK"'
Package with Low 1.07-mm Profile
APPLICATIONS
q 1-2 Cell Li-Ion Battery Switch
q Bus Load Switch for Notebook/Desktop Computers
G1 ''T G2 ''T
P-Channel MOSFET P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS -30
Gate-Source Voltage N/ss i 12
TA = 25°C -9.4 -60
Continuous Drain Current (TJ = 150°C)3 ID
TA = 70°C -7 5 -4.8 A
Pulsed Drain Current IBM -30
continuous Source Current (Diode Conduction)" ls -2.9 -1.2
TA = 25°C 3.5 1.4
Maximum Power Dissipation" PD W
TA = 70°C 2.2 0.9
Operating Junction and Storage Temperature Range T J, Tsta -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 26 35
Maximum Junction-to-Ambienta RNA
Steady State 60 85 “CM
Maximum Junction-to-Case (Drain) Steady State RthJc 2.2 2.7
a. Surface Mounted on 1" x l" FR4 Board.
Document Number: 71629 www.vishay.com
S-04438-Rev. B, 13-Aug-01
Si7943DP
VISHAY
Vishay Siliconix
New Product
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage Vegan) I/tos = VGS, ID = -250 “A Mh60 V
Gate-Body Leakage less VDs = 0 V, VGS = ck 12 V cl: 100 nA
VDs=-24V,VGs=0V -1
Zero Gate Voltage Drain Current loss “A
Vos = -24 V, VGS = 0 V, To = 55°C -5
On-State Drain Currenta ID(on) Vos 2 -5 V, VGS = -10 V -30 A
VGS = -10 V, ID = -9.4 A 0.020 0.025
Drain-Source On-State Resistancea rDs(on) VGs = -4-5 V ID = -8.6 A 0.024 0.030 Q
VGS = -2.5 V, ID = -3.0A 0.037 0.045
Forward Transconductancea gfs I/tos = -15 V ID = -9.4 A 15
Diode Forward Voltagea VSD ls = -2S A, VGS = 0 V -0.8 -1.2 V
Dynamicb
Total Gate Charge % 24 36
Gate-Source Charge Qgs Vros = -1 5 V, VGS = -A.5 V, ID = -9.4 A 8.5 nC
Gate-Drain Charge di 5.0
Gate Resistance Rs 2.9 Q
Turn-On Delay Time td(on) 18 27
Rise Time tr VDD = _15 V, RL = 15 g 40 60
Turn-Off Delay Time td(off) ID _ -1 A, VGEN = -10 V, Rs = 6 Q 100 150 ns
Fall Tlme tr 60 90
Source-Drain Reverse Recovery Time trr IF = -2.9 A, di/dt = 100 Alps 50 90
a. Pulsetest; pulse width S 300 ps, duty cycle 3 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
30 30 I
Vss=10thru3V (/
Ci] Ili:.] /
E 18 E 18
'r, 'r,
S 12 E 12
D 2 V D
_ 6 - 6
0 2 4 6 8 10 0.0 0.5 3.0 3.5
Ws - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
www.vishay.com
DocumentNumber: 71629
S-04438-Reu B, 13-Aug-01
VISHAY
Si7943DP
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
fit 0.060
g th045 - VGS 2.5 V
8 or,-'"'
L 0.030 Vcs = 4.5 v -
0.015 Vss=101/ -
0 s 12 18 24 30
ID - Drain Current (A)
Gate Charge
1 1 pr
VDS = 15 v
s. ID = 9.4 A /
fi).' I
ii!",'' 4
> 2 Je
o 10 20 30 40 50 60
09 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
Tu =150°C
Is — Source Current (A)
0.0 0.2 0.4 0.6 0.8 1.0
V30 - Source-to-Drain Voltage (V)
C — Capacitance (pF)
rDs(0n) — On-Resistance (Q)
I’Dsmn) - On-Resistance (9)
(Normalized)
-50 -25 O 25 50 75 100 125 150
Capacitance
l Coss
""'----.....
O 6 12 18 24 3O
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
l 1 w'''''
VGS= 10V
|D=9.4A
o,,,,,-''''''''
TJ - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
ID = 9.4A
0 2 4 6 8 10
V68 - Gate-to-Source Voltage (V)
DocumentNumber: 71629
S-04438-Rev. B, 13-Aug-01
www.vishay.com
Si7943DP VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power, Junction-to-Ambient
0.3 100
0.1 "ss, ID = 250 “A 80 "
S' "ss,
8 60 t
g "ss, it l
E -0 1 _ g \
'l)..] 'N, fi] 40
g' "ss, “u
-02 N.
'N, 20
_ '\‘~~-....
-0.5 0
-50 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10
To - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
li' Duty Cycle = 0.5
I' 8 0.2
lit ' 0.1 T
u L 0.1 PDM
I': E 1
g -21 t2 t
a 1. Duty Cycle, D = T1
2. Per Unit Base = RNA = 60°CIW
. 3. TJM - TA = PDMZthAm
Single Pulse 4. Surface Mounted
Ity-A 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
li' Duty Cycle = 0.5
3% 0.2
if',' g
tt E 0.1
Single Pulse
1o-4 1o-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71629
4 S-04438-Reu B, 13-Aug-01
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