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SI7941DP
Dual P-Channel 30-V (D-S) MOSFET
VISHAY
Si7941DP
New Product
Vishay Siliconix
Dual P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
Vos (V) rDS(on) (Q) ID (A)
0.027 @ Vss = -10 v -9.0
0.039 @ VGS = -4.5 V -7.5
PowerPAKW SO-8
Bottom 1Aew
FEATURES
q TrenchFET© Power MOSFET
q New Low Thermal Resistance PowerPAK"'
Package with Low 1.07-mm Profile
APPLICATIONS
q 3-4 Cell Li-Ion Battery Switch
q Bus Load Switch for Notebook/Desktop Computers
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage V03 -30
Gate-Source Voltage VGS i 20
TA = 25°C -9.0 -5.8
Continuous Drain Current (TJ = 150°c)a ID
TA = 70°C -7.2 -4.7 A
Pulsed Drain Current IBM -30
continuous Source Current (Diode Conduction)a ls -2S -1.2
TA = 25°C 3.5 1.4
Maximum Power Dissipationa PD W
TA = 70°C 2.2 0.9
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 26 35
Maxi J tion-to-Ambienta R
aXImum unc Ion o m Ien Steady State WA 60 85 °C/W
Maximum Junction-to-Case (Drain) Steady State Rch 2.2 2.7
a. Surface Mounted on 1" x l" FR4 Board.
Document Number: 71630 www.vishay.com
S-03967-Rev. A, 04-Jun-01
Si7941DP
VISHAY
Vishay Siliconix
New Product
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage Vegan) I/tos = VGS, ID = -250 “A -1.0 V
Gate-Body Leakage less VDs = 0 V, VGS = $20 V cl: 100 nA
VDs=-24V,VGs=0V -1
Zero Gate Voltage Drain Current loss “A
Vos=-24V,Vss=0V,T,j=701 -10
On-State Drain Currenta ID(on) I/tos = -5 V, VGS = -10 V -30 A
VGs = -10 V, ID = -9 A 0.022 0.027
Drain-Source On-State Resistance" rDS(on) Q
VGS = -A.5 V, ID = -5A 0.032 0.039
Forward Transconductancea gts I/rss = -15 V, ID = -2.5 A 14
Diode Forward Voltagea VSD ls = -2.9 A, VGs = 0 V -0.8 -1.2 V
Dynamich
Total Gate Charge % 42 51
Gate-Source Charge Qgs VDs = -15 V, N/ss = -10 V, ID = -9 A 8.5 nC
Gate-Drain Charge di 7.5
Gate Resistance Re 2.9 Q
Turn-On Delay Time tum“) 18 30
Rise Time tr VDD = -15 V, RL = 15 Q 29 45
Turn-Off Delay Time ‘dmm ID _ -1 A, VGEN = -10 V, Re = 6 9 65 100 ns
Fall Time tr 27 41
Source-Drain Reverse Recovery Time trr IF = -2.9 A, di/dt = 100 Alps 50 90
a. Pulsetest; pulse width s 300 ps, duty cycle 3 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
VGS = 10 thru 5V
---- 4 V
ii;". /' _iaC:'.,
E’ 18 E 18
I' 12 a 12
Cl o Cl
I I To = 125 C
- 6 3 V - 6
l 25°C
2'v \ -55 c;
0 2 4 6 8 10 0 1 2 3 4 5
Vos - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71630
S-03967-Reu A, 04-Jun-01
VISHAY
Si7941DP
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
fit 0.060
m 0.045
' VGS = 4.5 V
8 _,.....,-----"'''"
L 0.030 Vcs=10V -
0 6 12 18 24 30
ID - Drain Current (A)
Gate Charge
VDS = 15 V
lro=9A
6 ",,/'''
4 s,,/''
V GS — Gate-to-Source Voltage (V)
O 8 16 24 32 4O
09 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
TJ=150°C
Is — Source Current (A)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V30 - Source-to-Drain Voltage (V)
C — Capacitance (pF)
rDs(0n) — On-Resistance (Q)
I’Dsmn) - On-Resistance (9)
(Normalized)
Capacitance
2800 _
1400 (
k Coss
700 "hs.,
0 6 12 18 24 30
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8 l _
VGS = 10 V
15 - ID = 9 A ,,,P'
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
ID = 9 A
0.03 _
0 2 4 6 8 10
V68 - Gate-to-Source Voltage (V)
Document Number: 71630
S-03967-Rev. A, 04-Jun-01
www.vishay.com
Si7941DP VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power, Junction-to-Ambient
0.4 100
0.2 80 '
ID = 250 WA
, E 60 t
tf-,' -0.2 "s, ii" l
> \ it \
'l)..] "ss,, fi] 40
g' 0.4
'ss, Ns,
-0.6 N. 20 _
N "ss--".,.,,,,,..
-0.8 0
-50 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10
To - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
li' Duty Cycle = 0.5
I' 8 0.2
lit ' 0.1 T
u L 0.1 PDM
I': E 1
g -21 t2 t
a 1. Duty Cycle, D = T1
2. Per Unit Base = RNA = 60°CIW
. 3. TJM - TA = PDMZthAm
Single Pulse 4. Surface Mounted
Ity-A 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
li' Duty Cycle = 0.5
I' a 0.2
if',' g
tt E 0.1
Single Pulse
1o-4 1o-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71630
4 S-03967-Reu A, 04-Jun-01
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