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SI7901EDN
Dual P-Channel 20-V (d-S) MOSFET
VISHAY
Si7901EDN
New Product
Vishay Siliconix
Dual P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (Q) ID (A)
0.048 @ l/GS = -4.5 v -63
-20 0.068 @ Vss = -2.5 v -52
0.090 @ VGS = -1.8 V -4.6
PowerPAK"' 1212-8
Bottom IAew
FEATURES
. TrenchFET© Power MOSFETS: 1.8-V Rated
. ESD Protected: 4500V
. Ultra-Low Thermal Resistance, PowerPAK'"
Package with Low 1.07-mm Prohle
APPLICATIONS
o Bidirectional Switch
Channel MOSFET P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS -20
Gate-Source Voltage N/ss i 12
TA = 25°C -6.3 -A.3
Continuous Drain Current (TJ = 150°C)3 ID
TA = 85°C -A.5 -3.1
Pulsed Drain Current IBM -20
continuous Source Current (Diode Conduction)" ls -2.3 -1 .1
TA = 25°C 2.8 1.3
Maximum Power Dissipation" PD W
TA = 85°C 1.5 0.7
Operating Junction and Storage Temperature Range T J, Tsta -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 35 44
Maximum Junction-to-Ambienta RNA
Steady State 75 94 “CM
Maximum Junction-to-Case (Drain) Steady State RthJc 4 5
a. Surface Mounted on 1" x l" FR4 Board.
Document Number: 71430 www.vishay.com
S-03710-Rev. A, 14-May-01
Si7901EDN
VISHAY
Vishay Siliconix
New Product
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage Vegan) I/tos = VGS, ID = -800 WA Mh45 V
Vros--0V,VGs= i4.5V i105 VA
Gate-Body Leakage less
VDs=0V,VGs=ce121/ $10 mA
VDs=-16V,VGs=0V -1
Zero Gate Voltage Drain Current bss 11A
Vros=-16V,Vss--0V,T,j=85l -5
On-State Drain Currenta Imam) Vos s -5 V, VGS = -A.5 V -20 A
Vss = -4.5 v, b = -6.3 A 0.041 0.048
Drain-Source On-State Resistance rDs(on) VGs = -2.5 V, ID = -5.3 A 0.057 0.068 Q
VGS = -1 .8 V, ID = -1 A 0.072 0.090
Forward Transconductancea 9ts I/rss = -15 V, ID = -63 A 14
Diode Forward Voltagea VSD ls = -22 A, VGS = 0 V -0.8 -1.2 V
Dynamicb
Total Gate Charge Q9 12 18
Gate-Source Charge Qgs VDS = -l 0 V, VGS = -4.5 V, ID = -6.3 A 2.5 no
Gate-Drain Charge di 2.9
Turn-On Delay Time tdmn) 2.5 4
Rise Time tr VDD = -10 v, RL = 10 Q 4 us
Turn-Off Delay Time taom ID _ -1 A, VGEN = -4.5 V, RG = 6 C2 15 23
Fall Time tr 12 18
a. Pulsetest; pulse width 5 300 us, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Gate-Current vs. Gate-Source Voltage
Gate Current vs. Gate-Source Voltage
8 10,000
E f; 100
5 's 10
P. 4 'ij.
8 6' 1
_0 2 f 0.1
o,,.,-,,,,,,,.,,,,,,,-,.,,,-,---) 0.01
0 0.001
0 4 8 12 16 o 3 6 9 12 15
kss - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71430
2 S-03710-Reih A, 14-May-01
VISHAY
Si7901EDN
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
20 / v''''i'T" I l
/) / VGS = 5 thru 2.5 v
E 12 v - E
5 / y,
.E I / E
e 8 I'
Cl ( Cl
0.0 0.5 1.0 1.5 2.0 2.5 3.0 4.0
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
A VGS = 1.8 V
Cl 0.12
8 'tlg
o5. 0 09 8
fl . 1:
il,'' "--''''''" VGS = 2.5 V Ji'.
A o..,.,,....-"---"'"'""" VGS I
h 0.03
0 4 8 12 20
b - Drain Current(A)
Gate Charge
A VDS = 10 V
i 4 ID = 6.3 A / a
oils.' " z
j,' / g G"
03 "a' ID
L' 3 f 17, y
cn “F E
s) / 8 is
S? 2 I I V
'i' / (oi,?,]
0 2 4 6 8 10 14
- Total Gate Charge (nC)
Transfer Characteristics
TC = -55''C I
16 25°C I l
"'s'sd'
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VGS - Gate-to-Source Voltage (V)
Capacitance
1600 ( ss
400 i "s.... Coss
a''--...,
0 Crss
0 4 8 12 16 20
VDs - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
VGS = 4.5 V w'''''
ID = 6.3 A
v,,,,,,-'''''''''
0.9 ',,,w''"
-50 -25 O 25 50 75 100 125 150
TJ - Junction Temperature CC)
Document Number: 71430
S-0371(r-Rev. A, 14-May-01
www.vishay.com
Si7901EDN
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
TJ =150°C
ID=6.3 A
ls — Source Current (A)
rDS(0n) — On-Resistance (g)
0.3 0.6 0.9 1.2 1.5 1.8
V30 - Source-to-Drain Voltage (V)
Threshold Voltage
VGS - Gate-to-Source Voltage (V)
Single Pulse Power, Junction-to-Ambient
I l 50
0.3 ID = 800 ps/k
w,,,,,-''''''
Power (W)
VGS(th) Variance (V)
25 50 75 100 125 150 0.001
To - Temperature (°C)
0.01 0.1 1 100 600
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Single Pulse
10-4 10-3 10-2 IO-l 1
Square Wave Pulse Duration (sec)
Notes:
_.L: _
1. Duty Cycle, D = T
2, Per Unit Base = RthJA = 75°CNV
3. TJM - TA = PDMZthJAm
4. Surface Mounted
100 600
www.vishay.com
Document Number: 71430
S-03710-Reih A, 14-May-01
“3% Si7901EDN
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Normalized Effective Transient
Thermal Impedance
Normalized Thermal Transient Impedance, Junction-to-Case
1 Duty Cycle = 0.5
0.1 0.1
-_rr 0.05
- 0.02
Single Pulse
104 1(r3 1o-2 IO-I 1
Square Wave Pulse Duration (sec)
Document Number: 71430 www.vishay.com
S-0371(r-Rev. A, 14-May-01 5
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