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SI7892DP
N-Channel 30-V (D-S) MOSFET
VISHAY
Si7892DP
New Product
Vishay Siliconix
N-Channel 30-v (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
30 0.0045 @ VGS = 10 v 25
0.006 @ VGS = 4.5 v 22
PowerPAK"' SO-8
Bottom b7ere
FEATURES
q TrenchFET© Power MOSFET
q New Low Thermal Resistance PowerPAK'"
Package with Low 1.07-mm Profile
q Low Gate Charge
APPLICATIONS
o Synchronous Rectifier
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage Vos 30
Gate-Source Voltage VGS $20
TA = 25°C 25 15
Continuous Drain Current (TJ = 150°C)a ID
TA = 70''C 20 12
Pulsed Drain Current (10 us Pulse i/1fidth) IBM 60
Continuous Source Current (Diode Conduction)" ls 4.5 1.6
TA = 25''C 5.4 1.9
Maximum Power Dissipationa PD W
TA = 70°C 3.4 1.2
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 18 23
Maximum Junction-to-Ambient" R
Steady State thJA 50 65 °C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 1.0 1.5
a. Surface Mounted on l" x 1" FR4 Board.
Document Number: 71773
S-05627-Rev, A, 29-Jan-02
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Si7892DP
I=7''"
VISHAY
Vishay Siliconix
New Product
SPECIFICATIONS tTa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 uA 1.0 V
Gate-Body Leakage IGSS VDs = 0 V, VGs = i 20 V l 100 nA
VDS=24V,VGS=OV 1
Zero Gate Volta e Drain Current I
g DSS VDs=24V,Vss=0V,Tu=551 5 ”A
On-State Drain Currenta low”) Vos 2 5 V, VGS = 10 V 30 A
VGS =10 V, ID = 25 A 0.0037 0.0045
Drain-Source On-State Resistancea rDs(on) Q
VGS = 4.5 V, ID = 22 A 0.0048 0.006
Forward Transconductancea gfs Vos = 15 V, ID = 25 A 80 S
Diode Forward Voltagea VSD ls = 4.5 A, VGS = 0 V 0.75 1.2
Dynamicb
Total Gate Charge Q9 25 35
Gate-Source Charge Qgs VDS = 15 V, VGS = 4.5 V, ID = 25 A 6.7 I
Gate-Drain Charge di 9.7
Turn-On Delay Time td(on) 17 30
Rise Tlme tr VDD =15 V, RL =15 Q 10 20
Turn-Off Delay Time tdmm In E 1 A, VGEN = 10 V, Re = 6 Q 65 130 ns
Fall Time tf 35 60
Source-Drain Reverse Recovery Time trr IF = 2.9 A, di/dt = 100 Alus 50 80
a. Pulse test; pulse width s 300 us, duty cycle 3 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
Vss=10thru4V I
a? 40 a?
:15) 3 V "'iz,' 30
h ".---"'"" " a
5 3O 'r, TC = 125 C
E E 20
I 20 I 25°C /
co Q 'sk
- - 10 '
10 -55''C
0 1 2 3 4 0 1 2 3 4 5
VDs - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
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Document Number: 71773
S-05627-Reu. A, 29-Jan-02
VISHAY
Si7892DP
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
rDS(on) — On-Resistance ( Q)
S — Gate-to-Source Voltage (V)
| s — Source Current (A)
On-Resistance vs. Drain Current
VGS = 4.5 V
0.004 ---- VGS=10V -
0 10 20 30 40 50 60
ID - Drain Current(A)
10 Gate Charge
1 1 p'"
VDS = 15 V s,,/'''
8 - ID = 25 A
6 sw'''''
0 10 20 30 40 50 60
Q9 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
0.00 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
— -R ' s2
r03(on) ($?mjlszIZt‘3nCH ) c _ Capacitance(pF)
I’Dsmn) - On-Resistance (Q)
Capacitance
'ss.,. Ciss
0 6 12 18 24 30
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
Vss=10V /
-ID--25A ',,w''"
ow''''
w''''''
-50 -25 0 25 50 75 100 125 150
To - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
Ns,, b=25A
2 4 6 8 IO
VGS - Gate-to-Source Voltage (V)
Document Number: 71773
S-05627-Reu. A, 29-Jan-02
www.vishay.com
Si7892DP
I=7''"
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.6 200
0.4 'ss (
0.2 "s, I - 250 "
ki Nc g l
t, AJ.2 "
'I 's g \
ij' Al 4 "s, EL 80 N
'ss, 40
-1.0 0
-50 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10
TJ - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Notes:
_.L:t|;_t1
1. Duty Cycle, D = T2
2, Per Unit Base = RthJA = 50°CNV
3. To, - TA = PDMZthJAm
4. Surface Mounted
10 100 600
E Duty Cycle = 0.5
S a 0.2
if',' g
i-,'?,] T
v 0.1 PDM
Single Pulse
ltr" 1ty-3 1ch 1o-1 1
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
li' Duty Cycle = 0.5
I' a 0.2
if',' g 0.1
8 a 0.1
g C Single Pulse
0.05 - 0.02
10-4 10-3 10-2 IO-I
Square Wave Pulse Duration (sec)
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Document Number: 71773
S-05627-Reu. A, 29-Jan-02
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