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SI7846DP
N-Channel 150-V (D-S) MOSFET
VISHAY
Si7846DP
New Product
Vishay Siliconix
N-Channel 150-v (D-S) MOSFET
PRODUCT SUMMARY
Vos (V) rDS(on) (Q)
ID (A)
150 0.050@VGs=10V
POwerPAK"" 80-8
Bottom Ihew
FEATURES
. TrenchFET© Power MOSFETS
. New Low Thermal Resistance PowerPAK"'
Package with Low 1.07-mm Prohle
. PWM Optimized for Fast Switching
APPLICATIONS
. Primary Side Switch for High Density DC/DC
. Telecom/Server 48-V DC/DC
. Industrial and 42-V Automotive
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 150
Gate-Source Voltage l/ss 21:20 V
TA = 25°C 6 7 4.0
Continuous Drain Current (To = 150°c)a TA = 70"C ID 5 4 3.3
Pulsed Drain Current IBM 50 A
Avalanch Current L = 0.1 mH IAS 25
Continuous Source Current (Diode Conduction)" ls 4.3 1.6
TA = 25°C 5.2 1.9
Maximum Power Dissipation" TA = 70°C PD 3.3 1.2 W
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 19 24
Maximum Junction-to-Ambienta Steady State RNA 52 65 ”CM
Maximum Junction-to-Foot (Drain) Steady State RthJF 1.5 1.8
a. Surface Mounted on 1" x l" FR4 Board.
Document Number: 71442
S-03468-Rev. A, 03-Apr-01
www.vishay.com
Si7846DP
VISHAY
Vishay Siliconix
New Product
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDs = Kas, ID = 250 MA 2.0 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = 120 V d: 100 nA
VDs=120V,VGs=0V 1
Zero Gate Voltage Drain Current IDSS WA
VDS=120V,VGS=0V,TJ=55°C 5
On-State Drain Currenta |D(on) Vos 2 5 V, VGs = 10 V 50 A
Drain-Source On-State Resistance" rDS(on) VGS = 10 V, ID = 5 A 0.041 0.050 Q
Forward Transconductancea gfs Vos = 15 V, ID = 5 A 18 S
Diode Forward Voltagea VSD ls = 2.8 A, VGS = 0 V 0.75 1.1 V
Dynamicb
Total Gate Charge Q9 30 36
Gate-Source Charge Qgs VDs = 75 V, VGs = 10 V, ID = 5 A 8.5 nC
Gate-Drain Charge di 8.5
Turn-On Delay Time tam) 12 18
Rise Time tr VDD = 75 V, RL =15 Q 7 11 ns
Turn-Off Delay Time thott) ID 2 5 A, VGEN = 10 V, Re = 6 $2 22 33
Fall Time tf IO 15
Gate Resistance Rg 0.85 Q
Source-Drain Reverse Recovery Tlme trr IF = 2.8 A, di/dt = 100 A/gs 4O 70 ns
a. Pulsetest; pulse width cc 300 us. duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
50 l 50
VGS =10thru 7 v
40 1 40
Ct ',,,p"'' Ci::
E) 30 E 30
'r, 'r,
S 20 E 20
I I TC = 125°C
- IO - 10 I
5V 25°C "s l
3, 4 v J -55) C
0 2 4 6 8 10 0 2 4 5 6 7
Vros - Drain-to-Source Voltage (V) VGs - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71442
S-03468-Rev. A, 03-Apr-01
VISHAY
Si7846DP
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
fit 0.08
if 0.06
t VGS = 10 v ----"
I _.....-----""
0 10 20 30 40 50
ID - Drain Current (A)
Gate Charge
VDS = 75 V
s. ID = 5 A
fi).' 16 I
ii!",'' 8
o 15 30 45 60
09 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
Is — Source Current (A)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V30 - Source-to-Drain Voltage (V)
C — Capacitance (pF)
rDs(0n) — On-Resistance (Q)
I’Dsmn) - On-Resistance (9)
(Normalized)
Capacitance
F" Coss
0 30 60 90 120 150
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
VGS = 10 V
ID = 5 A /
s,,,,,,,,,-''''''"
-50 -25 O 25 50 75 100 125 150
TJ - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
2 4 6 8 10
V68 - Gate-to-Source Voltage (V)
Document Number: 71442
S-03468-Rev. A, 03-Apr-01
www.vishay.com
Si7846DP
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
V650,» Variance (V)
Threshold Voltage Avalanche Current vs. Time
1.0 100
0 5 "s,
"s, ID = 250 “A
"ii:". 10
0.0 ?t
0.5 's, T = 125°C
-1.5 0.1
-50 -25 0 25 50 75 100 125 150 1o-5 Itr4 Ity-e, Io-f? Io-l 1
To - Temperature (°C) Time (sec)
Single Pulse Power, Juncion-To-Ambient
\“.-u.
0.001 0.01 0.1 1 10
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
li' Duty Cycle = 0.5
g‘é 0.2
g E Notes:
E E -T-
TD g PDM
a, o 0.1
2 .5 I
E 11 _
5 i tg "
Z 1. Duty Cycle, D = T
2. Per Unit Base = RthA = 52°C/W
Sin Ie Pulse 3. TJM - TA = PoMZthoA(t)
g 4. Surface Mounted
10-4 Ity-i? 1o-2 Io-l 1 10 100 600
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71442
S-03468-Rev. A, 03-Apr-01
VZISHAY Si7846DP
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Case
Duty Cycle = 0.5
Normalized Efiective Transient
Thermal Impedance
I I I I
Single Pulse
10-4 Ity-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
Document Number: 71442 www.vishay.com
S-03468-Rev. A, 03-Apr-01 5
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