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SI7844DP
Dual N-Channel 30-V (D-S) MOSFET
VISHAY
New Product
Si7844DP
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY 'tgt?,":
v v r Q I A G t6
Ds( ) DS(on)( ) D ( ) Ite'?,', bos
0.022@Vss=10V IO bet
0.030 @ VGs = 4.5 V 8.5
D1 D1 D2 D2
PowerPAK TM
G1 oJ G2 o-]
Bottom View N-Channel MOSFET N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage Vros 30
Gate-Source Voltage VGS $20
TA = 25°C 10 6.4
Continuous Drain Current (TJ = 150°C)a ID
TA = 70''C 8.0 5.1
Pulsed Drain Current IBM 20
Continuous Source Current (Diode Conduction)a Is 29 1.1
TA = 25°C 3.5 1.4
Maximum Power Dissipation" PD W
TA = 70°C 2.2 0.9
Operating Junction and Storage Temperature Range Ts Tstg -55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 26 35
M . . - -A . a R
axnmum Junction to mbient Steady State WA 60 85 'CA/ll
Maximum Junction-to-Case (Drain) Steady State Rch 3.9 5.5
a. Surface Mounted on l" x l" FR4 Board.
Document Number: 71328
S-02456-Rev. A, 06-Nov-00
www.vishay.com
Si7844DP
VISHAY
Vishay Siliconix New Product
SPECIFICATIONS fra = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGsnh) VDS = VGS, ID = 250 LA 0.8 V
Gate-Body Leakage less VDs = 0 V, VGS = 1:20 V ch 100 nA
Vos=24V,VGs=0V 1
Zero Gate Volta e Drain Current I
g DSS VDs=24V,Vss=0V,Tu=55c'C 5 ”A
On-State Drain Current3 low“) I/os 2_' 5 V, VGS = 10 V 20 A
VGS =10 V, ID = 10A 0.018 0.022
Drain-Source On-State Resistancea rDs(on) Q
VGS = 4.5 V, ID = 8.5 A 0.024 0.030
Forward Transconductancea gfs VDS = 15 V, ID = 10 A 22 S
Diode Forward Voltagea VSD ls = 2.9 A, VGS = O V 0.75 1.2
Dynamicb
Total Gate Charge Q9 13 20
Gate-Source Charge Qgs VDS = 15 V, VGS = 10 V, ID = 10 A 2 nC
Gate-Drain Charge di 2.7
Turn-On Delay Time td(on) 8 16
Rise Tlme t, VDD=15V,RL=15Q 10 20
Turn-Off Delay Time td(ott) In - 1 A, VGEN = 10 V, Rs = 6 Q 21 40 ns
Fall Time tf 10 20
Source-Drain Reverse Recovery Time trr IF = 2.9 A, di/dt = 100 Alps 40 8O
a. Pulse test; pulse width 2 300 us, duty cycle 5 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
20 l 20
1/Gs=10thru4V we''''"" 3V
16 / 16
s: /" ct
E 12 l E 12
tD I (D l
e 8 E 8
I I TC = 125°C
_ 4 - 4 o , y
2V 25 C \1 ,
f, i -55 C
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71328
2 S-02456-Reu A, 06-Nov-00
VISHAY
Si7844DP
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
9’, 0.032
g 0.024 V68 4.5V -
6 VGS = 10 V
I 0.016 -
0 4 8 12 16 20
ID - Drain Current (A)
Gate Charge
Vros = 15 V /"
E ID =10 A sp''
, //'"
's e /
0 3 6 9 12 15
Q9 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
TJ = 150°C
Is — Source Current(A)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V50 - Source-to-Drain Voltage (V)
C — Capacitance (pF)
rDS(on) - On-Resistance (Q)
rDS(on) — On-Resistance ( 9)
(Normalized)
Capacitance
'ss,.,, Ciss
"ss... Coss
Crss -ee-
's-.,,,..:,
0 6 12 18 24 3O
I/os - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
VGS = 10 V
ID = 10 A /
-,,,,,w'''''''''''
-50 -25 0 25 50 75 100 125 150
T J - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
ID: 10A
0.03 N,
0.02 "ss,
0 2 4 6 8 10
V65 - Gate-to-Source Voltage (V)
Document Number: 71328
S-02456-Rev. A, 06-Nov-00
www.vishay.com
Si7844DP
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
V650,» Variance (V)
Threshold Voltage Single Pulse Power
0.4 100
0.2 80 i;
ID = 250 11A
iit 60 \
-0.2 "s, (if,' \
"ss, n. 40
-0.4 t N
"N, \~.____“
-0.8 0
-50 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10
T: - Temperature (°C) Tlme (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
E: Duty Cycle = 0.5
ifj E Notes:
[t E 0.1 T
g E 0.1 't"
% .E 0.05
t, -ly-1 ta 11
a 0.02 1. Duty Cycle, D = T2
2. Per Unit Base = Rth0A = 60°CNV
Single Pulse 3. TJM - TA = PDMzWA“)
4. Surface Mounted
10-4 10-3 10-2 IO-l 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
E, Duty Cycle = 0.5
:12: g- 0.2
E l? 0.1
Single Pulse
1 0-5 1 ty-A 10-3 1 0-2 1 o-1 1
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71328
S-02456-Reu A, 06-Nov-00
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