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SI7703EDN
P-Channel 20-V (D-S) MOSFET With Schottky Diode
VISHAY
Si7703EDN
New Product
Vishay Siliconix
Single P-Channel 20-V (D-S) MOSFET With Schottky Diode
MOSFET PRODUCT SUMMARY
VDS (V) rDS(on) (Q) ID (A)
0.048 @ veg = -4.5 v -63
-20 0.068 @ Vss = -2.5 v -5.3
0.090 @ VGS = -1.8 v -A.6
SCHOTTKY PRODUCT SUMMARY
v, (V)
VKA (V) Diode Forward Voltage IF (A)
20 0.48 v @ 0.5A 1.0
PowerPAK TM 1212-8
Bottom Mew
FEATURES
. TrenchFET© Power MOSFETS: 1.8-V Rated
. ESD Protected: 4500V
. Ultra-Low Thermal Resistance, PowerPAK'"
Package with Low 1.07-mm Prohle
APPLICATIONS
. Charger Switching
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 sec Steady State Unit
Drain-Source Voltage (MOSFET and Schottky) VDS -20
Reverse Voltage (Schottky) VKA 20 V
Gate-Source Voltage (MOSFET) VGS i 12 i 12
TA = 25°C -6.3 -4.3
Continuous Drain Current (TJ = 150°C) (MOSFET)a b
TA = 85''C -4.5 -3.1
Pulsed Drain Current (MOSFET) IBM -20 A
Continuous Source Current (MOSFET Diode Conduction" Is -2.3 -1 1
Average Foward Current (Schottky) IF 1.0
Pulsed Foward Current (Schottky) IFM 7
TA = 25°C 2.8 1.3
Maximum Power Dissipation (MOSFET)a
TA = 85°C 1.5 0.7
TA = 25°C D 2.0 1.1
Maximum Power Dissi ation Schottk a
p ( y) TA = 85"C 1.0 0.6
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 I
a. Surface Mounted on 1" x1" FR4 Board.
Document Number: 71429 www.vishay.com
S-03709-Rev. A, 14-May-01 1
Si7703EDN
VISHAY
Vishay SiliConix New Product
THERMAL RESISTANCE RATINGS
Parameter Device Symbol Typical Maximum Unit
MOSFET 35 44
t s 10 sec
Schottky 51 64
J ti -t -A bi ta R
unc IOn o m len MOSFET thA 75 94
St d St t "C/W
ea y a e Schottky 91 115
MOSFET 4 5
Junction-to-Case Drain Stead State R
( ) y Schottky thJC 10 12
a. Surface Mounted on I'' x I" FR4 Board.
MOSFET SPECIFICATIONS tTo = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage Vegan) VDS = VGS, ID = -800 MA Ah45 V
VDS=0V1VGS= i4.5V i1.5 WA
Gate-Body Leakage less
VDs=0V,VGs--ce12V i100 mA
VDs=-16V,VGs=0V -1
Zero Gate Voltage Drain Current loss WA
VDs=-16V,VGs=0V,TJ=850C -5
On-State Drain Currenta 'D(on) VDS s -5 V, VGS = -4.5 V -20 A
VGS = -4.5 V, ID = -6.3 A 0.041 0.048
Drain-Source On-State Resistancea rDS(ton) N/ss = -2.5 V, ID = -5.3 A 0.057 0.068 C2
VGS = -1.8 V, lo = -1 A 0.072 0.090
Forward Transconductancea gfs Vos = -10 V, ID = -63 A 14 S
Diode Forward Voltagea VSD ls = -2.3 A, VGS = 0 V -0.8 -1.2 V
Dynamicb
Total Gate Charge A; 12 18
Gate-Source Charge Qgs VDS = -10 V, I/ss = -4.5 V, ID = -6.3 A 2.5 nC
Gate-Drain Charge di 2.9
Turn-On Delay Time tdwn) 2.5
Rise Time ' VDD = -10 V, RL = 10 Q 4 vs
Turn-Off Delay Time td(ott) '0 E -1 A, VGEN = -4.5 V, Re = 6 C2 15 23
Fall Time tr 12 18
a. Pulsetest; pulse width 5 300 ps. duty cycle 3 2%.
b. Guaranteed by design, not subject to production testing.
SCHOTTKY SPECIFICATIONS tTa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
IF = 0.5A 0.42 0.48
Forward Voltage Drop VF V
IF = 0.5 A, TJ = 125°C 0.33 0.4
v, = 20 V 0.002 0.100
Maximum Reverse Leakage Current lm, v, = 20 V, TJ = 85°C 0.10 1 mA
Vr=20V,To=125c'C 1.5 10
Junction Capacitance CT Vr = 10 V 31 pF
www.vishay.com Document Number: 71429
S-03709-Reih A, 14-May-01
VISHAY
New Product
Si7703EDN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
MOSFET
Gate-Current vs. Gate-Source Voltage
S? 4 o
U) (l)
.0 2 J _8
0 _.,-,,,,,,,---''"'''"''''''
0 4 8 12 16
VGS - Gate-to-Source Voltage (V)
Output Characteristics
20 / r,,.''''''''''!" 1 l
/ / VGS = 5 thru 2.5 v
E 12 2 V - E
o (/),, o
2 8 I'
o 1 5 V o
- 4 I -
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
A VGS = 1.8 V
Cl 0.12
E 0.09 c
if!' "w'''''" VGs = 2.5 v -,.,,,w'" fl.
O 0 06 _....,.,----''''' 8
I o....----"'''''" v - 4 5 V I
E" ----"" GS - . O
h 0.03
O 4 8 12 16 20
ID - Drain Current(A)
Gate Current vs. Gate-Source Voltage
10,000
10 TJ=150°C
0 3 6 9 12 15
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Tc = -55''C //I
16 25°C\‘ I
J, 125°C
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VGs - Gate-to-Source Voltage (V)
Capacitance
1600 ( ss
400 i C
0 4 8 12 16 20
VDS - Drain-to-Source Voltage (V)
Document Number: 71429
S-03709-Rev. A, 14-May-01
www.vishay.com
Si7703EDN VISHAY
Vishay SiliConix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED) MOSFET
Gate Charge On-Resistance vs. Junction Temperature
5 I I " 1.5 I I
' IVDSEQOAV / 'tstir') w'''''
2; 4 7 D = ' A D = .
a / g 1.3 /
g 8 'f
> a 6 w'''''
e 3 " 3 h'
3 tD =
O m tO
o? c': g 1.1
S? O 2
is. 2 / I V
'i' /- f.cs] w,,,,,,,-'''''''
w 0.9 I
8 1 f ,,,,w'''"
> w,,,,,,,,.''''''
0 2 4 6 8 10 12 14 -50 -25 O 25 50 75 100 125 150
O9 - Total Gate Charge (nC) Tu - Junction Temperature (°C)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
tC m 0.10
tg TJ =150°C E 0.08 ID = 6.3 A
g "= o 06
m I 'ss.,
o 0.3 0.6 os 1.2 1.5 1.8 0 1 2 3 4 5
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Threshold Voltage Single Pulse Power, Junction-to-Ambient
0.4 I I 50
ID = 800 0A (
0.3 40 l
I 0.2 /
8 s,,,,,,,,,-'''''' g
m 0 1 l '-
> ,,,,w''" tlr', I
",iC,c.] EL 20
8 0.0 \
0 1 10 h
- . “u.
‘h---.
-0.2 0
-50 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 100 600
T J - Temperature CC) Time (sec)
www.vishay.com Document Number: 71429
4 S-03709-Reih A, 14-May-01
“3% Si7703EDN
New Product Vishay Siliconix
TYPICAL CHARACTERISTICS (25° C UNLESS NOTED) MOSFET
Normalized Thermal Transient Impedance, Junction-to-Ambient
"f',' g
E a 0.1
b- t2 tl
a 1. Duty Cycle, D = T,
2. Per Unit Base = RthJA = 75°CNV
. 3. TJM - TA = PDMZthJA“)
Single Pulse 4. Surface Mounted
10-4 10-3 IO-? 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
"if',' g
"i' E, 0.1
ltr' 1o-3 10-2 IO-l 1
Square Wave Pulse Duration (sec)
TYPICAL CHARACTERISTICS (25° c UNLESS NOTED) SCHOTTKY
Reverse Current vs. Junction Temperature Forward Voltage Drop
g 1 Ci.:]
(D d.)
'g o 1 E
n: 0.01 fl
0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0
TJ - Junction Temperature (°C) VF - Forward Voltage Drop (V)
Document Number: 71429 www.vishay.com
S-03709-Rev. A, 14-May-01 5
Si7703EDN
VISHAY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
SCHOTTKY
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
Single Pulse
10-4 10-3
Duty Cycle = 0.5
0.1 0.05
Normalized Effective Transient
Thermal Impedance
Single Pulse
Capacitance
"ss-,,,,,,,,..,
CT — Junction Capacitance (pF)
4 8 12 16
VKA - Reverse Voltage (V
Normalized Thermal Transient Impedance, Junction-to-Ambient
10-1 1
Square Wave Pulse Duration (sec)
Notes:
1. Duty Cycle, D = -
2. Per Unit Base = Rth0A = 91 "C/W
3. TJM - TA = PDMZIhJAm
4. Surface Mounted
10 100 600
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (sec)
IO-I 1
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DocumentNumber: 71429
S-03709-Reih A, 14-May-01
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