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SI7456DP
N-Channel 100-V (D-S) MOSFET
VISHAY
Si7456DP
New Product
Vishay Siliconix
N-Channel 1oo-v (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (Q) ID (A)
100 0.025@VGs= 10V 9.3
0.028 © VGS = 6.0 v 8.8
PowerPAK"' SO-8
Bottom IAew
FEATURES
q TrenchFET© Power MOSFETS
q New Low Thermal Resistance PowerPAlC"
Package with Low 1.07-mm Prohle
q PWM Optimized for Fast Switching
APPLICATIONS
q Primary Side Switch for High Density DC/DC
o Telecom/Server 48-V, Full-/Half-Bridge DC/DC
q Industrial and 42-V Automotive
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 100
Gate-Source Voltage VGS i 20
TA = 25°C 9.3 5.7
Continuous Drain Current (To = 150°C)a ID
TA = 85°C 6.7 4.1
Pulsed Drain Current IBM 40
Avalanche Current IAs 30
. L = 0.1 mH
Single Avalanche Energy (Duty Cycle 2 1%) EAS 45 mJ
Continuous Source Current (Diode Conduction)a ls 4.3 1.6 A
TA = 25°C 5.2 1.9
Maximum Power Dissipation" PD W
TA = 85°C 2.7 1.0
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 19 24
Ma im m J nction-to-Ambienta R
XI u u I I Steady State WA 52 65 ''CA/V
Maximum Junction-to-Case Steady State Rch 1.5 1.8
a. Surface Mounted on 1" x l" FR4 Board.
Document Number: 71603 www.vishay.com
S-03707-Rev. B, 07-May-01
Si7456DP
VISHAY
Vishay Siliconix
New Product
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDs = Kas, ID = 250 MA 2 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = 120 V d: 100 nA
VDs=80V,VGs=0V 1
Zero Gate Voltage Drain Current IDSS WA
VDS=8OV,VGS=0V,TJ=85°C 20
On-State Drain Currenta |D(on) Vos 2 5 V, VGs = 10 V 40 A
N/ss = 10 V, ID = 9.3A 0.021 0.025
Drain-Source On-State Resistancea rDs(on) Q
VGS=6.OV, ID= 8.8A 0.023 0.028
Forward Transconductancea 9ts I/os = 15 V, ID = 9.3 A 35 S
Diode Forward Voltage" I/sro Is = 4.3 A, Veg = 0 V 0.8 1.2
Dynamicb
Total Gate Charge % 36 44
Gate-Source Charge Qgs VDs = 50 V, VGS = 10 V, ID = 9.3 A 10 nC
Gate-Drain Charge di 8.6
Gate Resistance Rg 1.27 Q
Turn-On Delay Time thon) 20 40
Rise Time tr VDD = 50 V, RL = 50 Q 10 20
Turn-Off Delay Time thott) ID _ 1 A, VGEN = 10 V, Re = 6 Q 46 90 ns
Fall Time tf 26 50
Source-Drain Reverse Recovery Tlme trr IF = 4.3 A, dildl = 100 Alps 50 80
a. Pulsetest; pulse width 5 300 us, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
Vss=10thru6V 5V
Ct ig"
E 24 / E 24
o o / I
I' 16 e 16
I I To = 125°C
- 8 - 8 2irc
4 V -55''C
0 1 2 3 4 5 0 2 3 4 5 6
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage(V)
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Document Number: 71603
S-03707-Reih B, 07-May-01
VISHAY
Si7456DP
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
is" 0.03
I",-'; VGS = 6.0 V
c 0.02 -
C) VGS = 10 V
f 0.01
0 8 16 24 32 40
ID - Drain Current (A)
Gate Charge
10 _ _
VDS = 50 V
s. ID = 9.3 A
g //'"
'5 6 I
ii!",'' 4 /
0 6 12 18 24 30 36
09 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V30 - Source-to-Drain Voltage (V)
Capacitance
C — Capacitance (pF)
O 10 20 30 4O 50 60
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.6 l _
Vss=101/
A 2.3 - |D=9.3A
8 2.0 /
:2 a /
..e S /
“’5 1.7
ttt E "
I" 1.4
if 1.1 //
ol, //
0.5 "-"'
-50 -25 O 25 50 75 100 125 150
TJ - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
2; 0.06 10:9,3A
a; 0.04
.3 0.02
o 2 4 6 8 10
V68 - Gate-to-Source Voltage (V)
Document Number: 71603
S-03707-Rev. B, OT-May-OI
www.vishay.com
Si7456DP
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.5 50
0.0 ID = 250 HA
8 "ss, g 30
L, _ tc "
g 0 5 g N
'l)..] o. 20
Jr "s, N
-1.0 k 'N
N 10 _
-1.5 0
-50 -25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600
To - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1. Duty Cycle, D = T1
2. Per Unit Base = RNA = 52°CIW
3. TJM - TA = PDMZthAm
4. Surface Mounted
10 100 600
li' Duty Cycle = 0.5
I' 8 0.2
42 I o 1 T
J.l g .
8 a 0.1
Single Pulse
10-4 10-3 10-2 10-1 1
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
5 Duty Cycle = 0.5
TD 0.2
..,b'. a
8 , 0.1
8 F, 0.1
Single Pulse
0.0001 0.001 0.01
Square Wave Pulse Duration (sec)
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Document Number: 71603
S-03707-Reih B, 07-May-01
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