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SI7450DP
N-Channel 200-V (D-S) MOSFET
VISHAY
Si7450DP
New Product
N-Channel 200-V (D-S) MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (C2) ID (A)
200 0.080 @ VGS = 10 v 5.3
0.090 @ VGS = 6 v 5.0
PowerPAK'" SO-8
Bottom Nfew
FEATURES
q TrenchFETD Power MOSFETS
Vishay Siliconix
q New Low Thermal Resistance PowerPAK'"
Package with Low 1.07-mm Profile
q PWM Optimized for Fast Switching
APPLICATIONS
q Primary Side Switch for High Density DC/DC
o Telecom/Server 48-V DC/DC
q Industrial and 42-V Automotive
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage Vos 200
Gate-Source Voltage I/ss 3: 20 V
TA = 25°C 5.3 3.2
Continuous Drain Current (TJ = 15ty'C)a TA = 70°C ID 4.3 2.6
Pulsed Drain Current IBM 40 A
Avalanche Current IAS 15
Continuous Source Current (Diode Conduction)a IS 4.3 1.6
TA = 25°C 5.2 1.9
Maximum Power Dissipation" TA = 70°C PD 3.3 1.2 W
Operating Junction and Storage Temperature Range To, Tsig -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 19 24
Maximum Junction-to-Ambienta Steady State RNA 52 65 °CNV
Maximum Junction-to-Case (Drain) Steady State Rthoc 1.5 1.8
a. Surface Mounted on l" x 1" FR4 Board.
DocumentNumber: 71432
S-03475-Rev, B, 16-Apr-01
www.vishay.com
Si7450DP VISHAY
Vishay Siliconix New Product
SPECIFICATIONS IT,, = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 11A 2.0 V
Gate-Body Leakage IGSS VDs = 0 V, VGs = i 20 V l 100 nA
VDS=160V,VGS=0V 1
Zero Gate Volta e Drain Current I
g DSS VDs=160V,Vss=0V,Tu=550C 5 ”A
On-State Drain Currenta low”) Vos 2 5 V, VGS = 10 V 40 A
I/cs = 10 V, ID = 4.0A 0.065 0.080
Drain-Source On-State Resistancea rDS(nn) Q
VGS = 6.0 V, b = 4.0A 0.070 0.090
Forward Transconductancea gfs Vros = 15 V, ID = 5 A 19 S
Diode Forward Voltagea VSD ls = 2.8 A, VGS = 0 V 0.75 1.2
Dynamicb
Total Gate Charge Q9 34 42
Gate-Source Charge Qgs VDs = 100 V, Veg = 10 V, ID = 4.0 A 7.5 I
Gate-Drain Charge di 12.0
Turn-On Delay Time td(on) 14 20
Rise Tlme tr VDD = 100 V, RL = 25 Q 20 30 ns
Turn-Off Delay Time timott) ID _ 4.0 A, VGEN = 10 V, Rs = 6 Q 32 50
Fall Time tf 25 35
Gate Resistance Rg 0.85 Q
Source-Drain Reverse Recovery Time trr IF = 2.8 A, dildt = 100 A/us 70 100 ns
a. Pulsetest; pulse width 5 300 us, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing,
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
40 l 40
f" VGS=10thru6V 35 l”
32 //I
Ct'.'. iii] // I
E 24 E 25 I f f
8 <3 20
E g f f
5 16 5 15
I I "c--1251C // f
f 5 v f IO I l
a 55001 / /
5 "pd ,
4 v / - o
0 I 0 j I 55 c l
0 2 4 6 8 10 0 1 2 3 4 5 6
VDs - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com DocumentNumber: 71432
2 S-03475-Rev. B, 16-Apr-01
VISHAY
Si7450DP
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
I 0.15
t 0.10 Yas = 6 v
IA _...."--,::::.'::...---'''''"
5, VGS = 10 V
f 0.05
0 8 16 24 32 40
ID - Drain Current(A)
Gate Charge
Vros=100V
ID = 4.0A
12 p,,,,,,,"''
0 15 30 45 60
% - Total Gate Charge (nC)
VGS — Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
| S — Source Current (A)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Capacitance
A 2000
E; Ciss
J2. 1500
I 1000
500 Crss
/ Coss
0 40 80 120 160 200
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.5 I I
VGS = 10 V
lro=4.0A o,pp''''
:2 G" w''''''
i-,', h' 1.5 /
II. E "
o g ',w''''
8 "--''"
-50 -25 O 25 50 75 100 125 150
TJ - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
a 0.20
; ID-- 4.0A
7.5 0.15
I 0.10
JP 0.05
0 2 4 6 8 10
V68 - Gate-to-Source Voltage (V)
DocumentNumber: 71432
S-03475-Reu. B, 16-Apr-01
www.vishay.com
Si7450DP VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power, Juncion-To-Ambient
1.0 100 "
0.5 's. 80
"s, b--250rA "
Power (W)
VGS(th) Variance (V)
-1.0 'ss, 20
\“~---.
-1.5 O
-50 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10
T J - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
E Duty Cycle = 0.5
S a 0.2
if',' g Notes:
i-,'?,] T
g a, 0.1 PDM
g ff I
g -ly-1 te t
a 1. Duty Cycle, D = T;
2, Per Unit Base = RthJA = 68''CAN
. 3. To, - TA = PDMZthJAm
Single Pulse 4. Surface Mounted
ltr" 10-3 10-2 Ity-l 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
li' Duty Cycle = 0.5
:12: a 0.2
8 , 0.1
'i' E 0.1
Z 0.02
I I I I
Single Pulse
10-4 10-3 10-2 IO-I 1 10
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71432
4 S-03475-Rev. B, 16-Apr-01
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