SI7448DP ,N-Channel 20-V (D-S) Fast Switching MOSFETSi7448DPNew ProductVishay SiliconixN-Channel 20-V (D-S) Fast Switching MOSFET ..
SI7448DP-T1 ,N-Channel 20-V (D-S) Fast Switching MOSFETS-31728—Rev. B, 18-Aug-031Si7448DPVishay SiliconixMOSFET SPECIFICATIONS (T = 25C UNLESS OTHERWISE ..
SI7450DP ,N-Channel 200-V (D-S) MOSFETSi7450DPNew ProductVishay SiliconixN-Channel 200-V (D-S) MOSFET TrenchFET ..
SI7454DP ,N-Channel 100-V (D-S) MOSFETSi7454DPNew ProductVishay SiliconixN-Channel 100-V (D-S) MOSFET TrenchFET Power MOSFETS ..
SI7454DP ,N-Channel 100-V (D-S) MOSFETS-03708—Rev. A, 14-May-011Si7454DPNew ProductVishay Siliconix ..
SI7454DP-T1-E3 , N-Channel 100-V (D-S) MOSFET
SLF6028T-4R7M1R6-PF , Inductors for Power Circuits Wound Ferrite SLFseries
SLF6028T-4R7M1R6-PF , Inductors for Power Circuits Wound Ferrite SLFseries
SLF6028T-680MR50-PF , Inductors for Power Circuits Wound Ferrite SLFseries
SLF6028T-680MR50-PF , Inductors for Power Circuits Wound Ferrite SLFseries
SLF7032T-3R3M1R9-2 , Inductors For Power Line SMD
SLF7032T-3R3M1R9-2 , Inductors For Power Line SMD
SI7448DP
N-Channel 20-V (D-S) Fast Switching MOSFET
VISHAY
Si7448DP
New Product
Vishay Siliconix
N-Channel 20-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (C2) ID (A)
20 0.0065 @ VGS = 4.5 v 22
0.009@VGs=2.5V 19
PowerPak"" SO-8
Bottom \Aew
FEATURES
q TrenchFETD Power MOSFET
q New Low Thermal Resistance PowerPAK'"
Package with Low 1.07-mm Profile
APPLICATIONS
o Synchronous Rectifier-Low Output Voltage
q Portable Computer Battery Selection or
Protection
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 20
Gate-Source Voltage VGS ck 12 V
TA = 25°C 22 13.4
Continuous Drain Current (TJ = 150°C)3 TA = 70°C ID 17.6 10.7
Pulsed Drain Current IBM 50 A
Continuous Source Current (Diode Conduction)a IS 4.3 1.6
TA = 25°C 5.2 1.9
Maximum Power Dissipation" TA = 70°C PD 3.3 1.2 W
Operating Junction and Storage Temperature Range To, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 19 24
Maximum Junction-to-Ambient" Steady State RNA 52 65 "CAV
Maximum Junction-to-Case (Drain) Steady State Rthoc 1.5 1.8
a. Surface Mounted on l" x 1" FR4 Board.
DocumentNumber: 71635
S-04019-Rev. A, ll-Jun-OI
www.vishay.com
Si7448DP VISHAY
Vishay Siliconix New Product
MOSFET SPECIFICATIONS ITU = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 11A 0.6 V
Gate-Body Leakage IGSS VDs = 0 V, VGs = ck 12 V l 100 nA
VDS=16V,VGS=OV 1
Zero Gate Volta e Drain Current I
g DSS VDS=16V,VGS=0V,TJ=85°C 20 ”A
On-State Drain Currenta low”) Vos 2 5 V, VGS = 4.5 v 50 A
VGS = 4.5 V, ko = 22 A 0.0054 0.0065
Drain-Source On-State Resistancea rDs(on) Q
VGS = 2.5 V, ID = 19 A 0.0075 0.009
Forward Transconductancea gfs Vos = 15 V, ID = 22 A 90 S
Diode Forward Voltagea VSD ls = 3 A, VGS = 0 V 0.8 1.2
Dynamicb
Total Gate Charge Q9 38 50
Gate-Source Charge Qgs VDS = 10 V, VGS = 4.5 V, ID = 21 A 8 I
Gate-Drain Charge di 8.5
Gate-Resistance RG 0.9 Q
Turn-On Delay Time td(on) 22 35
Rise Time t, VDD = 10 V, RL =10 Q 22 35
Turn-Off Delay Time tdmm lo _ 1 A, VGEN = 10 V, Re = 6 Q 125 190 ns
Fall Time tf 60 90
Source-Drain Reverse Recovery Time trr IF = 3 A, di/dt = 100 Alps 60 90
a. Pulsetest; pulse width 5 300 us, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
50 - l 50
VGS = 4.5 thru 2.5 v
ii:] ig".
E 30 E 30
E' 20 E' 20
I I Tc = 125°C
- 10 _ 10
1.5 V 25 C 's /
Uet,zt -55'C
0 0 Lu..- I
0 1 2 3 4 5 0.0 0.5 co 1.5 2.0 2.5
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71635
2 S-04019-Reih A, ll-Jun-OI
VISHAY
Si7448DP
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
A 0.010
g 0.008 VGS = 2.5 V
m V =4.5V
ttt 0.006 GS
E? 0.004
0 10 20 30 40 50
ID - Drain Current (A)
Gate Charge
A VDS = 10 V ",,,w'''''
ty 4 _ |D=22 A
jj., "
f,' s,,/''''
g, s,,,/''''
(1,-l 2 /
0 8 16 24 32 40
Q9 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
0.0 0.2
0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
C — Capacitance (pF)
rDS(on) — On-Resistance(Q)
(Normalized)
rDS(0n) - On-Resistance ($2
Capacitance
V95 - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6 l I
VGS = 10 V o,,pss''''''
I =22 A
1.4 - D s,,,,,,-'''''"
1.2 w,,,,,,,,,,""'''''''''
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
ID = 22 A
0 1 2 3 4 5
VGS - Gate-to-Source Voltage (V)
Document Number: 71635
S-04019-Rev. A, ll-Jun-OI
www.vishay.com
Si7448DP VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage Single Pulse Power, Juncion-To-Ambient
0.6 l l 100 "
0.4 ID = 250 “A (
0.2 'ss. "
g -0.0 E so
g -0 2 E N
il" -0.4 "s, 40 l
> "s, 'Is,
-0 8 "s,
\“~---.
-1.0 o
-50 -25 o 25 50 75 100 125 150 0.001 0.01 0.1 1 10
TJ - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
li' Duty Cycle = 0.5
S a 0.2
if',' E Notes:
g F, 0.1 PDM
g ff I
g -ly-1 te t
a 1. Duty Cycle, D = T;
2, Per Unit Base = RthJA = 68''CAN
. 3. To, - TA = PDMZthJAm
Single Pulse 4. Surface Mounted
ltr" 10-3 10-2 Ity-l 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
.03 Duty Cycle = 0.5
:12: a 0.2
8 , 0.1
'i' E 0.1
Z 0.02
I I I I
Single Pulse
10-4 10-3 10-2 IO-I 1 10
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71635
4 S-04019-Reih A, ll-Jun-OI
:
www.loq.com
.
