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SI7446DP
N-Channel Reduced Qg, Fast Switching MOSFET
VISHAY
Si7446DP
New Product
Vishay Siliconix
N-Channel 30-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (C2) ID (A)
30 (h0075@N/Gs=10V 19
0.010@VGS=4.5V 17
PowerPak TM SO-8
Bottom View
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 30
Gate-Source Voltage Kas l 20
TA = 25°C 19 12
Continuous Drain Current(TJ = 150oC)a ID
TA = 70''C 15 9
Pulsed Drain Current IDM 50
Continuous Source Current (Diode Conduction)" ls 4.3 1.6
TA = 25°C 5.2 1.9
Maximum Power Dissipation" PD W
TA = 70''C 3.3 1.2
Operating Junction and Storage Temperature Range Ts Tsig -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 19 24
Maximum Junction-to-Ambient" RthJA
Steady State 52 65 "CA/V
Maximum Junction-to-Case (Drain) Steady State Rch 1.5 1.8
a. Surface Mounted on 1"x1"FR4 Board.
Document Number: 71335
S-02560-Reu A, 20-Nov-00
www.vishay.com
. C=7'"
Si7446DP VISHAY
Vishay Siliconix New Product
MOSFET SPECIFICATIONS tTa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGsnh) VDS = VGS, ID = 250 LA 1.0 V
Gate-Body Leakage less VDs = 0 V, VGS = 1:20 V ch 100 nA
VDS=24V,VGS=OV 1
Zero Gate Volta e Drain Current I
g DSS VDs=24V,Vss=0V,Tu=55c'C 5 ”A
On-State Drain Current3 low“) I/os 2_' 5 V, VGS = 10 V 40 A
VGS = 10 V, lry = 19 A 0.0062 0.0075
Drain-Source On-State Resistancea rDs(on) Q
VGS=4-5 V, ID: 17A 0.0083 0.010
Forward Transconductancea gfs VDS = 15 V, ID = 19 A 60 S
Diode Forward Voltagea VSD ls = 4.3 A, VGS = O V 0.75 1.2
Dynamicb
Total Gate Charge Q9 36 45
Gate-Source Charge Qgs VDS = 15 V, VGS = 5.0 V, ID = 19 A 14 nC
Gate-Drain Charge di 12
Gate-Resistance Re 2.4 Q
Turn-On Delay Time tdmn) 20 30
Rise Tlme tr VDD=15V,RL=15Q 16 25
Turn-Off Delay Time td(ott) In - 1 A, VGEN = 10 V Rs = 6 Q 120 180 ns
Fall Tlme tf 43 65
Source-Drain Reverse Recovery Time trr IF = 2.3 A, di/dt = 100 A/us 50 80
a. Pulsetest; pulse width s 300 us, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
v65: 10thru4V
Ct". g".
E 30 E 30
E 20 5 20
I I To = 125°C, /
_ 10 3 V _ 10
l 25°C\[ /
r 2 v' -55''C
0 I O l
O 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Vos - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com DocumentNumber: 71335
2 S-02560-Reu A, 20-Nov-00
VISHAY
Si7446DP
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
FDS(on) — On—Resistance ( g2)
— Gate—to-Source Voltage (V)
ls — Source Current(A)
On-Resistance vs. Drain Current
VGS = 4.5 V
VGS = 10 V
0 IO 20 30 40 50
ID - Drain Current (A)
Gate Charge
VDS = 15 v /'"
8 - ID = 19 A 1
0 14 28 42 56 70
% - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
To-- 150°C
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V50 - Source-to-Drain Voltage (V)
C — Capacitance (pF)
roswn) — On-Resistance (9)
(Normalized)
rDS
Capacitance
5000 '
Ns, Coss
0 5 10 15 20 25 30
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6 - VGS = 10 V
Iro=19 A ,i”’
1.2 / -,,,-'"'
0.8 4/
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
ID=19A
2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
Document Number: 71335
S-02560-Reu. A, 20-Nov-00
www.vishaycom
Si7446DP
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
VGS(th) Variance (V)
Threshold Voltage Single Pulse Power, Juncion-To-Ambient
0.6 I l 100 )
(h4 "s, ID = 250 ”A (
0.2 \ )
Ah0 g 60
A) 2 ttc 3 \
's, a 1
Ah4 "ss, 40
-0.6 N. Iss,
Ah8 \ 'ss,
N, \“~-...
-1.0 0
-50 -25 0 25 50 75 100 125 150 th001 0.01 0.1 1 10
T: - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
E: Duty Cycle = 0.5
ifj g Notes:
[t E 0.1 T
8 E 0.1 't"
% [E 0.05
t, -ly-1 ta 11
a 0.02 1. Duty Cycle, D = T,
2. Per Unit Base = Rth0A = 68°CNV
. 3. TJM - TA = PDMZthA“)
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 IO-l 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
E, Duty Cycle = 0.5
ul:'. 3 0.2
8 g 0.1
a 0.02
l l I 1
Single Pulse
10-4 1o-3 1o-2 10-1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71335
S-02560-Reu A, 20-Nov-00
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