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SI7440DP
N-Channel 30-V (D-S) Fast Switching MOSFET
VISHAY
New Product
Si7440DP
Vishay Siliconix
N-Channel 30-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
VDs (V) rDS(on) (C2) ID (A)
30 0.0065 @ VGS =10 v 21
0.008@VGs=4.5V 19
PowerPAK"" SO-8
Bottom Mew
FEATURES
q TrenchFETD Power MOSFET
q New Low Thermal Resistance PowerPAK'"
Package with Low 1.07-mm Profile
APPLICATIONS
o DC/DC Converters
q Optimized for "Low-Side" Synchronous
Rectifier Operation
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 30
Gate-Source Voltage VGS ck 20 V
TA = 25°C 21 12
Continuous Drain Current (TJ = 150°C)3 TA = 70°C ID 17 9
Pulsed Drain Current IBM 60 A
Continuous Source Current (Diode Conduction)a IS 4.3 1.6
TA = 25°C 5.4 1.9
Maximum Power Dissipation" TA = 70°C PD 3.4 1.2 W
Operating Junction and Storage Temperature Range To, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 18 23
Maximum Junction-to-Ambient" Steady State RNA 52 65 "CAV
Maximum Junction-to-Case (Drain) Steady State Rthoc 1.0 1.3
a. Surface Mounted on l" x 1" FR4 Board.
Document Number: 71623
S-03842-Rev, A, 28-May-01
www.vishay.com
Si7440DP
VISHAY
Vishay Siliconix New Product
MOSFET SPECIFICATIONS ITU = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 0A 1.0 V
Gate-Body Leakage less VDs = 0 V, VGS = i 20 V l 100 nA
VDS=24V,VGS=OV 1
Zero Gate Volta e Drain Current I
g DSS VDs=24V,Vss=0V,Tu=551 5 ”A
On-State Drain Currenta low”) Vos 2 5 V, VGS = 10 V 40 A
VGS =10 V, ID = 21A 0.0053 0.0065
Drain-Source On-State Resistancea rDs(on) Q
VGS = 4.5 V, ID = 19 A 0.0065 0.008
Forward Transconductancea gfs Vos = 15 V, ID = 21 A 65 S
Diode Forward Voltagea VSD ls = 4.3 A, VGS = 0 V 0.72 1.2
Dynamicb
Total Gate Charge Qg 29.0 35
Gate-Source Charge Qgs VDS = 15 V, VGS = 4.5 V, ID = 21 A 10.5 nC
Gate-Drain Charge di 10.0
Gate-Resistance RG 1.4 Q
Turn-On Delay Time td(on) 18 28
Rise Time t, VDD =15 V, RL =15 Q 16 25
Turn-Off Delay Time tdmm '0 E 1 A, VGEN = 10 V, Rs = 6 Q 75 180 ns
Fall Time tf 41 65
Source-Drain Reverse Recovery Time trr IF = 4.3 A, di/dt = 100 Alps 50 80
a. Pulsetest; pulse width 5 300 us, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
VGS=10thru4V
ii:] 40
0 2 4 6 a
VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
ig". 40
I Tc = 125°C / I
0 L? F55 C
0.0 0.5 co 1.5 2.0 2.5 3.0 3.5
VGS - Gate-to-Source Voltage (V)
www.vishay.com
Document Number: 71623
S-03842-Reu. A, 28-May-01
VISHAY
Si7440DP
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
A 0.008
E VGs = 4.5V A
E 0 006 I 8
f-,' . VGS = 10 V - F,
I 0.004 L:
fic,' o
L 0.002
0 10 20 30 40 50 60
ID - Drain Current (A)
6 Gate Charge
A VDS = 15 v ",,,/'''
ty 5 - |D=21 A / A
:2 w,,''''' q,
f,' 4 g g
" w L1
T 3 f , g
S,'. / o 2
Q12, I V
o 2 l I?
0 8 16 24 32 40
Q9 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
E T J = 150°C g
a 10 ii
ISIS' 5
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Capacitance
Is.., Ciss
"ss Coss
0 4 8 12 16 20
V95 - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
VGS = 10 V
- ID: 21 A /’
w,,,,,,-'''''''"
',,,,,,,e"
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
ID=21A
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
Document Number: 71623
S-03842-Reu. A, 28-May-01
www.vishay.com
Si7440DP
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage
Single Pulse Power, Juncion-To-Ambient
0.4 "s, l l 200
0.2 "cs, ID = 250 11A N
E -0.0
g -0.2 _ if 120
ir,' "N, g
g." -0.4 '; Cl.
il" "N, 80
> _ \ l
'ss. 40 'N
N 'ss.
-1.0 o
-50 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10
TJ - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
E Duty Cycle = 0.5
S a 0.2
if',' E Notes:
i-,'?,] T
g a, 0.1 PDM
LY ff I
g -ly-1 te t
a 1. Duty Cycle, D = T;
2, Per Unit Base = RthJA = 68''CAN
. 3. To, - TA = PDMZthJAm
Single Pulse 4. Surface Mounted
ltr" 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
li' Duty Cycle = 0.5
I' 8 o 2
8 g 0.1
'i' E 0.1
Single Pulse
10-4 10-3 10-2 IO-I 1 10
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71623
S-03842-Reu. A, 28-May-01
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