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SI7405DN
P-Channel 12-V (D-S) MOSFET
VISHAY
Si7405DN
P-Channel 12-V (D-S) MOSFET
New Product
PRODUCT SUMMARY
VDS (V) rDS(on) (Q) ID (A)
0.016 @ VGS = -4.5 v -13
-12 0.022 @ VGS = -2.5 v -11
0.028 @ VGS = -1.8 v -9.8
PowerPAK TM 1212-8
Bottom Ihew
FEATURES
0 TrenchFETo Power MOSFETS: 1.8-V Rated
q New PowerPAlC" Package
- Low Thermal Resistance, Rthuc
- Low 1.07-mm Profile
APPLICATIONS
q Load Switch
q PowerSwitch
q PA Switch
P-Channel MOSFET
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS -12
Gate-Source Voltage VGs i8
TA = 25°C -1 3 -83
Continuous Drain Current (To = 150°C)3 ID
TA = 85°C -9.4 Ai.0 A
Pulsed Drain Current IBM -30
continuous Source Current (Diode Conduction)a ls -3.2 -12
TA = 25°C 3.8 1.5
Maximum Power Dissipation" Pro W
TA = 85°C 2.0 0.8
Operating Junction and Storage Temperature Range To, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 26 33
Maximum Junction-to-Ambienta R
Steady State WA 65 81 “CM
Maximum Junction-to-Case Steady State Rch 1.9 2.4
a. Surface Mounted on 1" x l" FR4 Board.
Document Number: 71424 www.vishay.com
S-03310-Rev. A, 26-Mar-01
Si7405DN
VISHAY
Vishay Siliconix
New Product
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage Vegan) VDS = VGs, ID = -2 mA Mh45 V
Gate-Body Leakage less Vos = 0 V, VGS = l 8 V cl: 100 nA
VDS = -9.6 V, VGS = O V -1
Zero Gate Voltage Drain Current loss “A
Vos = -9.6 V, VGs = O V, TJ = 85°C -5
On-State Drain Currenta ID(on) Vos s -5 V, VGS = -A.5 V -30 A
VGs=-4.5V, Ics---' 0.013 0.016
Drain-Source On-State Resistancea rDs(on) VGs = -2.5 V, lo = -11 A 0.018 0.022 Q
VGS = -1.8 v, ID = -3A 0.022 0.028
Forward Transconductancea gfs VDs = -6 V, ID = -13 A 35
Diode Forward Voltagea VSD ls = -3I? A, VGS = 0 V -0.7 -1.2 V
Dynamicb
Total Gate Charge % 35 50
Gate-Source Charge Qgs VDs = -6 V, VGS = -A.5 V, ID = -13 A 6.6 nC
Gate-Drain Charge di 7.7
Turn-On Delay Time tam) 25 40
Rise Time tr VDD = -6 V. RL = 6 Q 50 75
Turn-Off Delay Time tam“, ID _ -1 A, VGEN = -4.5 V, Re = 6 C2 175 260 ns
Fall Time tr 150 225
Source-Drain Reverse Recovery Tlme trr IF = -3.2 A, di/dt = 100 Alps 30 60
a. Pulsetest; pulse width S 300 us, duty cycle S 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
30 l l 30
// VGS = 5 thru 2 V ///
25 // 25 /
ii.:.". 20 ig" 20
g 1.5 v g
8 15 , 8 15
'i 10 D. 10
Cl / 0 Tc , 125°C
5 5 25°C / l
l 1 v 'ss, -55''C
O 1 2 3 0.0 0.4 0.8 1.2 1.6 2.0
Vos - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71424
S-03310-Rev, A, 26-Mar-01
VISHAY
Si7405DN
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
0.05 ,
a 0.04 I
jf "s/Gs-l.'..:...,,,..,.,,----'''"
t o....---''''""'' ves = 2.5 v
I 0.02
f 0.01 VGS = 15 V A
0 5 10 15 20 25 30
ID - Drain Current(A)
5 Gate Charge
A VDS = 6 V
o 4 7 ID 13 A
g' 2 /
0 8 16 24 32 40
Q9 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
A To = 150°C
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V30 - Source-to-Drain Voltage (V)
(Normalized) C — Capacntance (pF)
rosmn) — On-Resistance(§2)
rDS(0n) — On—Resistance (Q)
Capacitance
5000 k
Ns.. Ciss
4000 "ss....,...,
2000 NIS.
's oss
'c:::::::-, C
1000 - C -
0 2 4 6 8 10 12
VDS - Drain-to-Source Voltage (V)
1 4 On-Resistance vs. Junction Temperature
Vss=4.5V /'''
1.3- Iro=13 A /'""
0.9 //
-50 -25 O 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
( ID = 13A
(h02 lc
0 1 2 3 4 5
VGS - Gate-to-Source Voltage (V)
Document Number: 71424
S-0331(r-Rev. A, 26-Mar-01
www.vishay.com
Si7405DN
VISHAY
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage
Single Pulse Power, Juncion-To-Ambient
0.4 l l 50 l
ID = 2 mA
0.3 s,,,,,,-'''''''' 40
3 0.2 /
g ',w'''" E 30
.5 s,,,,,,,.'''''' i! I
E" ',,,w'" c? l
'lii- 20 It,
> 0.0 \
-0 1 4 10 " 's,
""" 'ss..
-50 -25 0 25 50 75 100 125 150 th01 0.1 1 10 100 600
T J - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
li' Duty Cycle = 0.5
g E 0.2
lit E 0.1 T
u g 0.1 PDM
'l': g l
T, _ 0.05
g -21 t2 tt
a 0.02 1. Duty Cycle, D = T
2. Per Unit Base = RNA = 65°CIW
. 3. TJM - TA = PDMZthAm
Single Pulse 4. Surface Mounted
Ity-A 10-3 10-2 Ity-l 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
li' Duty Cycle = 0.5
3% 0.2
é , 0.1
"jiif 0.1 Single Pulse
f, 0.05
z 0.02
1o-4 1o-3 IO-I 1
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71424
S-03310-Rev, A, 26-Mar-01
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