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SI6975DQ
Dual P-Channel 12-V (D-S) MOSFET
VISHAY
New Product
Si6975DQ
Vishay Siliconix
Dual P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (Q) ID (A)
0.027@VGs=-4.5V -5.1
-12 0.035 @ l/GS = -2.5 v -4.5
0.046 @ Vss = -1.8 v -3.9
TSSOP-8
D1 I: o El D2
s, IE Si6975DQ El S2
S, IE El S2
G1 [2 Csl G2
Top Mew
P-Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS -12
Gate-Source Voltage VGS i 8
TA = 25°C -5.1 -43
Continuous Drain Current (To = 150°c)a ID
TA = 70°C -4.1 -3.5
Pulsed Drain Current (10 us Pulse \Mdth) IBM -30
Continuous Source Current (Diode Conduction)" Is -1.0 Ah7
TA=25°C 1.14 0.83
Maximum Power Dissipation" PD W
TA = 70°C 0.73 0.53
Operating Junction and Storage Temperature Range T J, Tstg -55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 86 110
Maximum Junction-to-Ambienta R
Steady State WA 124 150 ”CM
Maximum Junction-to-Foot (Drain) Steady State RthJF 52 65
a. Surface Mounted on 1" x l" FR4 Board.
Document Number: 71319 www.vishay.com
S-02318-Rev. A, 23-Oct-00
Si6975DQ
VISHAY
Vishay Siliconix
New Product
SPECIFICATIONS ITU = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage Vegan) VDs = VGS, ID = -5 mA -0.45 V
Gate-Body Leakage less VDS = 0 V, VGS = is V i 100 nA
Vros = -9.6 V, VGS = 0 V -1
Zero Gate Voltage Drain Current IDSS WA
Vos = -9.6 V, VGS = 0 V, To = 70°C -25
On-State Drain Currenta low”) VDS = -5 V, VGS = -A.5 V -20 A
VGS = -4.5 V, ID = -5.1 A 0.022 0.027
Drain-Source On-State Resistancea rDs(on) VGS = -2.5 V, ID = -4.5 A 0028 0.035
VGS = -1.8 V, ID = -3.9 A 0.037 0.046 Q
Forward Transconductancea gfs VDs = -5 V, ID = -5.1 A 20
Diode Forward Voltagea I/so ls = -1.0 A, VGS = 0 V -0.65 -1 .1
Dynamicb
Total Gate Charge Q9 23 30
Gate-Source Charge Qgs Vros = -6 V, VGS = -4.5 V, ID = -5.1 A 3.0 nC
Gate-Drain Charge di 4.3
Turn-On Delay Time thon) 25 40
Rise Time tr VDD = -6 V, RL = 6 Q 32 50
Turn-Off Delay Time tum, ID _ -1 A, VGEN = 4.5 V, Re = 6 C2 96 140 ns
Fall Time tr 62 95
Source-Drain Reverse Recovery Time trr IF = -1.0 A, di/dt = 100 Alps 60 100
a. Pulsetest; pulse width s 300 us, duty cycle s 2%.
b. Guaranteed by design, not subject to production testing,
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Output Characteristics Transfer Characteristics
30 _ _ 30
V = 5 thru 2.5 V l /
GS 2 v TC = -55''C /
24 _ 1 24 I
g.] A 25°C /
"iz,' SE / ,
'g 18 E 18
I', (t 125°C
12 1.5 V L 12
6 I - 6
os, 1 v a/f
O 2 4 6 8 10 0.0 0.5 1.0 1.5 2.0 2.5
VDs - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
www.vishay.com Document Number: 71319
S-02318-Rev, A, 23-Oct-00
VISHAY
Si6975DQ
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
0 5 10 15 20 25 30
ID - Drain Current (A)
Gate Charge
VDS = 6 v
s. ID = 5.1 A
8 -/''
o 5 IO 15 20 25
09 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
Ci.] To = 150''C
0.0 0.3 0.6 0.9 1.2 1.5
V30 - Source-to-Drain Voltage (V)
C — Capacitance (pF)
rDs(0n) — On-Resistance (Q)
I’Dsmn) - On-Resistance (9)
(Normalized)
Capacitance
3200 N, Ciss
"i"-----....,.,
N, Coss
"s.......,
0 2 4 6 8 10 12
Vos - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.60 l
VGS = 4.5 V
ID=51A
1.40 i”,,
1.20 ",,-''''"
0 80 "
-50 -25 O 25 50 75 100 125 150
TJ - Junction Temperature CC)
On-Resistance vs. Gate-to-Source Voltage
0.06 -
ID = 5.1 A
0.04 (
0 2 4 6 8
VGS - Gate-to-Source Voltage (V)
Document Number: 71319
S-02318-Rev. A, 23-Oct-00
www.vishay.com
Si6975DQ
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
0.6 100
0.4 ,,,,,W"" 80 )
i) ID = 250 WA w,.,,-'''' Ir
g 0.2 -,,,e"'' g 60 ,
g " b' N
'l)..] 0.0 fi] 40
> "'''"' "ss.
-0.2 20 ,
-0.4 0
-50 -25 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10
To - Temperature (°C) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
li' Duty Cycle = 0.5
g 8 0.2
lit ' 0.1 T
g a 0.1 PDM
(i,' fE 0.05 l
g -21 r t
a 0.02 1. Duty Cycle, D = T1
2. Per Unit Base = RthJA = 124°CNV
. 3. TJM - TA = PDMZthAm
Single Pulse 4. Surface Mounted
Ity-A 10-3 10-2 Ity-l 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
5 Duty Cycle = 0.5
I' a 0.2
if',' g
tt , 0.1
8 a, 0.1
a _ 0.05
Single Pulse
1o-4 1o-3 10-2 10-1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com Document Number: 71319
S-02318-Rev, A, 23-Oct-00
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