SI6968ADQ ,Dual N-Channel2.5-V (D-S) Battery Switch FaxBack 408-970-5600S-99586—Rev. A, 20-Dec-992-1Si6968ADQNew ProductVishay Siliconix
SI6968ADQ
Dual N-Channel2.5-V (D-S) Battery Switch
VISHAY
Si6968ADQ
New Product
Vishay Siliconix
N-Channel 2.5-V (G-S) Battery Switch
PRODUCT SUMMARY
VDS (V) rDS(on) (C2) ID (A)
20 0.022 @ VGS = 4.5 v i6.2
O.O30@VGS = 2.5V i5.3
TSSOP-8
D II . E] D
S, II Si6968ADQ :1 S2 (31 OJ
SI I: 3] S2
G1 IE El G2
Top View
N-Channel MOSFET
nnel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage V03 20 V
Gate-Source Voltage l/ss 3: 12
TA=25°C ce6.2 $5.1
Continuous Drain Current (TJ = 1500C)a ID
TA-- 70°C 15.3 21:34 A
Pulsed Drain Current (10 us Pulse VWdth) IDM i 30
Continuous Source Current (Diode Conduction)" Is 1.5 1.0
TA = 25°C 1.5 1.0
Maximum Power Dissipationa PD W
TA = 70°C 0.96 0.64
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 I
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
t s 10 sec 72 83
Maximum Junction-to-Ambient" Rm J A
Steady State 100 120 °CNV
Maximum Junction-to-Foot Steady State RthJF 55 70
a. Surface Mounted on 1" x 1" FR4 Board.
Document Number: 71111
S-99586-Rev. A, 20-Dec-99
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Si6968ADQ
VISHAY
Vishay Siliconix
New Product
SPECIFICATIONS ITa = 25°C UNLESS OTHERWISE NOTED)
Parameter Symbol Test Condition Min Typ Max Unit
Static
Gate Threshold Voltage Vegan) VDS = VGS, ID = 250 11A 0.6 V
Gate-Body Leakage less VDS = 0 V, VGS = l 12 V i 100 nA
VDs=16V,VGs=0V 1
Zero Gate Voltage Drain Current loss WA
Vros=16V,Vss--0V,Tu=85oC 15
On-State Drain Current3 low") VDS a 5 V, VGS = 4.5 V 30 A
VGS = 4.5 V,ID = 6.2 A 0.014 0.018 0.022
Drain-Source On-State Resistances rDS(on) Q
VGS = 2.5 V, ID = 5.3 A 0.018 0.024 0.030
Forward Transconductancea gfs Vos = 10 V, ID = 6.2 A 25 S
Diode Forward Voltagea VSD ls = 6.2 A, VGS = O V 0.89 1.2
Dynamic"
Total Gate Charge O9 13.5 20
Gate-Source Charge Qgs Vos = 10 V, VGS = 4.5 V, ID = 6.2 A 2 nC
Gate-Drain Charge ' 3.7
Turn-On Delay Time td(on) 18 3O
Rise Tlme tr VDD = 10 V, RL = 10 Q 25 50
Turn-Ott Delay Time tims) '0 E 1 A, VGEN = 4.5 V, RG = 6 Q 50 100 ns
Fall Time tf 25 50
Source-Drain Reverse Recovery Time trr IF = 6.2 A, di/dt = 100 A/gs 40 70
a. Pulse test; pulse width s 300 us, duty cycle 5 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25 o tt UNLESS NOTED)
Output Characteristics Transfer Characteristics
/ VGS = 5 mm 2.5 V y
Ci.:.". Ci.:]
E 18 E 18
g 2 v E
Es 12 , E 12
I I - o
D 0 Ti - 125 C
- 6 - 6 I A
1.5 V 25°C
I \l/ -55''C
0 0 ut,
O 2 4 6 8 10 0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
www.vishay.com . FaxBack 408-970-5600
Document Number: 71111
S-99586-Rev. A, 20-Dec-99
VISHAY
Si6968ADQ
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
On-Resistance vs. Drain Current
5 0.05
:2 0.04
ttt ",,,W'''
8 0.03 VGS = 2.5 v -
A v = 4.5 v
_g 0.02 GS
o 6 12 18 24 30
ID - Drain Current (A)
Gate Charge
v03 =10 v
E ID = 6.2 A ,,,/''
8, 4 I
o 3 6 9 12 15
Q9 - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
To-- 150°C
| s — Source Current (A)
0 0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
C — Capacitance (pF)
rDS(0n) — On-Resistance (Q)
rDS(0n) - On-Resistance (9)
(Normalized)
Capacitance
Iss,,........, Ciss
"ss....,,.. Coss
0 4 8 12 16 20
Vros - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
VGS = 4.5 V
ID = 6.2 A /
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
ID = 6.2A
'SSS,,..
0 1 2 3 4 5
l/ss - Gate-to-Source Voltage (V)
Document Number: 71111
S-99586-Rev. A, 20-Dec-99
www.vishay.com . FaxBack 408-970-5600
Si6968ADQ
VISHAY
Vishay Siliconix New Product
TYPICAL CHARACTERISTICS (25°C UNLESS NOTED)
VGS(th) Variance (V)
Threshold Voltage Single Pulse Power, Junction-to-Ambient
0.4 30
(h2 "s, 25
"ss, ID = 250 “A
Power (W)
'ss, 10 , l
-50 -25 0 25 50 75 100 125 150 10-2 IO-l 1 10 100
TJ - Temperature CC) Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
513 Duty Cycle = 0.5
3% 0.2
if',' g Notes:
El ' 0.1 T
8 a 0.1 PDM
(-i,' (E 0.05 l
ly, -ly-1 t2 1
a 0.02 1. Duty Cycle, D = T,
2, Per Unit Base = Rth0A = 100°CNV
. 3. TJM - TA = PDMZmJAm
Single Pulse 4. Surface Mounted
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
E, Duty Cycle = 0.5
I' a 0.2
8 lg 0.1
Single Pulse
IO-A 10-3 1o-2 10-1 1 10
Square Wave Pulse Duration (sec)
www.vishay.com . FaxBack 408-970-5600 Document Number: 71111
S-99586-Rev. A, 20-Dec-99
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